Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the develo...Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.展开更多
Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications.However,the scalable synth...Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications.However,the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted,also for the understanding of its formation mechanism.Herein,we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe_(2) nanosheets via chemical vapor deposition.Single-crystalline ultrathin 2D HfSe_(2) nanosheets were systematically grown by tuning the growth parameters,reaching the lateral size of 6‒40μm and the thickness down to 4.5 nm.The scalable amorphous HfO_(2)and HfSe_(2)heterostructures were achieved by the controllable oxidation,which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe_(2) templates.The crystal structure,elemental,and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf−O bonds,confirming the slow surface oxidation and lattice incorporation of oxygen atoms.The relatively smooth surface roughness and electrical potential change of HfO_(2)−HfSe_(2) heterostructures indicate the excellent interface quality,which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 s.Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe_(2) nanosheets,also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.展开更多
硅基互补型金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)场效应晶体管工艺已经发展到了14 nm技术节点,预计将很快到达其极限,需要寻找新的信息器件来延续摩尔定律.由于具备超小尺寸、高迁移率等显著优点,碳纳米管...硅基互补型金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)场效应晶体管工艺已经发展到了14 nm技术节点,预计将很快到达其极限,需要寻找新的信息器件来延续摩尔定律.由于具备超小尺寸、高迁移率等显著优点,碳纳米管被认为是后摩尔时代最有潜力替代硅作为晶体管沟道的纳米材料之一.经过近20年的研究,基于碳纳米管场效应晶体管的技术已经取得了巨大的进步.本文将回顾碳纳米管场效应晶体管领域的关键性技术,包括N型欧姆接触实现、"无掺杂"CMOS技术、自对准顶栅结构以及尺寸缩减技术等.而且我们将分析碳纳米管晶体管在大规模材料制备以及碳管和电极接触方面存在的问题,并提出可能的解决方案.在此基础上,通过分析实验数据和模拟结果,对碳纳米管电子学的未来发展做出预测和展望,结果表明碳纳米管晶体管的潜力巨大,通过对材料和器件结构进行合理优化,碳纳米管晶体管在性能上可能远远超过硅基半导体对应技术节点的晶体管,成为后摩尔时代极其具有竞争力的信息器件.展开更多
Molecular field-coupled nanocomputing(molFCN)encodes information in the molecule charge distribution and elaborates it through electrostatic coupling.Despite the advantageous sub-nanometric size and low-power dissipat...Molecular field-coupled nanocomputing(molFCN)encodes information in the molecule charge distribution and elaborates it through electrostatic coupling.Despite the advantageous sub-nanometric size and low-power dissipation,only a few attempts have been made to validate the technology experimentally.One of the obstacles is the difficulty in measuring molecule charges to validate information encoding or integrate molFCN with complementary-metal-oxide-semiconductor(CMOS).In this work,we propose a paradigm preserving the advantages of molFCN,which exploits the position of waiving molecules to augment the information encoding.We validate the paradigm,named bend-boosted molFCN,with density functional theory using 6-(ferrocenyl)hexanethiol cations.We demonstrate that the encoded information can be electrically read by constituting a molecular junction.The paradigm is compatible with the charge-based molFCN,thus acting as a readout system.The obtained results favor the experimental assessment of the molFCN principle through scanning probe microscopy techniques and the design of molFCN-CMOS heterogeneous circuits.展开更多
This is a summary,with extensive references,of several areas of chemistry in which the Breslow lab has been involved,leading to work still underway in several of them.The principal conclusions are described,but it wil...This is a summary,with extensive references,of several areas of chemistry in which the Breslow lab has been involved,leading to work still underway in several of them.The principal conclusions are described,but it will be necessary to consult the references for details of the work involved.展开更多
Nanotechnology may well prove to be the 21st century＇s new wave of scientific knowledge that transforms people＇s lives. Nanotechnology research activities are booming around the globe. This article reviews the recen...Nanotechnology may well prove to be the 21st century＇s new wave of scientific knowledge that transforms people＇s lives. Nanotechnology research activities are booming around the globe. This article reviews the recent progresses made on nanoelectronic research in US and China, and introduces several novel hybrid solutions specifically useful for future computer technology. These exciting new directions will lead to many future inventions, and have a huge impact to research communities and industries.展开更多
基金support from the National Natural Science Foundation of China (Grant Nos. 10874218, 50725209 and 60621091)Ministry of Science and Technology (Grant Nos. 2009DFA01290, 2006AA03Z402, 2007AA03Z353 and 2007CB936203),and Chinese Academy of Sciences
文摘Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.
基金the National Natural Science Foundation of China(Grant Nos.U23A20570 and 51902346)the Science and Technology Innovation Program of Hunan Province(“HuXiang Young Talents”,Grant No.2021RC3021)+1 种基金the Key Project of the Natural Science Program of Xinjiang Uygur Autonomous Region(Grant No.2023D01D03)the Natural Science Foundation of Hunan Province(Grant No.2021JJ40780).
文摘Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications.However,the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted,also for the understanding of its formation mechanism.Herein,we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe_(2) nanosheets via chemical vapor deposition.Single-crystalline ultrathin 2D HfSe_(2) nanosheets were systematically grown by tuning the growth parameters,reaching the lateral size of 6‒40μm and the thickness down to 4.5 nm.The scalable amorphous HfO_(2)and HfSe_(2)heterostructures were achieved by the controllable oxidation,which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe_(2) templates.The crystal structure,elemental,and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf−O bonds,confirming the slow surface oxidation and lattice incorporation of oxygen atoms.The relatively smooth surface roughness and electrical potential change of HfO_(2)−HfSe_(2) heterostructures indicate the excellent interface quality,which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 s.Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe_(2) nanosheets,also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.
文摘硅基互补型金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)场效应晶体管工艺已经发展到了14 nm技术节点,预计将很快到达其极限,需要寻找新的信息器件来延续摩尔定律.由于具备超小尺寸、高迁移率等显著优点,碳纳米管被认为是后摩尔时代最有潜力替代硅作为晶体管沟道的纳米材料之一.经过近20年的研究,基于碳纳米管场效应晶体管的技术已经取得了巨大的进步.本文将回顾碳纳米管场效应晶体管领域的关键性技术,包括N型欧姆接触实现、"无掺杂"CMOS技术、自对准顶栅结构以及尺寸缩减技术等.而且我们将分析碳纳米管晶体管在大规模材料制备以及碳管和电极接触方面存在的问题,并提出可能的解决方案.在此基础上,通过分析实验数据和模拟结果,对碳纳米管电子学的未来发展做出预测和展望,结果表明碳纳米管晶体管的潜力巨大,通过对材料和器件结构进行合理优化,碳纳米管晶体管在性能上可能远远超过硅基半导体对应技术节点的晶体管,成为后摩尔时代极其具有竞争力的信息器件.
文摘Molecular field-coupled nanocomputing(molFCN)encodes information in the molecule charge distribution and elaborates it through electrostatic coupling.Despite the advantageous sub-nanometric size and low-power dissipation,only a few attempts have been made to validate the technology experimentally.One of the obstacles is the difficulty in measuring molecule charges to validate information encoding or integrate molFCN with complementary-metal-oxide-semiconductor(CMOS).In this work,we propose a paradigm preserving the advantages of molFCN,which exploits the position of waiving molecules to augment the information encoding.We validate the paradigm,named bend-boosted molFCN,with density functional theory using 6-(ferrocenyl)hexanethiol cations.We demonstrate that the encoded information can be electrically read by constituting a molecular junction.The paradigm is compatible with the charge-based molFCN,thus acting as a readout system.The obtained results favor the experimental assessment of the molFCN principle through scanning probe microscopy techniques and the design of molFCN-CMOS heterogeneous circuits.
基金supported by grants from the U. S. National Institutes of Healththe U. S. National Science Foundation
文摘This is a summary,with extensive references,of several areas of chemistry in which the Breslow lab has been involved,leading to work still underway in several of them.The principal conclusions are described,but it will be necessary to consult the references for details of the work involved.
文摘Nanotechnology may well prove to be the 21st century＇s new wave of scientific knowledge that transforms people＇s lives. Nanotechnology research activities are booming around the globe. This article reviews the recent progresses made on nanoelectronic research in US and China, and introduces several novel hybrid solutions specifically useful for future computer technology. These exciting new directions will lead to many future inventions, and have a huge impact to research communities and industries.
