Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties and unique demands in next-generation displays. However, the small size of the microLED chip (1–100 µm) makes it extremel...Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties and unique demands in next-generation displays. However, the small size of the microLED chip (1–100 µm) makes it extremely challenging for high efficiency and low cost to accurately, selectively, integrate millions of microLED chips. Recent impressive technological advances have overcome the drawbacks of traditional pick-and-place techniques when they were utilized in the assembly of microLED display, including the most broadly recognized laser lift-off technique, contact micro-transfer printing (µTP) technique, laser non-contact µTP technique, and self-assembly technique. Herein, we firstly review the key developments in mass transfer technique and highlight their potential value, covering both the state-of-the-art devices and requirements for mass transfer in the assembly of the ultra-large-area display and virtual reality glasses. We begin with the significant challenges and the brief history of mass transfer technique, and expand that mass transfer technique is composed of two major techniques, namely, the epitaxial Lift-off technique and the pick-and-place technique. The basic concept and transfer effects for each representative epitaxial Lift-off and pick-and-place technique in mass transfer are then overviewed separately. Finally, the potential challenges and future research directions of mass transfer are discussed.展开更多
Miniaturization of light-emitting diodes(LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definiti...Miniaturization of light-emitting diodes(LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions,augmented/mixed realities and head-up displays, and also on optogenetics, high-speed light communication, etc. The conventional top-down technology uses dry etching to define the LED size, leading to damage to the LED side walls.Since sizes of microLEDs approach the carrier diffusion length, the damaged side walls play an important role, reducing microLED performance significantly from that of large area LEDs. In this paper, we review our efforts on realization of microLEDs by direct bottom-up growth, based on selective area metal–organic vapor phase epitaxy. The individual LEDs based on either GaN nanowires or InGaN platelets are smaller than 1 μm in our approach. Such nano-LEDs can be used as building blocks in arrays to assemble microLEDs with different sizes, avoiding the side wall damage by dry etching encountered for the top-down approach. The technology of InGaN platelets is especially interesting since InGaN quantum wells emitting red, green and blue light can be grown on such platelets with a low-level of strain by changing the indium content in the InGaN platelets. This technology is therefore very attractive for highly efficient microLEDs of three primary colors for displays.展开更多
文摘Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties and unique demands in next-generation displays. However, the small size of the microLED chip (1–100 µm) makes it extremely challenging for high efficiency and low cost to accurately, selectively, integrate millions of microLED chips. Recent impressive technological advances have overcome the drawbacks of traditional pick-and-place techniques when they were utilized in the assembly of microLED display, including the most broadly recognized laser lift-off technique, contact micro-transfer printing (µTP) technique, laser non-contact µTP technique, and self-assembly technique. Herein, we firstly review the key developments in mass transfer technique and highlight their potential value, covering both the state-of-the-art devices and requirements for mass transfer in the assembly of the ultra-large-area display and virtual reality glasses. We begin with the significant challenges and the brief history of mass transfer technique, and expand that mass transfer technique is composed of two major techniques, namely, the epitaxial Lift-off technique and the pick-and-place technique. The basic concept and transfer effects for each representative epitaxial Lift-off and pick-and-place technique in mass transfer are then overviewed separately. Finally, the potential challenges and future research directions of mass transfer are discussed.
基金supported by the Swedish Research Council (VR),the Foundation for Strategic Research (SSF),the Knut and Alice Wallenberg foundation (KAW),the Swedish Energy Agency and Sweden’s innovation agency (VINNOVA)。
文摘Miniaturization of light-emitting diodes(LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions,augmented/mixed realities and head-up displays, and also on optogenetics, high-speed light communication, etc. The conventional top-down technology uses dry etching to define the LED size, leading to damage to the LED side walls.Since sizes of microLEDs approach the carrier diffusion length, the damaged side walls play an important role, reducing microLED performance significantly from that of large area LEDs. In this paper, we review our efforts on realization of microLEDs by direct bottom-up growth, based on selective area metal–organic vapor phase epitaxy. The individual LEDs based on either GaN nanowires or InGaN platelets are smaller than 1 μm in our approach. Such nano-LEDs can be used as building blocks in arrays to assemble microLEDs with different sizes, avoiding the side wall damage by dry etching encountered for the top-down approach. The technology of InGaN platelets is especially interesting since InGaN quantum wells emitting red, green and blue light can be grown on such platelets with a low-level of strain by changing the indium content in the InGaN platelets. This technology is therefore very attractive for highly efficient microLEDs of three primary colors for displays.
