In order to increase the usefulness of pulsed current source in engineering practice, research and study was carried out on how to increase the pulse current amplitude, reduce the rise /fall time of output pulse and M...In order to increase the usefulness of pulsed current source in engineering practice, research and study was carried out on how to increase the pulse current amplitude, reduce the rise /fall time of output pulse and MOSFET switching losses, etc. Through the analysis of the pulsed current source works theory and the mathematical derivation of the circuit model, the deduction and calculation of the pulse edge compression control methods, and improve the overall circuit structure and optimize the manufacturing process according to the theory. The following indicators was realized： the output pulse current amplitude can be up to 100 A, the shortest pulse rise / fall time was 18.8 ns and 16.1 ns respectively when the maximum amplitude output, the pulse width could be narrowest to 40 ns, repetition frequency could achieve 10 Hz to 10 k Hz, MOSFET switching losses decreased by 30.9 %. This pulsed current source can be used, not only as the power supply for the ordinary high speed narrow pulse width laser diode, but also as an ideal drive power for the high energy, narrow width pulse laser diode.展开更多
The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width6...The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.展开更多
基金supported by the Changchun Science and Technology Project (13KG28)the Jilin Province Science and Technology Development Plan (20120320)
文摘In order to increase the usefulness of pulsed current source in engineering practice, research and study was carried out on how to increase the pulse current amplitude, reduce the rise /fall time of output pulse and MOSFET switching losses, etc. Through the analysis of the pulsed current source works theory and the mathematical derivation of the circuit model, the deduction and calculation of the pulse edge compression control methods, and improve the overall circuit structure and optimize the manufacturing process according to the theory. The following indicators was realized： the output pulse current amplitude can be up to 100 A, the shortest pulse rise / fall time was 18.8 ns and 16.1 ns respectively when the maximum amplitude output, the pulse width could be narrowest to 40 ns, repetition frequency could achieve 10 Hz to 10 k Hz, MOSFET switching losses decreased by 30.9 %. This pulsed current source can be used, not only as the power supply for the ordinary high speed narrow pulse width laser diode, but also as an ideal drive power for the high energy, narrow width pulse laser diode.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15
文摘The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
