This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) su...This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (V<sub>T</sub>), subthreshold slope (S), mobility (μ), onset voltage (V<sub>on</sub>) and I<sub>on</sub>/I<sub>off</sub> ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, I<sub>off</sub> current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.展开更多
研究了方形钛-芳纶蜂窝夹芯板在电炮驱动的高速聚酯飞片撞击加载下的动力响应,给出了面板和蜂窝芯层在不同冲击速度下的变形及失效模式。采用VISAR(velocity interferometer system for any reflector)测速技术测量了后面板中心点的速...研究了方形钛-芳纶蜂窝夹芯板在电炮驱动的高速聚酯飞片撞击加载下的动力响应,给出了面板和蜂窝芯层在不同冲击速度下的变形及失效模式。采用VISAR(velocity interferometer system for any reflector)测速技术测量了后面板中心点的速度时程,分析了芳纶蜂窝夹芯板的动态响应过程,讨论了冲击速度对夹芯板动力响应和抗冲击能力的影响。研究结果表明,低波阻抗的芳纶蜂窝破碎行为阻断了应力波向后面板的传播途径,破碎的蜂窝和塑形大变形的前面板吸收了高速冲击的大部分能量,充分发挥了钛合金的高强度和芳纶蜂窝的缓冲吸能特性,提高了夹芯板整体的防护能力。展开更多
文摘This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (V<sub>T</sub>), subthreshold slope (S), mobility (μ), onset voltage (V<sub>on</sub>) and I<sub>on</sub>/I<sub>off</sub> ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, I<sub>off</sub> current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.
文摘研究了方形钛-芳纶蜂窝夹芯板在电炮驱动的高速聚酯飞片撞击加载下的动力响应,给出了面板和蜂窝芯层在不同冲击速度下的变形及失效模式。采用VISAR(velocity interferometer system for any reflector)测速技术测量了后面板中心点的速度时程,分析了芳纶蜂窝夹芯板的动态响应过程,讨论了冲击速度对夹芯板动力响应和抗冲击能力的影响。研究结果表明,低波阻抗的芳纶蜂窝破碎行为阻断了应力波向后面板的传播途径,破碎的蜂窝和塑形大变形的前面板吸收了高速冲击的大部分能量,充分发挥了钛合金的高强度和芳纶蜂窝的缓冲吸能特性,提高了夹芯板整体的防护能力。
