In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theore...In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.展开更多
GIS中盘式绝缘子的电气性能是设计者关注的重点,盘式绝缘子在制造的过程中,由于浇注工艺的原因会在金属法兰处留有一椭圆切面的浇注孔,内部填充环氧树脂,在环氧树脂和金属法兰交界处会产生一定的电场畸变。主要研究金属法兰开孔尺寸大...GIS中盘式绝缘子的电气性能是设计者关注的重点,盘式绝缘子在制造的过程中,由于浇注工艺的原因会在金属法兰处留有一椭圆切面的浇注孔,内部填充环氧树脂,在环氧树脂和金属法兰交界处会产生一定的电场畸变。主要研究金属法兰开孔尺寸大小和结构对盆式绝缘子表面和浇注孔表面电场强度的影响。研究表明:大尺寸浇注孔表面的场强最大值为0.85 k V/mm,要高于小尺寸浇注孔表面电场强度最大值0.38 kV/mm。说明开孔越小,浇注孔表面电场强度最大值越小,在满足测量要求情况下,开孔越小越好。展开更多
基金the General Program of Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475)the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-70)。
文摘In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.
文摘GIS中盘式绝缘子的电气性能是设计者关注的重点,盘式绝缘子在制造的过程中,由于浇注工艺的原因会在金属法兰处留有一椭圆切面的浇注孔,内部填充环氧树脂,在环氧树脂和金属法兰交界处会产生一定的电场畸变。主要研究金属法兰开孔尺寸大小和结构对盆式绝缘子表面和浇注孔表面电场强度的影响。研究表明:大尺寸浇注孔表面的场强最大值为0.85 k V/mm,要高于小尺寸浇注孔表面电场强度最大值0.38 kV/mm。说明开孔越小,浇注孔表面电场强度最大值越小,在满足测量要求情况下,开孔越小越好。
