Among the important optoelectronic devices, ultraviolet （UV） photodetectors show wide applications in fire monitoring, biological analysis, environmental sensors, space exploration, and UV irradiation detections. Re...Among the important optoelectronic devices, ultraviolet （UV） photodetectors show wide applications in fire monitoring, biological analysis, environmental sensors, space exploration, and UV irradiation detections. Research interest has focused on the utilization of one-dimensional （1D） metal oxide nanostructures to build advanced UV photodetectors through various processes. With large surface-to-volume ratio and well-controlled morphology and composition, 1D metal oxide nanostructures are regarded as promising candidates as components for building photodetectors with excellent sensitivity, superior quantum efficiency, and fast response speed. This article reviews the latest achievements with 1D metal oxide nanostructures reported over the past five years and their applications in UV light detection. It begins with an introduction of 1D metal oxide nanostructures, and the significance, key parameters and types of photo- detectors. Then we present several kinds of widely-studied 1D nanostructures and their photodetection performance, focusing on binary oxides with wide- bandgap （such as ZnO, SnO2, Ga203, Nb2Os, and WO3） and ternary oxides （such as Zn2SnO4, Zn2GeO4, and In2Ge2OT）. Finally, the review concludes with our perspectives and outlook on future research directions in this field.展开更多
Nanoelectronic devices are being extensively developed in these years with a large variety of potential applications. In this article, some recent developments in nanoelectronic devices, including their principles, st...Nanoelectronic devices are being extensively developed in these years with a large variety of potential applications. In this article, some recent developments in nanoelectronic devices, including their principles, structures and potential applications are reviewed. As nanodevices work in nanometer dimensions, they consume much less power and function much faster than conventional microelectronic devices. Nanoelectronic devices can operate in different principles so that they can be further grouped into field emission devices,molecular devices, quantum devices, etc. Nanodevices can function as sensors, diodes, transistors, photovoltaic and light emitting devices, etc. Recent advances in both theoretical simulation and fabrication technologies expedite the development process from device design to prototype demonstration. Practical applications with a great market value from nanoelectronic devices are expected in near future.展开更多
A focus of the current nanotechnology has shifted from routine fabrication of nanostructures to designing functional electronic devices and realizing their immense potentials for applications. Due to infusion of multi...A focus of the current nanotechnology has shifted from routine fabrication of nanostructures to designing functional electronic devices and realizing their immense potentials for applications. Due to infusion of multi-functionality into a single system, the utilization of hetero-, core/shell and hierarchical nanostructures has become the key issue for building such devices. ZnS, due to its direct wide bandgap, high index of refraction, high transparency in the visible range and intrinsic polarity, is one of the most useful semiconductors for a wide range of electronics applications. This article provides a dense review of the state-of-the-art research activities in one-dimensional （1D） ZnS-based hetero-, core/shell and hierarchical nanostructures. The particular emphasis is put on their syntheses and applications.展开更多
Nanowires and nanotubes of diverse material compositions,properties and/or functions have been produced or fabricated through various bottom-up or top-down approaches.These nanowires or nanotubes have also been utiliz...Nanowires and nanotubes of diverse material compositions,properties and/or functions have been produced or fabricated through various bottom-up or top-down approaches.These nanowires or nanotubes have also been utilized as potential building blocks for functional nanodevices.The key for the integration of those nanowire or nanotube based devices is to assemble these one dimensional nanomaterials to specific locations using techniques that are highly controllable and scalable.Ideally such techniques should enable assembly of highly uniform nanowire/nanotube arrays with precise control of density,location,dimension or even material types of nanowires/nanotubes.Numerous assembly techniques are being developed that can quickly align and assemble large quantities of one type or multiple types of nanowires through parallel processes,including flow-assisted alignment,Langmuir-Blodgett assembly,bubble-blown technique,electric/magnetic-field directed assembly,contact/roll printing,knocking-down,etc..With these assembling techniques,applications of nanowire/nanotube based devices such as flexible electronics and sensors have been demonstrated.This paper delivers an overall review of directed nanowire/nanotube assembling approaches and analyzes advantages and limitations of each method.The future research directions have also been discussed.展开更多
We study how to use the surface states in a Bi2Se3 topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing.We demonstrate that:(i)surface states under the fi...We study how to use the surface states in a Bi2Se3 topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing.We demonstrate that:(i)surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed,(ii)the qubit can be initialized and manipulated using electric pulses of simple forms,(iii)two-qubit entanglement is achieved through a√SWAP operation when the two qubits are in a parallel setup,and(iv)alternatively,a Floquet state can be exploited to construct a qubit and two Floquet qubits can be entangled through a Controlled-NOT operation.The Floquet qubit offers robustness to background noise since there is always an oscillating electric field applied,and the single qubit operations are controlled by amplitude modulation of the oscillating field,which is convenient experimentally.展开更多
Traditional digital processing approaches are based on semiconductor transistors, which suffer from high power consumption, aggravating with technology node scaling. To solve definitively this problem, a number of eme...Traditional digital processing approaches are based on semiconductor transistors, which suffer from high power consumption, aggravating with technology node scaling. To solve definitively this problem, a number of emerging non-volatile nanodevices are under intense investigations. Meanwhile, novel computing circuits are invented to dig the full potential of the nanodevices. The combination of non-volatile nanodevices with suitable computing paradigms have many merits compared with the complementary metal-oxide-semiconductor transistor （CMOS） technology based structures, such as zero standby power, ultra-high density, non-volatility, and acceptable access speed. In this paper, we overview and compare the computing paradigms based on the emerging nanodevices towards ultra-low dissipation.展开更多
The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of ...The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.展开更多
The collective charge density excitations in a free-standing nanorod with a two-dimensional parabolic quantum well are investigated within the framework of Bohm-Pine＇s random-phase approximation in the two-subband mo...The collective charge density excitations in a free-standing nanorod with a two-dimensional parabolic quantum well are investigated within the framework of Bohm-Pine＇s random-phase approximation in the two-subband model.The new simplified analytical expressions of the Coulomb interaction matrix elements and dielectric functions are derived and numerically discussed.In addition,the electron density and temperature dependences of dispersion features are also investigated.We find that in the two-dimensional parabolic quantum well,the intrasubband upper branch is coupled with the intersubband mode,which is quite different from other quasi-one-dimensional systems like a cylindrical quantum wire with an infinite rectangular potential.In addition,we also find that higher temperature results in the intersubband mode（with an energy of 12 meV（～ 3 THz）） becoming totally damped,which agrees well with the experimental results of Raman scattering in the literature.These interesting properties may provide useful references to the design of free-standing nanorod based devices.展开更多
The performance of metal-insulator-semiconductor （MIS） type tunneling diodes based on ZnO nanostructures is investigated through modeling. The framework used in this work is the Schr6dinger equation with an effectiv...The performance of metal-insulator-semiconductor （MIS） type tunneling diodes based on ZnO nanostructures is investigated through modeling. The framework used in this work is the Schr6dinger equation with an effective-mass approximation. The working mechanism of the MIS type tunneling diode is investigated by examining the electron density, electric field, electrostatic potential, and conduction band edge of the device. We show that a valley in the electrostatic potential is formed at the ZnO/MgO interface, which induces an energy barrier at the ZnO side of this interface. Therefore, electrons need to overcome two barriers： the high and narrow MgO barrier, and the barrier from the depletion region induced at the ZnO side of the ZnO/MgO interface. As the MgO layer becomes thicker, the valley in electrostatic potential becomes deeper. At the same time, the barrier induced at the ZnO/MgO interface becomes higher and wider. This leads to a fast decrease in the current passing through the MIS diode. We optimize the thickness of the MgO insulating layer, sandwiched between a ZnO film （in this work we use a single ZnO nanowire） and a metal contact, to achieve maximum performance of the diode, in terms of rectification ratio. An optimal MgO layer thickness of 1.5 nm is found to yield the highest rectification ratio, of approximately 169 times that of a conventional metal-semiconductor-metal Schottky diode. These simulated results can be useful in the design and optimization of ZnO nanodevices, such as light emitting diodes and UV photodetectors.展开更多
The hybrid CMOS molecular （CMOL） circuit, which combines complementary metal-oxide- semiconductor （CMOS） components with nanoscale wires and switches, can exhibit significantly improved performance. In CMOL circui...The hybrid CMOS molecular （CMOL） circuit, which combines complementary metal-oxide- semiconductor （CMOS） components with nanoscale wires and switches, can exhibit significantly improved performance. In CMOL circuits, the nanodevices, which are called cells, should be placed appropriately and are connected by nanowires. The cells should be connected such that they follow the shortest path. This paper presents an efficient method of cell allocation in CMOL circuits with the hybrid CMOS/nanodevice structure; the method is based on a cultural algorithm with chaotic behavior. The optimal model of cell allocation is derived, and the coding of an individual represent- ing a cell allocation is described. Then the cultural algorithm with chaotic behavior is designed to solve the optimal model. The cultural algorithm consists of a population space, a belief space, and a protocol that describes how knowledge is exchanged between the population and belief spaces. In this paper, the evolutionary processes of the population space employ a genetic algorithm in which three populations undergo parallel evolution. The evolutionary processes of the belief space use a chaotic ant colony algorithm. Extensive experiments on cell allocation in benchmark circuits showed that a low area usage can be obtained using the proposed method, and the computation time can be reduced greatly compared to that of a conventional genetic algorithm.展开更多
文摘Among the important optoelectronic devices, ultraviolet （UV） photodetectors show wide applications in fire monitoring, biological analysis, environmental sensors, space exploration, and UV irradiation detections. Research interest has focused on the utilization of one-dimensional （1D） metal oxide nanostructures to build advanced UV photodetectors through various processes. With large surface-to-volume ratio and well-controlled morphology and composition, 1D metal oxide nanostructures are regarded as promising candidates as components for building photodetectors with excellent sensitivity, superior quantum efficiency, and fast response speed. This article reviews the latest achievements with 1D metal oxide nanostructures reported over the past five years and their applications in UV light detection. It begins with an introduction of 1D metal oxide nanostructures, and the significance, key parameters and types of photo- detectors. Then we present several kinds of widely-studied 1D nanostructures and their photodetection performance, focusing on binary oxides with wide- bandgap （such as ZnO, SnO2, Ga203, Nb2Os, and WO3） and ternary oxides （such as Zn2SnO4, Zn2GeO4, and In2Ge2OT）. Finally, the review concludes with our perspectives and outlook on future research directions in this field.
基金supported by National High Technology Research and Development Program of China(No.2011AA050504)Shanghai Science and Technology Grant (No.12nm0503800 and No.12nm0503500)the Analytical and Testing Center of SJTU
文摘Nanoelectronic devices are being extensively developed in these years with a large variety of potential applications. In this article, some recent developments in nanoelectronic devices, including their principles, structures and potential applications are reviewed. As nanodevices work in nanometer dimensions, they consume much less power and function much faster than conventional microelectronic devices. Nanoelectronic devices can operate in different principles so that they can be further grouped into field emission devices,molecular devices, quantum devices, etc. Nanodevices can function as sensors, diodes, transistors, photovoltaic and light emitting devices, etc. Recent advances in both theoretical simulation and fabrication technologies expedite the development process from device design to prototype demonstration. Practical applications with a great market value from nanoelectronic devices are expected in near future.
基金World Premier International Research Center Initiative(WPI Initiative)on Materials Nanoarchitronics,MEXT,Japanthe Japan Society for the Promotion of Science (JSPS)for a support in the form of a fellowship tenable at the National Institute for Materials Science,Tsukuba,Japan.
文摘A focus of the current nanotechnology has shifted from routine fabrication of nanostructures to designing functional electronic devices and realizing their immense potentials for applications. Due to infusion of multi-functionality into a single system, the utilization of hetero-, core/shell and hierarchical nanostructures has become the key issue for building such devices. ZnS, due to its direct wide bandgap, high index of refraction, high transparency in the visible range and intrinsic polarity, is one of the most useful semiconductors for a wide range of electronics applications. This article provides a dense review of the state-of-the-art research activities in one-dimensional （1D） ZnS-based hetero-, core/shell and hierarchical nanostructures. The particular emphasis is put on their syntheses and applications.
基金the financial support from Natural Science and Engineering Research Council of Canada (NSERC)funding from Science and Technology Commission of Shanghai Municipality (No.11PJ1403500)+1 种基金the Open Project Program of State Key Laboratory of Industrial Control Technology (No.ICT1113)Innovation Program of Shanghai Municipal Education Commission (No.12YZ022)
文摘Nanowires and nanotubes of diverse material compositions,properties and/or functions have been produced or fabricated through various bottom-up or top-down approaches.These nanowires or nanotubes have also been utilized as potential building blocks for functional nanodevices.The key for the integration of those nanowire or nanotube based devices is to assemble these one dimensional nanomaterials to specific locations using techniques that are highly controllable and scalable.Ideally such techniques should enable assembly of highly uniform nanowire/nanotube arrays with precise control of density,location,dimension or even material types of nanowires/nanotubes.Numerous assembly techniques are being developed that can quickly align and assemble large quantities of one type or multiple types of nanowires through parallel processes,including flow-assisted alignment,Langmuir-Blodgett assembly,bubble-blown technique,electric/magnetic-field directed assembly,contact/roll printing,knocking-down,etc..With these assembling techniques,applications of nanowire/nanotube based devices such as flexible electronics and sensors have been demonstrated.This paper delivers an overall review of directed nanowire/nanotube assembling approaches and analyzes advantages and limitations of each method.The future research directions have also been discussed.
文摘We study how to use the surface states in a Bi2Se3 topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing.We demonstrate that:(i)surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed,(ii)the qubit can be initialized and manipulated using electric pulses of simple forms,(iii)two-qubit entanglement is achieved through a√SWAP operation when the two qubits are in a parallel setup,and(iv)alternatively,a Floquet state can be exploited to construct a qubit and two Floquet qubits can be entangled through a Controlled-NOT operation.The Floquet qubit offers robustness to background noise since there is always an oscillating electric field applied,and the single qubit operations are controlled by amplitude modulation of the oscillating field,which is convenient experimentally.
文摘Traditional digital processing approaches are based on semiconductor transistors, which suffer from high power consumption, aggravating with technology node scaling. To solve definitively this problem, a number of emerging non-volatile nanodevices are under intense investigations. Meanwhile, novel computing circuits are invented to dig the full potential of the nanodevices. The combination of non-volatile nanodevices with suitable computing paradigms have many merits compared with the complementary metal-oxide-semiconductor transistor （CMOS） technology based structures, such as zero standby power, ultra-high density, non-volatility, and acceptable access speed. In this paper, we overview and compare the computing paradigms based on the emerging nanodevices towards ultra-low dissipation.
文摘The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60976008,61006004,61076001,and 10979507)the National Basic Research Program of China(Grant No.A000091109-05)the National High Technology Research and Development Program of China(Grant No.2011AA03A101)
文摘The collective charge density excitations in a free-standing nanorod with a two-dimensional parabolic quantum well are investigated within the framework of Bohm-Pine＇s random-phase approximation in the two-subband model.The new simplified analytical expressions of the Coulomb interaction matrix elements and dielectric functions are derived and numerically discussed.In addition,the electron density and temperature dependences of dispersion features are also investigated.We find that in the two-dimensional parabolic quantum well,the intrasubband upper branch is coupled with the intersubband mode,which is quite different from other quasi-one-dimensional systems like a cylindrical quantum wire with an infinite rectangular potential.In addition,we also find that higher temperature results in the intersubband mode（with an energy of 12 meV（～ 3 THz）） becoming totally damped,which agrees well with the experimental results of Raman scattering in the literature.These interesting properties may provide useful references to the design of free-standing nanorod based devices.
基金Acknowledgements This work was supported by the National Basic Research Program of China （No. 2013CB932602）, the Program of Introducing Talents of Discipline to Universities （No. B14003）, National Natural Science Foundation of China （Nos. 51572021, 51527802, and 51232001）, Beijing Municipal Science ＆ Technology Commission, and the Fundamental Research Funds for Central Universities. M. A. M. and Y. Z. would also like to acknowledge the support of the Newton International Research Collaboration Programme （No. NRCP/1415/129）.
文摘The performance of metal-insulator-semiconductor （MIS） type tunneling diodes based on ZnO nanostructures is investigated through modeling. The framework used in this work is the Schr6dinger equation with an effective-mass approximation. The working mechanism of the MIS type tunneling diode is investigated by examining the electron density, electric field, electrostatic potential, and conduction band edge of the device. We show that a valley in the electrostatic potential is formed at the ZnO/MgO interface, which induces an energy barrier at the ZnO side of this interface. Therefore, electrons need to overcome two barriers： the high and narrow MgO barrier, and the barrier from the depletion region induced at the ZnO side of the ZnO/MgO interface. As the MgO layer becomes thicker, the valley in electrostatic potential becomes deeper. At the same time, the barrier induced at the ZnO/MgO interface becomes higher and wider. This leads to a fast decrease in the current passing through the MIS diode. We optimize the thickness of the MgO insulating layer, sandwiched between a ZnO film （in this work we use a single ZnO nanowire） and a metal contact, to achieve maximum performance of the diode, in terms of rectification ratio. An optimal MgO layer thickness of 1.5 nm is found to yield the highest rectification ratio, of approximately 169 times that of a conventional metal-semiconductor-metal Schottky diode. These simulated results can be useful in the design and optimization of ZnO nanodevices, such as light emitting diodes and UV photodetectors.
文摘The hybrid CMOS molecular （CMOL） circuit, which combines complementary metal-oxide- semiconductor （CMOS） components with nanoscale wires and switches, can exhibit significantly improved performance. In CMOL circuits, the nanodevices, which are called cells, should be placed appropriately and are connected by nanowires. The cells should be connected such that they follow the shortest path. This paper presents an efficient method of cell allocation in CMOL circuits with the hybrid CMOS/nanodevice structure; the method is based on a cultural algorithm with chaotic behavior. The optimal model of cell allocation is derived, and the coding of an individual represent- ing a cell allocation is described. Then the cultural algorithm with chaotic behavior is designed to solve the optimal model. The cultural algorithm consists of a population space, a belief space, and a protocol that describes how knowledge is exchanged between the population and belief spaces. In this paper, the evolutionary processes of the population space employ a genetic algorithm in which three populations undergo parallel evolution. The evolutionary processes of the belief space use a chaotic ant colony algorithm. Extensive experiments on cell allocation in benchmark circuits showed that a low area usage can be obtained using the proposed method, and the computation time can be reduced greatly compared to that of a conventional genetic algorithm.
