A new explanation of quaternary Q gate expression in Post algebra is given in this paper by using transmission function theory proposed in [1] and the quaternary ECL Q gate circuit is de- signed.The SPICE2 simulation ...A new explanation of quaternary Q gate expression in Post algebra is given in this paper by using transmission function theory proposed in [1] and the quaternary ECL Q gate circuit is de- signed.The SPICE2 simulation to this circuit has confirmed that it has desired logical function and is totally compatible with various quaternary ECL circuits proposed before.展开更多
In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved ...In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge;Sb;Te;phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.展开更多
基金The subject is supported by Zhejiang Provincial Natural Science Foundation.
文摘A new explanation of quaternary Q gate expression in Post algebra is given in this paper by using transmission function theory proposed in [1] and the quaternary ECL Q gate circuit is de- signed.The SPICE2 simulation to this circuit has confirmed that it has desired logical function and is totally compatible with various quaternary ECL circuits proposed before.
基金partially supported by the National Natural Science Foundation of China(Nos.61178059,51472258,and 61137002)the National Basic Research Program of China(No.2013CBA01900)
文摘In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge;Sb;Te;phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.
