Geomagnetic storm events have a strong influence on the ionosphere–thermosphere(I-T)coupling system.Analyzing the regional response process of the I-T system and its differences across the northern and southern hemis...Geomagnetic storm events have a strong influence on the ionosphere–thermosphere(I-T)coupling system.Analyzing the regional response process of the I-T system and its differences across the northern and southern hemispheres is an important but challenging task.In this study,we used a combination of multiple observations and a model simulation to examine the north–south hemispheric difference in the I-T coupling system in the American and Asian sectors during the geomagnetic superstorm that occurred in May 2024.Observations of the total electron content(TEC)showed that the Asian sector had negative storms in the northern hemisphere and positive storms in the southern hemisphere,a process that exacerbated the hemispheric differences in the TEC.However,both hemispheres of the American sector showed negative storms.The thermospheric composition changes also differed between the two sectors,and their variation could partially explain the hemispheric differences caused by positive and negative storms.Moreover,the influence of the thermospheric density change was less than that of the thermospheric composition.Finally,the dynamic effect of the thermospheric wind and the plasma transport processes strongly modulated the north–south differences in the TEC at nighttime in the American and Asian sectors,respectively,during this superstorm.展开更多
It is known that gas flow rate is a key factor in controlling industrial plasma processing. In this paper, a 2D PIC/MCC model is developed for an rf hollow cathode discharge with an axial nitrogen gas flow. The effect...It is known that gas flow rate is a key factor in controlling industrial plasma processing. In this paper, a 2D PIC/MCC model is developed for an rf hollow cathode discharge with an axial nitrogen gas flow. The effects of the gas flow rate on the plasma parameters are calculated and the results show that： with an increasing flow rate, the total ion（N＋2, N＋） density decreases, the mean sheath thickness becomes wider, the radial electric field in the sheath and the axial electric field show an increase, and the energies of both kinds of nitrogen ions increase;and, as the axial ion current density that is moving toward the ground electrode increases, the ion current density near the ground electrode increases. The simulation results will provide a useful reference for plasma jet technology involving rf hollow cathode discharges in N2.展开更多
The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si ...The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.展开更多
The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 42030202, 42241115, and 42174204)the China Postdoctoral Science Foundation (Grant No. 2023M743467)+2 种基金the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. Y202021)the National Key R&D Program of China (Grant No. 2022YFF0504400)the Opening Funding of the Chinese Academy of Sciences dedicated to the Chinese Meridian Project
文摘Geomagnetic storm events have a strong influence on the ionosphere–thermosphere(I-T)coupling system.Analyzing the regional response process of the I-T system and its differences across the northern and southern hemispheres is an important but challenging task.In this study,we used a combination of multiple observations and a model simulation to examine the north–south hemispheric difference in the I-T coupling system in the American and Asian sectors during the geomagnetic superstorm that occurred in May 2024.Observations of the total electron content(TEC)showed that the Asian sector had negative storms in the northern hemisphere and positive storms in the southern hemisphere,a process that exacerbated the hemispheric differences in the TEC.However,both hemispheres of the American sector showed negative storms.The thermospheric composition changes also differed between the two sectors,and their variation could partially explain the hemispheric differences caused by positive and negative storms.Moreover,the influence of the thermospheric density change was less than that of the thermospheric composition.Finally,the dynamic effect of the thermospheric wind and the plasma transport processes strongly modulated the north–south differences in the TEC at nighttime in the American and Asian sectors,respectively,during this superstorm.
基金supported by the Natural Science Foundation of Hebei Province,China(No.A2012205072)
文摘It is known that gas flow rate is a key factor in controlling industrial plasma processing. In this paper, a 2D PIC/MCC model is developed for an rf hollow cathode discharge with an axial nitrogen gas flow. The effects of the gas flow rate on the plasma parameters are calculated and the results show that： with an increasing flow rate, the total ion（N＋2, N＋） density decreases, the mean sheath thickness becomes wider, the radial electric field in the sheath and the axial electric field show an increase, and the energies of both kinds of nitrogen ions increase;and, as the axial ion current density that is moving toward the ground electrode increases, the ion current density near the ground electrode increases. The simulation results will provide a useful reference for plasma jet technology involving rf hollow cathode discharges in N2.
基金supported by the High Level Talent Project of Xiamen University of Technology,China(Grant Nos.YKJ16012R and YKJ16016R)the National Natural Science Foundation of China(Grant No.51702271)
文摘The N2-plasma treatment on a HfO2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO2/Si O2/p-Si are also characterized. After N2-plasma treatment, the nitrogen atoms are incorporated into HfO2 film and may passivate the oxygen vacancy states. The surface roughness of HfO2 film can also be reduced. Those improvements of HfO2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N2-plasma is introduced into Au nanocrystal（NC） nonvolatile memory to treat the HfO2 blocking layer. For the N2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N2-plasma treated device. It can be concluded that the N2-plasma treatment method can be applied to future nonvolatile memory applications.
基金supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003)the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335)+2 种基金the Project(No.9140C140101140C14069)the Innovation Project of GUET Graduate Education(No.YJCXS201529)the National Science&Technology Major Project of China(No.2011ZX02708-003)
文摘The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.
