Since 1935, cell. membranes or plasma membranes have been recognized to contain a continuously self-enclosed two-dimensional structure with a thickness equal to the dimension of two lipid molecules. With the foundatio...Since 1935, cell. membranes or plasma membranes have been recognized to contain a continuously self-enclosed two-dimensional structure with a thickness equal to the dimension of two lipid molecules. With the foundation of the fluid mosaic model of membranes in 1972 and the research of lipid polymorphism, some basic structures of biological membranes have been clarified. Recently, two broad categories of bilayers have been recog-展开更多
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighb...High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.展开更多
文摘Since 1935, cell. membranes or plasma membranes have been recognized to contain a continuously self-enclosed two-dimensional structure with a thickness equal to the dimension of two lipid molecules. With the foundation of the fluid mosaic model of membranes in 1972 and the research of lipid polymorphism, some basic structures of biological membranes have been clarified. Recently, two broad categories of bilayers have been recog-
基金supported by the National Key Research and Development Program of China(Grant No.2016YFA02005003)the National Natural Science Foundation of China(Grant Nos.61376096 and 61327813)
文摘High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.
