The crystal structure, band structure, density of states, Mulliken charge, bond population and optical properties for LiBi_（1-x）M_xO_3（M=V, Nb, and Ta） were investigated using hybrid density functional theory. It ...The crystal structure, band structure, density of states, Mulliken charge, bond population and optical properties for LiBi_（1-x）M_xO_3（M=V, Nb, and Ta） were investigated using hybrid density functional theory. It was found that LiBiO_3 doped with V, Nb, and Ta presented distinctly stronger covalent interactions in M-O（M=V, Nb, and Ta） than Bi-O, thus resulting in mild distortion of the structure and facilitating the separation of photogenerated carriers. Furthermore, the hybridizations of Bi-6s, M-d（M=V, Nb, and Ta） and O-2p widened the valence and conduction bands, which promoted transmission of photogenerated carriers in the band edge and thus caused better photocatalytic performance.展开更多
Using first-principles calculations, we investigate the two-dimensional arsenic nanosheet isolated from bulk gray arsenic. Its dynamical stability is confirmed by phonon calculations and molecular dynamics analyzing. ...Using first-principles calculations, we investigate the two-dimensional arsenic nanosheet isolated from bulk gray arsenic. Its dynamical stability is confirmed by phonon calculations and molecular dynamics analyzing. The arsenic sheet is an indirect band gap semiconductor with a band gap of 2.21 e V in the hybrid HSE06 functional calculations. The valence band maximum（VBM） and the conduction band minimum（CBM） are mainly occupied by the 4p orbitals of arsenic atoms,which is consistent with the partial charge densities of VBM and CBM. The charge density of the VBM G point has the character of a π bond, which originates from p orbitals. Furthermore, tensile and compressive strains are applied in the armchair and zigzag directions, related to the tensile deformations of zigzag and armchair nanotubes, respectively. We find that the ultimate strain in zigzag deformation is 0.13, smaller than 0.18 of armchair deformation. The limit compressive stresses of single-layer arsenic along armchair and zigzag directions are-4.83 GPa and-4.76 GPa with corresponding strains of-0.15 and-0.14, respectively.展开更多
基金the National Natural Science Foundation of China(No.61275108)the Natural Science Foundation of Zhejiang province in China(Nos.LY15F050009 and Y111049)
文摘The crystal structure, band structure, density of states, Mulliken charge, bond population and optical properties for LiBi_（1-x）M_xO_3（M=V, Nb, and Ta） were investigated using hybrid density functional theory. It was found that LiBiO_3 doped with V, Nb, and Ta presented distinctly stronger covalent interactions in M-O（M=V, Nb, and Ta） than Bi-O, thus resulting in mild distortion of the structure and facilitating the separation of photogenerated carriers. Furthermore, the hybridizations of Bi-6s, M-d（M=V, Nb, and Ta） and O-2p widened the valence and conduction bands, which promoted transmission of photogenerated carriers in the band edge and thus caused better photocatalytic performance.
基金supported by the Henan Joint Funds of the National Natural Science Foundation of China(Grant Nos.U1304612 and U1404608)the National Natural Science Foundation of China(Grant Nos.51374132 and 11404175)+1 种基金the Special Fund for Theoretical Physics of China(Grant No.11247222)Nanyang Normal University Science Foundation,China(Grant Nos.ZX2012018 and ZX2013019)
文摘Using first-principles calculations, we investigate the two-dimensional arsenic nanosheet isolated from bulk gray arsenic. Its dynamical stability is confirmed by phonon calculations and molecular dynamics analyzing. The arsenic sheet is an indirect band gap semiconductor with a band gap of 2.21 e V in the hybrid HSE06 functional calculations. The valence band maximum（VBM） and the conduction band minimum（CBM） are mainly occupied by the 4p orbitals of arsenic atoms,which is consistent with the partial charge densities of VBM and CBM. The charge density of the VBM G point has the character of a π bond, which originates from p orbitals. Furthermore, tensile and compressive strains are applied in the armchair and zigzag directions, related to the tensile deformations of zigzag and armchair nanotubes, respectively. We find that the ultimate strain in zigzag deformation is 0.13, smaller than 0.18 of armchair deformation. The limit compressive stresses of single-layer arsenic along armchair and zigzag directions are-4.83 GPa and-4.76 GPa with corresponding strains of-0.15 and-0.14, respectively.
