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Effects of two strategies on afterglow behavior of Lu_(2)O_(3):Eu single crystal scintillator:Co-doping with Pr^(3+)and solid solution with Sc_(2)O_(3) 被引量:1
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作者 Zhongjun Xue Dongzhou Ding +4 位作者 Yating Sima Zuyao Zhou Hanrui Dong Shuwen Zhao He Feng 《Journal of Rare Earths》 SCIE EI CAS CSCD 2023年第5期658-665,I0001,共9页
In this paper,effect of two strategies on afterglow behavior of Lu_(2)O_(3):Eu single crystal scintillato r,Pr^(3+)codoping and solid solution with Sc_(2)O_(3),were studied systematically.Two groups of Lu_(2)O_(3):5 a... In this paper,effect of two strategies on afterglow behavior of Lu_(2)O_(3):Eu single crystal scintillato r,Pr^(3+)codoping and solid solution with Sc_(2)O_(3),were studied systematically.Two groups of Lu_(2)O_(3):5 at%Eu,x at%Pr(x=0,0.2,0.5,1,2 and 5)and(Lu1-yScy)_(2)O_(3):5 at%Eu(y=0,20 at%,50 at%and 70 at%)single crystals were grown by floating zone(FZ)method in air atmosphere.The structures of as-grown crystals were determined by X-ray diffraction(XRD).The scintillation,photoluminescence properties and carrier trap states were investigated through afterglow,X-ray excitation luminescence(XEL),transmittance,photoluminescence excitation(PLE)and photoluminescence(PL),PL decay and thermal stimulated luminescence(TSL)curves.It is found that with the increase of Pr^(3+)concentration,the afterglow level of the system decreases at the expense of scintillation luminescence efficiency.Meanwhile,although Sc_(2)O_(3):Eu presents much lower afterglow intensity than Lu_(2)O_(3):Eu,the addition of Sc_(2)O_(3)will just increase the afterglow level of the(Lu1-yScy)_(2)O_(3):5 at%Eu single crystal system.Possible mechanisms for above phenomena are discussed based on experimental results. 展开更多
关键词 Lu_(2)O_(3):Eu Afterglow behavior pr3+co-doping (Lu1-yScy)_(2)O_(3)solid solution Rare earths
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Ce、Pr共掺LSO多晶薄膜的溶胶–凝胶法制备及其发光性能 被引量:3
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作者 张晓欣 谢建军 +3 位作者 范灵聪 林德宝 陈旭 施鹰 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2016年第6期647-651,共5页
采用溶胶–凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce^(3+)、Pr^(3+)共掺杂的硅酸镥(Lu_2SiO_5)薄膜,采用X射线衍射(XRD)、扫描电镜(SEM)和荧光光谱(PL)对(Ce,Pr):Lu_2SiO_5薄膜的物相、表面形貌及发光性质进行了研究和表征。结果表明... 采用溶胶–凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce^(3+)、Pr^(3+)共掺杂的硅酸镥(Lu_2SiO_5)薄膜,采用X射线衍射(XRD)、扫描电镜(SEM)和荧光光谱(PL)对(Ce,Pr):Lu_2SiO_5薄膜的物相、表面形貌及发光性质进行了研究和表征。结果表明:薄膜样品在1000℃下形成了A-Lu_2SiO_5纯相;在1100℃下形成了B-Lu_2SiO_5纯相。经1100℃煅烧后,通过SEM可以观察到薄膜表面均匀、平整、无裂纹,晶粒大小为200~300 nm,旋涂10层的薄膜厚度约为320 nm。从PL谱中可以发现:在共掺杂体系里,Pr^(3+)在跃迁过程中,有一部分能量传递给Ce^(3+)离子,使Ce^(3+)产生特征能级跃迁,并且使Ce^(3+)发射强度比单掺杂Ce^(3+)时的发射强度更强。 展开更多
关键词 溶胶–凝胶法 LSO薄膜 发光 旋涂法 Ce3+ pr3+共掺杂
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