Novel indium nitride （INN） leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method. The characterization results indicate that the samples are single-crystalline, and t...Novel indium nitride （INN） leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method. The characterization results indicate that the samples are single-crystalline, and the growth direction of the nanowires and nanoleaves is [0001]. The growth mechanism of the InN nanoleaves is following the pattern of vapor-liquid-solid process with a three-step growth process. In addition, the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 eV, where the emission from single nanoleaf is stronger than nanowire, showing potential for applications in optoelectronic devices.展开更多
基金supported by the National Natural Science Foundation of China (No. 51572230)the National Defense Fundamental Research Projects (No. A3120133002)+3 种基金the Youth Innovation Research Team of Sichuan for Carbon Nanomaterials (No. 2011JTD0017)the Applied Basic Research Program of Sichuan Province (No. 2014JY0170)the Postgraduate Innovation Fund Project by Southwest University of Science and Technology (No. 15ycx007)the Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials (No. 13zxfk09)
文摘Novel indium nitride （INN） leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method. The characterization results indicate that the samples are single-crystalline, and the growth direction of the nanowires and nanoleaves is [0001]. The growth mechanism of the InN nanoleaves is following the pattern of vapor-liquid-solid process with a three-step growth process. In addition, the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 eV, where the emission from single nanoleaf is stronger than nanowire, showing potential for applications in optoelectronic devices.
