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Measurement of the remnant magnetic-field in Lorentz mode using permalloy
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作者 Haihua LIU Xiaokun DUAN +2 位作者 Renchao CHE Zhifeng WANG Xiaofeng DUAN 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2009年第6期435-439,共5页
A novel method was reported to measure the remnant magnetic field in Lorentz mode in a FEI Tecnai F20 transmission electron microscope equipped with a Lorentz lens. The movement of the circle Bloch line of the cross-t... A novel method was reported to measure the remnant magnetic field in Lorentz mode in a FEI Tecnai F20 transmission electron microscope equipped with a Lorentz lens. The movement of the circle Bloch line of the cross-tie wall in Permalloy is used to measure the remnant magnetic field by tilting the specimen and adjusting the objective lens current. The remnant magnetic field is estimated to be about 17 Oe, in a direction opposite to that of the objective lens magnetic field. The remnant magnetic field can be compensated by adjusting the value of the objective lens current. 展开更多
关键词 lorentz electron microscopy lorentz lens Remnant magneticfield PERMALLOY Cross-tie walls
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磁畴壁拓扑结构研究进展
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作者 张颖 李卓霖 沈保根 《物理学报》 SCIE EI CAS CSCD 北大核心 2024年第1期57-68,共12页
拓扑磁性斯格明子作为信息载体单元具备高可靠性、高集成度、低能耗等优势,有望提高数据读写精度、降低功耗,从而研发新型拓扑自旋电子学材料与原理型器件,为信息技术、5G通信和大数据等的高速发展提供材料与技术支持.但磁性斯格明子同... 拓扑磁性斯格明子作为信息载体单元具备高可靠性、高集成度、低能耗等优势,有望提高数据读写精度、降低功耗,从而研发新型拓扑自旋电子学材料与原理型器件,为信息技术、5G通信和大数据等的高速发展提供材料与技术支持.但磁性斯格明子同时存在需要磁场稳定以及电流驱动下斯格明子霍尔效应引起偏转等缺点,严重阻碍了其在实际器件中的应用,因此探索新型拓扑磁畴结构和适宜应用的材料体系成为研究的关键.本文将重点介绍自2013年理论预言磁畴壁斯格明子以来,利用高分辨率洛伦兹透射电子显微镜原位实空间发现并研究磁畴壁拓扑麦纫和磁畴壁斯格明子的实验工作.首次在范德瓦耳斯Fe_(5–x)GeTe_(2)二维磁性材料中发现温度诱发的180°磁畴壁转变为拓扑麦韧链,研究了磁畴壁麦纫态在外界电场、磁场作用下的集体运动行为,揭示了基于自旋重取向、磁畴壁限域效应以及弱相互作用下生成磁畴壁拓扑态的机制.在该机制指导下,设计制备了具有自旋重取向的GdFeCo非晶亚铁磁薄膜,不仅获得了磁畴壁麦纫,验证了生成机制的普适性,还成功实现了畴壁麦韧对到畴壁斯格明子的可逆拓扑转变,开辟了基于磁畴壁等内禀限域效应开展拓扑磁性物态探索和研究的新方向. 展开更多
关键词 磁畴壁麦纫 磁畴壁斯格明子 自旋重取向 洛伦兹透射电子显微镜 二维磁性材料
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利用自制可加磁场样品台对链状位移型磁畴壁的原位洛伦兹电子显微术研究 被引量:4
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作者 刘海华 车仁超 +1 位作者 王志峰 段晓峰 《电子显微学报》 CAS CSCD 北大核心 2011年第2期97-101,共5页
利用自制的可加磁场样品台,结合离焦洛仑兹电子显微术,原位研究了坡莫合金中的一种链状位移型磁畴壁在磁化和反磁化过程中的变化,并据此提出了相应的样品薄膜面内的磁力线分布模型。
关键词 原位洛仑兹电子显微术 链状位移型畴壁 磁畴 坡莫合金
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Investigation of magnetization reversal process in pinned CoFeB thin film by in-situ Lorentz TEM
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作者 Ke Pei Wei-Xing Xia +5 位作者 Bao-Min Wang Xing-Cheng Wen Ping Sheng Jia-Ping Liu Xin-Cai Liu Run-Wei Li 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第4期465-471,共7页
Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due ... Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems. 展开更多
关键词 exchange bias magnetization reversal process lorentz transmission electron microscopy pinning effect distribution
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