High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scal...High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)method.Prior to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the growth.The grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire wafer.The sapphire substrates are reusable for subsequent growth.The same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.展开更多
Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and optoelectronics.In this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrate...Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and optoelectronics.In this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide(MoSe_(2))single crystals,in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth.Combined with the epitaxial sapphire substrate,unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe_(2) films have been demonstrated on a 2-inch wafer for the first time.A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe_(2).This work provides a universal strategy for the growth of TMD single-crystal films.展开更多
文摘High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)method.Prior to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the growth.The grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire wafer.The sapphire substrates are reusable for subsequent growth.The same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.
基金This work was supported by the National Key R&D Program of China(2022YFB4400100 and 2021YFA0715600)the Leading-edge Technology Program of Jiangsu Natural Science Foundation(BK20202005)+4 种基金the National Natural Science Foundation of China(T2221003,61927808,61734003,61861166001,and 62204113)the Natural Science Foundation of Jiangsu Province(BK20220773)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)Key Laboratory of Advanced Photonic and Electronic Materials,Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronicsthe Fundamental Research Funds for the Central Universities,China.
文摘Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and optoelectronics.In this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide(MoSe_(2))single crystals,in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth.Combined with the epitaxial sapphire substrate,unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe_(2) films have been demonstrated on a 2-inch wafer for the first time.A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe_(2).This work provides a universal strategy for the growth of TMD single-crystal films.
