三I推理方法是一种新的模糊推理方法,通过已有的研究成果表明,在许多方面它优于传统的CRI推理方法,它将成为模糊系统和人工智能的理论和应用研究中一个比较理想的推理机制。最近,国外学者提出了一个新的模糊逻辑形式系统,叫做Monoidal t...三I推理方法是一种新的模糊推理方法,通过已有的研究成果表明,在许多方面它优于传统的CRI推理方法,它将成为模糊系统和人工智能的理论和应用研究中一个比较理想的推理机制。最近,国外学者提出了一个新的模糊逻辑形式系统,叫做Monoidal t-norm based logics(简记为MTL),已经证明这个形式系统是所有基于左连续三角范数的模糊逻辑的共同形式化。本文基于这类逻辑将三I推理方法形式化,从而在这些逻辑系统中为三推理方法找到了可靠的逻辑依据。展开更多
Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(...Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential transconductance.These phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge layer.Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics.Thus,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.展开更多
文摘三I推理方法是一种新的模糊推理方法,通过已有的研究成果表明,在许多方面它优于传统的CRI推理方法,它将成为模糊系统和人工智能的理论和应用研究中一个比较理想的推理机制。最近,国外学者提出了一个新的模糊逻辑形式系统,叫做Monoidal t-norm based logics(简记为MTL),已经证明这个形式系统是所有基于左连续三角范数的模糊逻辑的共同形式化。本文基于这类逻辑将三I推理方法形式化,从而在这些逻辑系统中为三推理方法找到了可靠的逻辑依据。
基金Y.T.L.acknowledges the financial support from the National Research Foundation of Korea(NRF)(No.NRF-2021R1C1C1005235)D.K.H.acknowledges the financial support from the Korea Institute of Science and Technology(KIST)Institution Program(No.2E31532).
文摘Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential transconductance.These phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge layer.Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics.Thus,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
