激光与物体相互作用产生的频率转换特性,对于目标探测具有重要的意义。频率上转换回波信号具有强度弱、脉冲展宽、有相移等特性。根据这种回波特性,论文以PIN光电二极管为探测器件,采用锁定放大技术进行回波信号检测。通过前置放大电路...激光与物体相互作用产生的频率转换特性,对于目标探测具有重要的意义。频率上转换回波信号具有强度弱、脉冲展宽、有相移等特性。根据这种回波特性,论文以PIN光电二极管为探测器件,采用锁定放大技术进行回波信号检测。通过前置放大电路、交流信号放大电路完成回波信号的转换放大,运用相敏检波器实现回波信号提取,并搭建了回波探测系统。实验测试表明,基于锁定放大器的探测系统能够抑制杂波信号,从强噪声背景中提取有效回波信号,针对探测系统前方1.5 m处的探测靶标,系统的输出信噪比为16.9 d B。展开更多
A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorp...A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.展开更多
文摘激光与物体相互作用产生的频率转换特性,对于目标探测具有重要的意义。频率上转换回波信号具有强度弱、脉冲展宽、有相移等特性。根据这种回波特性,论文以PIN光电二极管为探测器件,采用锁定放大技术进行回波信号检测。通过前置放大电路、交流信号放大电路完成回波信号的转换放大,运用相敏检波器实现回波信号提取,并搭建了回波探测系统。实验测试表明,基于锁定放大器的探测系统能够抑制杂波信号,从强噪声背景中提取有效回波信号,针对探测系统前方1.5 m处的探测靶标,系统的输出信噪比为16.9 d B。
基金Project(61040061) supported by the National Natural Science Foundation of ChinaProject supported by Hunan Provincial Innovation Foundation for Postgraduate Students,China
文摘A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.
