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Sideband-Induced Two-Photon Transparency
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作者 程广玲 胡响明 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第8期2084-2087,共4页
We show that it is possible to use a single sideband to induce two-photon transparency in a three-level cascade medium. The medium simultaneously absorbs two photons as a one-step process when the middle level is far ... We show that it is possible to use a single sideband to induce two-photon transparency in a three-level cascade medium. The medium simultaneously absorbs two photons as a one-step process when the middle level is far off one-photon resonance. A resonant sideband coupling on the upper transition and the two-photon one-step process drive the medium into a trapped state, and the dominant component is the ground state. Thus almost all population is trapped in the ground state and the two-photon absorption is dramatically suppressed. We present a numerical calculation for arbitrary values of the atomic and field parameters and also provide an analytic description for the required conditions. 展开更多
关键词 ELECTROMAGNETICALLY INDUCED TRANSPARENCY STRONG BICHROMATIC field modulated laser field 2-LEVEL ATOM DRIVEN RESONANCE-FLUORESCENCE ABSORPTION-SPECTRA QUANTUM COHERENCE INVERSION AMPLITUDE ENHANCEMENT
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Simulation of Intermediate State Absorption Enhancement in Rare-Earth Ions by Polarization Modulated Femtosecond Laser Field
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作者 Wen-Jing Cheng Shi-Hua Zhao 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第11期23-27,共5页
We extend the third perturbation theory to study the polarization control behavior of the intermediate state absorption in Nd^(3+)ions. The results show that coherent interference can occur between the single-photo... We extend the third perturbation theory to study the polarization control behavior of the intermediate state absorption in Nd^(3+)ions. The results show that coherent interference can occur between the single-photon and three-photon excitation pathways, and depends on the central frequency of the femtosecond laser field. Moreover,single-photon and three-photon absorptions have different polarization control efficiencies, and the relative weight of three-photon absorption in the whole excitation processes can increase with increasing the laser intensity.Therefore, the enhancement or suppression of the intermediate state absorption can be realized and manipulated by properly designing the intensity and central frequency of the polarization modulated femtosecond laser field.This research can not only enrich theoretical research methods for the up-conversion luminescence manipulation of rare-earth ions, but also can provide a clear physical picture for understanding and controlling multi-photon absorption in a multiple energy level system. 展开更多
关键词 ab Simulation of Intermediate State Absorption Enhancement in Rare-Earth Ions by Polarization modulated Femtosecond laser field
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一种新型电吸收调制激光器的优化设计 被引量:1
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作者 孙元新 杨振强 +2 位作者 贾华宇 余洁 李灯熬 《光通信研究》 2023年第2期69-78,共10页
针对传统选择性区域生长叠层双有源区电吸收调制激光器(SAG-DSAL-EML)在高频调制环境下的响应速度问题以及改善其远场发散角特性,文章提出利用掺铁掩埋技术对电吸收调制激光器(EML)结构进行优化,设计了InGaAsP/InP材料1310 nm掺铁掩埋... 针对传统选择性区域生长叠层双有源区电吸收调制激光器(SAG-DSAL-EML)在高频调制环境下的响应速度问题以及改善其远场发散角特性,文章提出利用掺铁掩埋技术对电吸收调制激光器(EML)结构进行优化,设计了InGaAsP/InP材料1310 nm掺铁掩埋结构的SAG-DSAL-EML并制作样本芯片,新型SAG-DSAL-EML有源区变为台面结构,并在其两层外延生长掺铁InP层。同时,利用先进激光二极管模拟器(ALDS)软件和高频结构仿真(HFSS)软件对所设计掺铁掩埋结构的EML和调制器进行数值及仿真分析,结果表明,与传统多量子阱结构相比,SAG-DSAL-EML阈值电流减少了13%;与传统脊波导结构相比,掺铁掩埋结构的侧向限制能力提高52%,激光远场横纵角度之差降低了40%,具有更小的远场发散角;与传统PNPN掩埋结构相比,掺铁掩埋结构的调制器在-3 dB的响应带宽提高了约24%。对样本芯片进行测试,试验表明,SAG-DSAL-EML的阈值电流为14.5 mA,边模抑制比(SMSR)为45.64 dB,70 mA注入电流下,电吸收调制器-3 dB的响应带宽为43 GHz,满足高速激光通信的基本要求。 展开更多
关键词 电吸收调制激光器 台面结构 掺铁掩埋技术 调制带宽 远场发散角
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1.55μm电流调制半导体激光器混沌的自适应控制 被引量:1
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作者 黄良玉 罗晓曙 方锦清 《原子能科学技术》 EI CAS CSCD 北大核心 2006年第2期252-256,共5页
通过加入调制电流的方式使1.55μm半导体激光系统处于混沌状态,再加入参数自适应控制,将激光输出控制在所需的输出强度上。用该方法可根据不同的控制目标选择不同的控制强度,在控制范围内能很快获得所需稳定的输出激光。研究结果对改善... 通过加入调制电流的方式使1.55μm半导体激光系统处于混沌状态,再加入参数自适应控制,将激光输出控制在所需的输出强度上。用该方法可根据不同的控制目标选择不同的控制强度,在控制范围内能很快获得所需稳定的输出激光。研究结果对改善实际激光系统稳态输出的快速性、输出功率的灵活可调性和能量转换效率有较好的参考价值。 展开更多
关键词 1.55μm电流调制半导体激光器 混沌 自适应控制 输出光场
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LD-pumped high repetition rate Q-switched Nd:YVO_4 laser by using La_3Ga_5SiO_(14) single crystal electro-optic modulator 被引量:4
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作者 王春雨 臧华国 +2 位作者 李小莉 陆雨田 朱小磊 《Chinese Optics Letters》 SCIE EI CAS CSCD 2006年第6期329-331,共3页
A diode-end-pumped electro-optic (EO) Q-switched Nd:YVO4 laser operating at repetition rate of 10 kpps (pulses per second) was reported. A block of La3Ga5SiO14 (LGS) single crystal was used as a Q-switch and th... A diode-end-pumped electro-optic (EO) Q-switched Nd:YVO4 laser operating at repetition rate of 10 kpps (pulses per second) was reported. A block of La3Ga5SiO14 (LGS) single crystal was used as a Q-switch and the driver was a metal oxide semiconductor field effect transistor (MOS-FET) pulser of high repetition rate and high voltage. At continuous wave (CW) operation, the slope efficiency of the laser was 46%, and maximum optical-to-optical efficiency was 38.5%. Using an output coupler with transmission of 70%, a 10-kpps Q-switched pulse train with 0.4-mJ monopulse energy and 8.2-ns pulse width was achieved, the optical conversion efficiency was around 15%, and the beam quality M^2 factor was less than 1.2. 展开更多
关键词 Electric potential Electrooptical devices Energy conversion field effect transistors laser pulses modulators MOSFET devices Pumping (laser) Single crystals Transmissions
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