A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the sys...A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.展开更多
La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were stud...La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.展开更多
The samples of La0.6Dy0.1Sr0.3MnO3/（Ag2O）x/2（x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, 0.20, 0.25, and 0.30） were prepared by using the solid-state reaction method.Their magnetic property, transport behavior, transp...The samples of La0.6Dy0.1Sr0.3MnO3/（Ag2O）x/2（x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, 0.20, 0.25, and 0.30） were prepared by using the solid-state reaction method.Their magnetic property, transport behavior, transport mechanism and magnetoresistance effect were studied through the measurements of magnetization-temperature（M-T） curves, ρ-T curves and the fitting of ρ-T curves.The results indicated that Ag could take part in the reaction when the doping amount is small.However, when the doping amount is comparatively large, Ag as metallic state mainly deposits on the grain boundary of La0.6Dy0.1Sr0.3MnO3, and then the system forms a two-phase composite.When the Ag doping amount is 30% mole ratio, the resistivity of the sample is one order of magnitude smaller than that of low doped samples, and its peak of magnetoresistance at 292 K and in the magnetic field of 0.2 T strengthens apparently and reaches 16.3%, which is over 7 times as large as 2.2% of La0.6Dy0.1Sr0.3MnO3.The two-phase composite system of magnetoresistance based on perovskite manganite consists of two parts：intrinsic magnetoresistance and extrinsic magnetoresistance.However, extrinsic magnetoresistance comes from spin-dependent scattering（SDS） and spin-polarized tunneling（SPT）.Magnetoresistance near TC increases due to the contribution of intrinsic magnetoresistance and extrinsic magnetoresistance formed by SDS, and magnetoresistance at low temperature is extrinsic magnetoresistance formed by SPT.展开更多
Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers....Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt（5.0 nm）/[Co（0.4 nm）/Pt（0.6 nm）]3/Co（0.4 nm）/Cu（3.0 nm）and Cu（3.0 nm）/[Co（0.4 nm）/Pt（1.5 nm）]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity（HC） of both layers. The perpendicular giant magnetoresistance（GMR） of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.展开更多
A series of La0.7-xSmxSr0.3MnO3, La0.7-xGdxSr0.3MnO3, and La0.7-xDyxSr0.3MnO3 （x=0.00, 0.10, 0.20, 0.30） samples were prepared by the solid-state reaction method. The influence of the substitution of Sm, Gd, and Dy ...A series of La0.7-xSmxSr0.3MnO3, La0.7-xGdxSr0.3MnO3, and La0.7-xDyxSr0.3MnO3 （x=0.00, 0.10, 0.20, 0.30） samples were prepared by the solid-state reaction method. The influence of the substitution of Sm, Gd, and Dy for La on the magnetic and electric properties and on the magnetoresistance （MR） was studied through measurements of M-T curves and p-T curves. The results showed that： lattice distortion induced by substitution of Sm, Gd, and Dy for La and extra magnetism of substitution had great influence on the magnetic and electric properties of pcrovskite manganites; substitution of magnetic rare earth element for La was an effective way to change Curie temperature and to strengthen MR in perovskite manganites; and appropriate substitution proportion would generate large MR near room temperature.展开更多
A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6D...A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.展开更多
Topological semimetals are three-dimensional topological states of matter, in which the conduction and valence bands touch at a finite number of points, i.e., the Weyl nodes. Topological semimetals host paired monopol...Topological semimetals are three-dimensional topological states of matter, in which the conduction and valence bands touch at a finite number of points, i.e., the Weyl nodes. Topological semimetals host paired monopoles and antimonopoles of Berry curvature at the Weyl nodes and topologically protected Fermi arcs at certain surfaces. We review our recent works on quantum transport in topo- logical semimetals, according to the strength of the magnetic field. At weak magnetic fields, there are competitions between the positive magnetoresistivity induced by the weak anti-localization effect and negative magnetoresistivity related to the nontrivial Berry curvature. We propose a fitting formula for the magnetoconductivity of the weak anti-localization. We expect that the weak localization may be induced by inter-valley effects and interaction effect, and occur in double-Weyl semimetals. For the negative magnetoresistance induced by the nontrivial Berry curvature in topological semimetals, we show the dependence of the negative magnetoresistance on the carrier density. At strong magnetic fields, specifically, in the quantum limit, the magnetoconductivity depends on the type and range of the scattering potential of disorder. The high-field positive magnetoconductivity nmy not be a com- pelling signature of the chiral anomaly. For long-range Gaussian scattering potential and half filling, the magnetoconductivity can be linear in the quantum limit. A minimal conductivity is found at the Weyl nodes although the density of states vanishes there.展开更多
Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultra...Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.展开更多
基金supported by the National Natural Foundation of China (No. 19934003)the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259)+2 种基金the Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research Program(No. 2010YKF01No. 2010YKF04)the Professors’ and Doctors’ Research Startup Foundation of Suzhou University (Nos. 2011jb01 and 2011jb02)
文摘A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.
基金supported by the Key Program of the National Natural Science Foundation of China (No. 19934003)the Grand Program of Natural Science Research of Anhui Education Department (No. ZD2007003-1)the Natural Science Research Program of Universities and Colleges of Anhui Province, China (Nos. KJ2008A19ZC, KJ2009B281Z, and KJ2009A053Z)
文摘La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.
基金supported by the Key Program of the National Natural Science Foundation of China (No. 19934003)the Grand Program of Natural Science Research of Anhui Education Department (No. ZD2007003-1)+1 种基金the Natural Science Research Program of Universities and Colleges of Anhui Province, China (No. KJ2008A34ZC No. KJ2009A053Z)
文摘The samples of La0.6Dy0.1Sr0.3MnO3/（Ag2O）x/2（x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, 0.20, 0.25, and 0.30） were prepared by using the solid-state reaction method.Their magnetic property, transport behavior, transport mechanism and magnetoresistance effect were studied through the measurements of magnetization-temperature（M-T） curves, ρ-T curves and the fitting of ρ-T curves.The results indicated that Ag could take part in the reaction when the doping amount is small.However, when the doping amount is comparatively large, Ag as metallic state mainly deposits on the grain boundary of La0.6Dy0.1Sr0.3MnO3, and then the system forms a two-phase composite.When the Ag doping amount is 30% mole ratio, the resistivity of the sample is one order of magnitude smaller than that of low doped samples, and its peak of magnetoresistance at 292 K and in the magnetic field of 0.2 T strengthens apparently and reaches 16.3%, which is over 7 times as large as 2.2% of La0.6Dy0.1Sr0.3MnO3.The two-phase composite system of magnetoresistance based on perovskite manganite consists of two parts：intrinsic magnetoresistance and extrinsic magnetoresistance.However, extrinsic magnetoresistance comes from spin-dependent scattering（SDS） and spin-polarized tunneling（SPT）.Magnetoresistance near TC increases due to the contribution of intrinsic magnetoresistance and extrinsic magnetoresistance formed by SDS, and magnetoresistance at low temperature is extrinsic magnetoresistance formed by SPT.
基金financially supported by the National Natural Science Foundation of China (Nos. 11174020, 51331002, and 51371027)the Fundamental Research Funds for the Central Universities FRF-SD-12-011A
文摘Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt（5.0 nm）/[Co（0.4 nm）/Pt（0.6 nm）]3/Co（0.4 nm）/Cu（3.0 nm）and Cu（3.0 nm）/[Co（0.4 nm）/Pt（1.5 nm）]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity（HC） of both layers. The perpendicular giant magnetoresistance（GMR） of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.
基金supported by the Key Programme of the National Natural Science Foundation of China (19934003)the Grand Programme of the Natu-ral Science Research of Education Bureau of Anhui Province (ZD2007003-1)+1 种基金 Natural Science Research Programme of Colleges and Universi-ties of Anhui Province (KJ2008A19ZC) Professors’ and Doctors’ Research Foundation of Suzhou College (2006jb02)
文摘A series of La0.7-xSmxSr0.3MnO3, La0.7-xGdxSr0.3MnO3, and La0.7-xDyxSr0.3MnO3 （x=0.00, 0.10, 0.20, 0.30） samples were prepared by the solid-state reaction method. The influence of the substitution of Sm, Gd, and Dy for La on the magnetic and electric properties and on the magnetoresistance （MR） was studied through measurements of M-T curves and p-T curves. The results showed that： lattice distortion induced by substitution of Sm, Gd, and Dy for La and extra magnetism of substitution had great influence on the magnetic and electric properties of pcrovskite manganites; substitution of magnetic rare earth element for La was an effective way to change Curie temperature and to strengthen MR in perovskite manganites; and appropriate substitution proportion would generate large MR near room temperature.
基金supported by the National Natural Foundation of China (No. 19934003) the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259)+3 种基金the Opening Program of Cultivating Base of Anhui Key Laboratory of Spintronics and Nanomaterials (Nos. 2010YKF04 2011YKF05)the Professors’and Doctors’Research Startup Foundation of Suzhou University (Nos. 2011jb01 2011jb02)
文摘A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.
文摘Topological semimetals are three-dimensional topological states of matter, in which the conduction and valence bands touch at a finite number of points, i.e., the Weyl nodes. Topological semimetals host paired monopoles and antimonopoles of Berry curvature at the Weyl nodes and topologically protected Fermi arcs at certain surfaces. We review our recent works on quantum transport in topo- logical semimetals, according to the strength of the magnetic field. At weak magnetic fields, there are competitions between the positive magnetoresistivity induced by the weak anti-localization effect and negative magnetoresistivity related to the nontrivial Berry curvature. We propose a fitting formula for the magnetoconductivity of the weak anti-localization. We expect that the weak localization may be induced by inter-valley effects and interaction effect, and occur in double-Weyl semimetals. For the negative magnetoresistance induced by the nontrivial Berry curvature in topological semimetals, we show the dependence of the negative magnetoresistance on the carrier density. At strong magnetic fields, specifically, in the quantum limit, the magnetoconductivity depends on the type and range of the scattering potential of disorder. The high-field positive magnetoconductivity nmy not be a com- pelling signature of the chiral anomaly. For long-range Gaussian scattering potential and half filling, the magnetoconductivity can be linear in the quantum limit. A minimal conductivity is found at the Weyl nodes although the density of states vanishes there.
基金supported by the National Science Foundation of China (Nos.50671008,50871014,and 50831002)
文摘Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.
