Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performanc...Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator.The CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs.Together with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated circuits.Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over 160.Two adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3000 cm2 V-1 s-1) and holes(3300 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.展开更多
The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-bas...The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.展开更多
基金supported by the Ministry of Science and Technology of China (2011CB933001,2011CB933002)the Fundamental Research Funds for Central Universitiesthe National Natural Science Foundation of China (61071013,61001016)
文摘Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator.The CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs.Together with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated circuits.Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over 160.Two adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3000 cm2 V-1 s-1) and holes(3300 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.
基金Support by the Third World Academy of Sciences (TWAS)the National Natural Science Foundation of China (No.10735060)
文摘The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.
