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氮化物添加对钛酸钡半导瓷电阻—温度曲线之影响 被引量:1
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作者 孙清池 王志会 王裕斌 《硅酸盐通报》 CAS CSCD 北大核心 1994年第5期24-27,共4页
本文研究了氮化物添加对钛酸钡半导瓷电阻-温度曲线之影响.实验表明,除BN外TiN、Si_3N_4、AlN也可以给出较平坦的电阻极大值.在适当的工艺条件下没有氮化物添加同样可以得到类似结果.
关键词 正温度系数电阻 氮化物添加 半导体陶瓷 钛酸钡
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Application of a polymer nanocomposite with carbon filler to limit overvoltages in a photovoltaic element
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作者 A.V.Ivanchenko A.S.Tonkoshkur 《Journal of Advanced Dielectrics》 CAS 2020年第5期25-31,共7页
The ability of a structure in the form of a photovoltaic element with a built-in posistor layer based on a polymer nanocomposite with carbon filler being in direct thermal contact to protect against overvoltages was s... The ability of a structure in the form of a photovoltaic element with a built-in posistor layer based on a polymer nanocomposite with carbon filler being in direct thermal contact to protect against overvoltages was studied experimentally and by simulation.It was shown that the current and voltage on the reverse-biased p-n junction of the photovoltaic layer are limited and decrease from the moment when the temperature of this structure reaches values close to the tripping temperature of the posistor nano-composite to the low-conductivity state.The temperature of the photovoltaic layer has a value close to the tripping temperature of the posistor layer,which is equal to~125°C.The possibility of realizing protection against reverse electrical overvoltages and thermal breakdown of photovoltaic systems based on photovoltaic elements with built-in layers of posistor polymer nano-composites with carbon fillers was established. 展开更多
关键词 posistor polymer nanocomposite photovoltaic element OVERVOLTAGE KINETICS electrical characteristics modeling
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