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Observation of coupling between zero- and two- dimensional semiconductor systems based on anomalous diamagnetic effects 被引量:2
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作者 Shuo Cao Jing Tang +13 位作者 Yue Sun Kai Peng Yunan Gao Yanhui Zhao Chenjiang Qian Sibai Sun Hassan Ali Yuting Shao Shiyao Wu Feilong Song David A. Williams Weidong Sheng Kuijuan Jin Xiulai Xu 《Nano Research》 SCIE EI CAS CSCD 2016年第2期306-316,共11页
We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectro... We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing. 展开更多
关键词 magneto-photoluminescence InAs quantum dots wetting layer strong diamagnetic effects
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Magneto-optical properties of self-assembled InAs quantum dots for quantum information processing 被引量:1
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作者 唐静 许秀来 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期195-203,共9页
Semiconductor quantum dots have been intensively investigated because of their fundamental role in solid-state quan- tum information processing. The energy levels of quantum dots are quantized and can be tuned by exte... Semiconductor quantum dots have been intensively investigated because of their fundamental role in solid-state quan- tum information processing. The energy levels of quantum dots are quantized and can be tuned by external field such as optical, electric, and magnetic field. In this review, we focus on the development of magneto-optical properties of single InAs quantum dots embedded in GaAs matrix, including charge injection, relaxation, tunneling, wavefunction distribution, and coupling between different dimensional materials. Finally, the perspective of coherent manipulation of quantum state of single self-assembled quantum dots by photocurrent spectroscopy with an applied magnetic field is discussed. 展开更多
关键词 magneto-photoluminescence InAs quantum dots quantum bit wavefunction control diamag-netic effects
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红荧烯共混器件中光致发光及光电流的磁效应研究
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作者 王影 汤仙童 +4 位作者 马彩虹 叶晟楠 赵茜 朱洪强 熊祖洪 《中国科学:信息科学》 CSCD 北大核心 2020年第11期1756-1766,共11页
为了研究红荧烯共混体系中激子的反应过程,本文制备了一系列rubrene与3TPYMB共混的有机光电器件,并测量了不同比例的共混器件在不同温度和外加偏压条件下的光致发光和光电流的磁效应.实验发现,外加零偏压时,共混器件中光致发光磁效应(ma... 为了研究红荧烯共混体系中激子的反应过程,本文制备了一系列rubrene与3TPYMB共混的有机光电器件,并测量了不同比例的共混器件在不同温度和外加偏压条件下的光致发光和光电流的磁效应.实验发现,外加零偏压时,共混器件中光致发光磁效应(magneto-photoluminescence,MPL)在不同温度下均为类"W"线型,光电流的磁效应(magneto-photocurrent,MPC)则出现了没有报道过的类"M"线型,且MPC高场效应与低场效应随温度有不同的变化规律;同时,在外加偏压调控光电流为正的情况下,共混器件中的MPC幅值出现了正负转变.分析结果表明,器件中类"W"型曲线是受磁场调控的单重态激子分裂(singletfission,STT)过程引起的,而类"M"型MPC的低场上升部分是3TPYMB分子中极化子对间的系间窜越(intersystem crossing,ISC)过程的作用,高场下降部分则是由三重态激子–电荷湮灭(triplet-charge annihilation,TQA)过程所引起,MPC幅值的正负转变与外加偏压强度有关.本工作不仅有利于深入认识光电器件中光致发光与光电流的微观机制,而且为进一步优化红荧烯器件的光电性能提供了参考. 展开更多
关键词 红荧烯 光致发光磁效应 光电流磁效应 单重态激子裂变 三重态激子–电荷湮灭
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磁光-光致发光分析CdZnTe单晶带边浅杂质能级
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作者 祁镇 盛锋锋 +3 位作者 朱亮 杨建荣 陈熙仁 邵军 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2017年第5期589-593,共5页
通过对Bridgeman方法生长的CdZnTe单晶样品进行光致发光(Photoluminescence,PL)光谱测量,发现CdZnTe样品表面Te沉淀物的存在明显影响能量低于1.5 eV的深能级发光过程.进一步对CdZnTe晶锭的不同位置取样进行低温变磁场光致发光光谱测试,... 通过对Bridgeman方法生长的CdZnTe单晶样品进行光致发光(Photoluminescence,PL)光谱测量,发现CdZnTe样品表面Te沉淀物的存在明显影响能量低于1.5 eV的深能级发光过程.进一步对CdZnTe晶锭的不同位置取样进行低温变磁场光致发光光谱测试,获得高分辨光谱信息.拟合分析结果表明:(1)在不含Te沉淀物的CdZnTe样品内部存在应力分布,并因此导致轻、重空穴带分裂;(2)1.57 eV发光特征源于浅施主杂质与价带间的复合过程. 展开更多
关键词 CdZnTe单晶 磁光光致发光光谱 应力 轻空穴
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