The layered LiNi0.6Co0.2-xMn0.2MgxO2 （x=0.00,0.03,0.05,0.07） cathode materials were prepared by a co-precipitation method.The properties of the Mg-doped LiNi0.6Co0.2Mn0.2O2 were investigated by X-ray diffraction （...The layered LiNi0.6Co0.2-xMn0.2MgxO2 （x=0.00,0.03,0.05,0.07） cathode materials were prepared by a co-precipitation method.The properties of the Mg-doped LiNi0.6Co0.2Mn0.2O2 were investigated by X-ray diffraction （XRD）,scanning electron microscopy （SEM）,and electrochemical measurements.XRD studies showed that the Mg-doped LiNi0.6Co0.2Mn0.2O2 had the same layered structure as the undoped LiNi0.6Co0.2Mn0.2O2.The SEM images exhibited that the particle size of Mg-doped LiNi0.6Co0.2Mn0.2O2 was finer than that of the undoped LiNi0.6Co0.2 Mn0.2O2 and that the smallest particle size is only about 1μm.The Mg-doped LiNi0.6Co0.2Mn0.2O2 samples were investigated on the Li extraction/insertion performances through charge/discharge,cyclic voltammogram （CV）,and electrochemical impedance spectra（EIS）.The optimal doping content of Mg was that x= 0.03 in the LiNi0.6Co0.2-xMn0.2MgxO2 samples to achieve high discharge capacity and good cyclic stability.The electrode reaction reversibility and electronic conductivity was enhanced,and the charge transfer resistance was decreased through Mg-doping.The improved electrochemical performances of the Mg-doped LiNi0.6Co0.2Mn0.2O2 cathode materials are attributed to the addition of Mg 2＋ ion by stabilizing the layer structure.展开更多
Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural a...Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.展开更多
Li3Mg（2x）V（2-2x）（PO4）3/C（x=0,0.05,0.1,0.2） composites were synthesized by carbothermic reduction,using a self-made MgNH4PO4/MgHPO4 compound as Mg-doping agent.X-ray diffraction（XRD）,scanning electron microsc...Li3Mg（2x）V（2-2x）（PO4）3/C（x=0,0.05,0.1,0.2） composites were synthesized by carbothermic reduction,using a self-made MgNH4PO4/MgHPO4 compound as Mg-doping agent.X-ray diffraction（XRD）,scanning electron microscope（SEM）,electrochemical performance tests were employed to investigate the effect of Mg doping on Li3V2（PO4）3/C samples.The results showed that a proper quantity of Mg doping was beneficial to the reduction of charge transfer resistance of Li3V2（PO4）3/C compound without changing the lattice structure,which led to larger charge/discharge capacity and better cycle performance especially at high current density.Li3Mg（2x）V（2-2x）（PO4）3/C sample with x=0.05 exhibited a better performance with initial charge/discharge capacity of146/128 mA·h/g and discharge capacity of 115 mA·h/g at 5C,while these two figures were 142/118 mA·h/g and 90 mA·h/g respectively for samples without Mg doping,indicating that a proper amount of doped Mg can improve the electrochemical performance of LVP sample.All of these proved that,as a trial Mg dopant,the synthesized MgNH4PO4/MgHPO4 compound exhibited well doping effect.展开更多
通过溶胶-凝胶法合成正极材料LiNi0.5Mn0.5O2,为了提高材料LiNi0.5Mn0.5O2的高倍率放电性能,采用Mg进行掺杂。通过X射线衍射(XRD),扫描电镜(SEM),恒电流充放电对材料的结构和形貌及电化学性能进行了研究。结果表明少量Mg的掺杂未影响到L...通过溶胶-凝胶法合成正极材料LiNi0.5Mn0.5O2,为了提高材料LiNi0.5Mn0.5O2的高倍率放电性能,采用Mg进行掺杂。通过X射线衍射(XRD),扫描电镜(SEM),恒电流充放电对材料的结构和形貌及电化学性能进行了研究。结果表明少量Mg的掺杂未影响到LiNi0.5Mn0.5O2的晶体结构,但改善了其电化学性能,其中,当Mg的掺杂量为5%(摩尔分数)时,材料具有更好的电化学性能,4 C放电时,首次放电比容量达到118 m Ah/g,且循环性能良好。展开更多
基金Funded by the Scientific Research Fund of Hunan Education Department(10C0294)
文摘The layered LiNi0.6Co0.2-xMn0.2MgxO2 （x=0.00,0.03,0.05,0.07） cathode materials were prepared by a co-precipitation method.The properties of the Mg-doped LiNi0.6Co0.2Mn0.2O2 were investigated by X-ray diffraction （XRD）,scanning electron microscopy （SEM）,and electrochemical measurements.XRD studies showed that the Mg-doped LiNi0.6Co0.2Mn0.2O2 had the same layered structure as the undoped LiNi0.6Co0.2Mn0.2O2.The SEM images exhibited that the particle size of Mg-doped LiNi0.6Co0.2Mn0.2O2 was finer than that of the undoped LiNi0.6Co0.2 Mn0.2O2 and that the smallest particle size is only about 1μm.The Mg-doped LiNi0.6Co0.2Mn0.2O2 samples were investigated on the Li extraction/insertion performances through charge/discharge,cyclic voltammogram （CV）,and electrochemical impedance spectra（EIS）.The optimal doping content of Mg was that x= 0.03 in the LiNi0.6Co0.2-xMn0.2MgxO2 samples to achieve high discharge capacity and good cyclic stability.The electrode reaction reversibility and electronic conductivity was enhanced,and the charge transfer resistance was decreased through Mg-doping.The improved electrochemical performances of the Mg-doped LiNi0.6Co0.2Mn0.2O2 cathode materials are attributed to the addition of Mg 2＋ ion by stabilizing the layer structure.
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002)the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082)+1 种基金Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2)the China Postdoctoral Science Foundation (Grant No.2020M671441)。
文摘Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
基金Project(2014CB643405)supported by the National Basic Research Program of China
文摘Li3Mg（2x）V（2-2x）（PO4）3/C（x=0,0.05,0.1,0.2） composites were synthesized by carbothermic reduction,using a self-made MgNH4PO4/MgHPO4 compound as Mg-doping agent.X-ray diffraction（XRD）,scanning electron microscope（SEM）,electrochemical performance tests were employed to investigate the effect of Mg doping on Li3V2（PO4）3/C samples.The results showed that a proper quantity of Mg doping was beneficial to the reduction of charge transfer resistance of Li3V2（PO4）3/C compound without changing the lattice structure,which led to larger charge/discharge capacity and better cycle performance especially at high current density.Li3Mg（2x）V（2-2x）（PO4）3/C sample with x=0.05 exhibited a better performance with initial charge/discharge capacity of146/128 mA·h/g and discharge capacity of 115 mA·h/g at 5C,while these two figures were 142/118 mA·h/g and 90 mA·h/g respectively for samples without Mg doping,indicating that a proper amount of doped Mg can improve the electrochemical performance of LVP sample.All of these proved that,as a trial Mg dopant,the synthesized MgNH4PO4/MgHPO4 compound exhibited well doping effect.
文摘通过溶胶-凝胶法合成正极材料LiNi0.5Mn0.5O2,为了提高材料LiNi0.5Mn0.5O2的高倍率放电性能,采用Mg进行掺杂。通过X射线衍射(XRD),扫描电镜(SEM),恒电流充放电对材料的结构和形貌及电化学性能进行了研究。结果表明少量Mg的掺杂未影响到LiNi0.5Mn0.5O2的晶体结构,但改善了其电化学性能,其中,当Mg的掺杂量为5%(摩尔分数)时,材料具有更好的电化学性能,4 C放电时,首次放电比容量达到118 m Ah/g,且循环性能良好。
