Aluminum-doped zinc oxide （ZnO：AI） films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temper- ature. The influences of hydrogen content in sputtering gas...Aluminum-doped zinc oxide （ZnO：AI） films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temper- ature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO：A1 films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO：A1 films and plays an important role in the properties of ZnO：A1 films. The electrical conductivity and infrared （IR） reflectance are improved due to the increase of electron carrier concentration, and the average trans- mittance decreases, which is ascribed to the strong scat- tering from the hydrogen incorporated and oxygen vacancies in ZnO：A1 films. In this study, the resistivity of 5.5 × 10-4 Ω.cm is obtained, the average transmittance of the wavelength in the range of 400-900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of com- petition between Burstein-Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.展开更多
以P型(100)取向的单晶硅片为衬底,采用微波等离子体化学气相沉积(MPCVD)法,通过在反应气源中添加不同比例的CO2制备光学级金刚石膜。通过Raman光谱、X射线衍射(XRD)和扫描电子显微镜(SEM)表征金刚石膜的结晶质量、晶粒取向和表面形貌。...以P型(100)取向的单晶硅片为衬底,采用微波等离子体化学气相沉积(MPCVD)法,通过在反应气源中添加不同比例的CO2制备光学级金刚石膜。通过Raman光谱、X射线衍射(XRD)和扫描电子显微镜(SEM)表征金刚石膜的结晶质量、晶粒取向和表面形貌。结果表明:增加反应气源中CO2/CH4流量比,在不改变金刚石膜物相纯度的情况下,有利于提高金刚石薄膜的结晶质量;适量的CO2/CH4流量比有利于获得晶粒形貌规则、完整且尺寸均匀的高[111]取向的金刚石膜。傅里叶变换红外光谱(FT-IR)(红外光透过率)测试发现晶界密度小、晶粒尺寸均匀、形貌规则且表面平整的自支撑金刚石膜具有更高的红外(IR)透过率,表明在反应气源中适量地引入CO2有利于提高金刚石膜的光学性能,这可能与CO2引入后产生的含氧基团能抑制非金刚石相,促进取向金刚石相的生长有关;在微波功率6 k W、气压13 k Pa、基片温度850℃、CH4流量为15 ml·min-1(标准状况)的条件下,CO2/CH4流量比为0.45时可制备出具有高质量和高红外透过率的金刚石光学膜。展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.21101151 and 51272250)
文摘Aluminum-doped zinc oxide （ZnO：AI） films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temper- ature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO：A1 films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO：A1 films and plays an important role in the properties of ZnO：A1 films. The electrical conductivity and infrared （IR） reflectance are improved due to the increase of electron carrier concentration, and the average trans- mittance decreases, which is ascribed to the strong scat- tering from the hydrogen incorporated and oxygen vacancies in ZnO：A1 films. In this study, the resistivity of 5.5 × 10-4 Ω.cm is obtained, the average transmittance of the wavelength in the range of 400-900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of com- petition between Burstein-Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.
文摘以P型(100)取向的单晶硅片为衬底,采用微波等离子体化学气相沉积(MPCVD)法,通过在反应气源中添加不同比例的CO2制备光学级金刚石膜。通过Raman光谱、X射线衍射(XRD)和扫描电子显微镜(SEM)表征金刚石膜的结晶质量、晶粒取向和表面形貌。结果表明:增加反应气源中CO2/CH4流量比,在不改变金刚石膜物相纯度的情况下,有利于提高金刚石薄膜的结晶质量;适量的CO2/CH4流量比有利于获得晶粒形貌规则、完整且尺寸均匀的高[111]取向的金刚石膜。傅里叶变换红外光谱(FT-IR)(红外光透过率)测试发现晶界密度小、晶粒尺寸均匀、形貌规则且表面平整的自支撑金刚石膜具有更高的红外(IR)透过率,表明在反应气源中适量地引入CO2有利于提高金刚石膜的光学性能,这可能与CO2引入后产生的含氧基团能抑制非金刚石相,促进取向金刚石相的生长有关;在微波功率6 k W、气压13 k Pa、基片温度850℃、CH4流量为15 ml·min-1(标准状况)的条件下,CO2/CH4流量比为0.45时可制备出具有高质量和高红外透过率的金刚石光学膜。
