An all-fiber optical modulator, which is composed of a piece of no-core fiber spliced between two sections of singlemode fibers and uses magnetic fluid（MF） as the cladding of the no-core fiber section, is proposed a...An all-fiber optical modulator, which is composed of a piece of no-core fiber spliced between two sections of singlemode fibers and uses magnetic fluid（MF） as the cladding of the no-core fiber section, is proposed and investigated experimentally. Due to the tunable refractive index and absorption coefficient of MF, the output intensity can be modulated by controlling an applied magnetic field. The dependences of the modulator＇s temporal response on the working wavelength,the magnetic field strength（H）, and the MF＇s concentration are investigated experimentally. The results are explained qualitatively by the dynamic response process of MF under the action of a magnetic field. The findings are helpful for optimizing this kind of modulator.展开更多
硅-有机材料混合(SOH)集成平台通过结合绝缘层上硅(SOI)波导和功能有机非线性材料打开了高速、超紧凑电光器件的发展之路。目前,基于SOH平台的电光调制器频率响应带宽可达100 GHz,在能耗仅为640 f J/bit时,数据传输速率可达112 Gbit/s...硅-有机材料混合(SOH)集成平台通过结合绝缘层上硅(SOI)波导和功能有机非线性材料打开了高速、超紧凑电光器件的发展之路。目前,基于SOH平台的电光调制器频率响应带宽可达100 GHz,在能耗仅为640 f J/bit时,数据传输速率可达112 Gbit/s。介绍了SOH集成平台,针对目前主要的SOH电光调制器类型,如马赫-曾德尔干涉仪型SOH电光调制器、SOH同步/正交相位型(IQ)电光调制器、微环型SOH电光调制器等,介绍了其工作原理、基本特性及国内外发展状况和趋势。展开更多
Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulatio...Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulation and switching,and efficient off-chip optical coupling.This paper presents the recent progress on fast silicon optical modulation,wavelength-insensitive optical switching and efficient optical coupling techniques in our group.Several CMOS-compatible silicon optical couplers with different structures have been developed,showing the highest coupling efficiency of 65%.Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized.Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.展开更多
The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages,including complementary metal–oxide–semiconductor（CMOS） compatibility and the ability to ...The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages,including complementary metal–oxide–semiconductor（CMOS） compatibility and the ability to achieve an ultra-high integration density. In particular, silicon nanophotonic integrated devices for on-chip light manipulation have been developed successfully and have played very import roles in various applications. In this paper, we review the recent progress of silicon nanophotonic devices for on-chip light manipulation, including the static type and the dynamic type. Static onchip light manipulation focuses on polarization/mode manipulation, as well as light nanofocusing, while dynamic on-chip light manipulation focuses on optical modulation/switching. The challenges and prospects of high-performance silicon nanophotonic integrated devices for on-chip light manipulation are discussed.展开更多
Silicon photonics is a promising technology to address the demand for dense and integrated nextgeneration optical interconnections due to its complementary-metal-oxide-semiconductor(CMOS) compatibility.However, one of...Silicon photonics is a promising technology to address the demand for dense and integrated nextgeneration optical interconnections due to its complementary-metal-oxide-semiconductor(CMOS) compatibility.However, one of the key building blocks, the silicon modulator, suffers from several drawbacks, including a limited bandwidth, a relatively large footprint, and high power consumption. The graphene-based silicon modulator, which benefits from the excellent optical properties of the two-dimensional graphene material with its unique band structure,has significantly advanced the above critical figures of merit. In this work, we review the state-of-the-art graphenebased silicon modulators operating in various mechanisms, i.e., thermal-optical, electro-optical, and plasmonic. It is shown that graphene-based silicon modulators possess the potential to have satisfactory characteristics in intra-and inter-chip connections.展开更多
基金Project supported by the Natural Science Foundation of Tianjin City,China(Grant No.13JCYBJC16100)the National Natural Science Foundation of China(Grant No.61107035)+1 种基金the National Key Scientific Instrument and Equipment Development Project of China(Grant No.2013YQ03091502)the National Basic Research Program of China(Grant Nos.2010CB327802 and 2010CB327806)
文摘An all-fiber optical modulator, which is composed of a piece of no-core fiber spliced between two sections of singlemode fibers and uses magnetic fluid（MF） as the cladding of the no-core fiber section, is proposed and investigated experimentally. Due to the tunable refractive index and absorption coefficient of MF, the output intensity can be modulated by controlling an applied magnetic field. The dependences of the modulator＇s temporal response on the working wavelength,the magnetic field strength（H）, and the MF＇s concentration are investigated experimentally. The results are explained qualitatively by the dynamic response process of MF under the action of a magnetic field. The findings are helpful for optimizing this kind of modulator.
文摘硅-有机材料混合(SOH)集成平台通过结合绝缘层上硅(SOI)波导和功能有机非线性材料打开了高速、超紧凑电光器件的发展之路。目前,基于SOH平台的电光调制器频率响应带宽可达100 GHz,在能耗仅为640 f J/bit时,数据传输速率可达112 Gbit/s。介绍了SOH集成平台,针对目前主要的SOH电光调制器类型,如马赫-曾德尔干涉仪型SOH电光调制器、SOH同步/正交相位型(IQ)电光调制器、微环型SOH电光调制器等,介绍了其工作原理、基本特性及国内外发展状况和趋势。
基金supported by the National Basic Research Program of China (Grant Nos. 2011CB301701,2012CB933502 and 2012CB933504)the National Natural Science Foundation of China (Grant Nos. 60877036 and 61107048)+1 种基金the Chinese Academy of Sciences for a fellowship for young international scientists (Grant No. 2011Y1GB07)the China Postdoctoral Science Foundation (Grant No. 2011M500372)
文摘Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulation and switching,and efficient off-chip optical coupling.This paper presents the recent progress on fast silicon optical modulation,wavelength-insensitive optical switching and efficient optical coupling techniques in our group.Several CMOS-compatible silicon optical couplers with different structures have been developed,showing the highest coupling efficiency of 65%.Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized.Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.
基金Project supported by the National Natural Science Foundation for Distinguished Young Scholars(Grant No.61725503)Zhejiang Provincial Natural Science Foundation(Grant No.Z18F050002)+1 种基金the National Natural Science Foundation of China(Grant Nos.61431166001 and 11861121002)the National Major Research and Development Program of China(Grant No.2016YFB0402502)
文摘The field of silicon nanophotonics has attracted considerable attention in the past decade because of its unique advantages,including complementary metal–oxide–semiconductor（CMOS） compatibility and the ability to achieve an ultra-high integration density. In particular, silicon nanophotonic integrated devices for on-chip light manipulation have been developed successfully and have played very import roles in various applications. In this paper, we review the recent progress of silicon nanophotonic devices for on-chip light manipulation, including the static type and the dynamic type. Static onchip light manipulation focuses on polarization/mode manipulation, as well as light nanofocusing, while dynamic on-chip light manipulation focuses on optical modulation/switching. The challenges and prospects of high-performance silicon nanophotonic integrated devices for on-chip light manipulation are discussed.
基金Project supported by the National Natural Science Foundation of China(Nos.61535002 and 61635001)
文摘Silicon photonics is a promising technology to address the demand for dense and integrated nextgeneration optical interconnections due to its complementary-metal-oxide-semiconductor(CMOS) compatibility.However, one of the key building blocks, the silicon modulator, suffers from several drawbacks, including a limited bandwidth, a relatively large footprint, and high power consumption. The graphene-based silicon modulator, which benefits from the excellent optical properties of the two-dimensional graphene material with its unique band structure,has significantly advanced the above critical figures of merit. In this work, we review the state-of-the-art graphenebased silicon modulators operating in various mechanisms, i.e., thermal-optical, electro-optical, and plasmonic. It is shown that graphene-based silicon modulators possess the potential to have satisfactory characteristics in intra-and inter-chip connections.
