LaMnO3 catalysts with three-dimensionally ordered holes perovskite structure were prepared via closepacked SiO2 template synthesized by Stober-Frink method. SEM, XRD and BET were employed to characterize the microstru...LaMnO3 catalysts with three-dimensionally ordered holes perovskite structure were prepared via closepacked SiO2 template synthesized by Stober-Frink method. SEM, XRD and BET were employed to characterize the microstructure, phases and specific surface area. CV method was used to the oxygen electrode beha-vior of catalysts. Diameter of the holes was about 330 nm, corresponding to the size of SiO2 template. Full-cell discharge tests were performed on aluminum-air battery fabricated by porous LaMnO3.Results showed that the discharge performance of porous LaMnO3 were 1.54 V, 1.42 V and 1.24 V respectively when the discharge currents were set at 5 mA/cm^2,10 mA/cm^2 and 20 mA/cm^2, respectively, which were higher than that of LaMnO3 prepared by coprecipitation method（1.33 V, 1.09 V, 0.63 V, respectively）.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. U1137601 and 51466005)the Science and Technology Program of Yunnan Province (Grant No.2014RD016)the Program for Innovative Research Team of Yunnan Province (Grant No. 2014HC013)
文摘LaMnO3 catalysts with three-dimensionally ordered holes perovskite structure were prepared via closepacked SiO2 template synthesized by Stober-Frink method. SEM, XRD and BET were employed to characterize the microstructure, phases and specific surface area. CV method was used to the oxygen electrode beha-vior of catalysts. Diameter of the holes was about 330 nm, corresponding to the size of SiO2 template. Full-cell discharge tests were performed on aluminum-air battery fabricated by porous LaMnO3.Results showed that the discharge performance of porous LaMnO3 were 1.54 V, 1.42 V and 1.24 V respectively when the discharge currents were set at 5 mA/cm^2,10 mA/cm^2 and 20 mA/cm^2, respectively, which were higher than that of LaMnO3 prepared by coprecipitation method（1.33 V, 1.09 V, 0.63 V, respectively）.
