In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates a...In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates at room temperature. The electrical conductivity of the films was investigated in the temperature range of 15-500 K. The conductivity data in the temperature range of 400-500 K show the extended state conduction mecha- nism, while the multiphonon hopping （MPH） conduction is found to dominate the electrical transport in the tempera- ture range of 150-300 K. The films deposited at 180 s have the maximum conductivity. The conductivity at T 〈 60 K could be described in terms of variable range hopping （VRH） conduction. The localized state density around Fermi level （N（EF）） at low temperature for the films deposited at 180 s has the minimum value of about 4.02 × 10^21 cm^-3.eV^-1. The average hopping distance （Rhop） for the films deposited at 180 s has the maximum value of about 3.51 × 10^-7 cm.展开更多
Local inhomogeneity in totally asymmetric simple exclusion processes （TASEPs） with different hopping rates was studied. Many biological and chemical phenomena can be described by these non-equilibrium processes. A s...Local inhomogeneity in totally asymmetric simple exclusion processes （TASEPs） with different hopping rates was studied. Many biological and chemical phenomena can be described by these non-equilibrium processes. A simple approximate theory and extensive Monte Carlo computer simulations were used to calculate the steady-state phase diagrams and bulk densities. It is found that the phase diagram for local inhomogeneity in TASEP with different hopping rates p is qualitatively similar to homogeneous models. Interestingly, there is a saturation point pair （a＊, fl＊） for the system, which is decided by parameters p and q. There are three stationary phases in the system, when parameter p is fixed （i.e., p=0.8）, with the increase of the parameter q, the region of LD/LD and HD/HD phase increases and the HD/LD is the only phase which the region shrinks. The analytical results are in good agreement with simulations.展开更多
This paper shows that exact calculation for transition probability can make some systems deviate fromFermi golden rule seriously. This paper also shows that the corresponding exact calculation of hopping rate inducedb...This paper shows that exact calculation for transition probability can make some systems deviate fromFermi golden rule seriously. This paper also shows that the corresponding exact calculation of hopping rate inducedby phonons for deuteron in Pd-D system with the many-body electron screening, proposed by Ichimaru, can explainthe experimental fact observed in Pd-D system, and predicts that perfection and low-dimension of Pd lattice are veryimportant for the phonon-induced hopping rate enhancement in Pd-D system.展开更多
常规慢速频移键控跳频（frequency-hopping/frequency-shift-keying,FH/FSK）受跟踪干扰威胁严重;差分跳频抗跟踪干扰能力强,但部分频带干扰下误码率高。为提高常规慢速跳频抗跟踪干扰性能,同时不损失抗部分频带干扰性能,提出的多序列...常规慢速频移键控跳频（frequency-hopping/frequency-shift-keying,FH/FSK）受跟踪干扰威胁严重;差分跳频抗跟踪干扰能力强,但部分频带干扰下误码率高。为提高常规慢速跳频抗跟踪干扰性能,同时不损失抗部分频带干扰性能,提出的多序列跳频（multi-sequence frequency hopping,MSFH）无线通信方式中,数据信道和补偿信道频率分别按不同跳频序列跳变,使干扰方无法准确跟踪补偿信道,减少了跟踪干扰影响;而接收机射频前端采用窄带接收,与差分跳频的宽带接收相比可有效抑制部分频带干扰。在瑞利衰落信道下,分析了卷积编码MSFH抗干扰性能。数值和仿真表明,在最坏跟踪干扰下MSFH比常规跳频约有5~10dB误码率性能增益,且抗部分频带干扰性能优于差分跳频。展开更多
文摘In this work, the electrical properties of car- bon-nickel composite films deposited at different time （50-600 s） were investigated. The films were grown by radio frequency magnetron sputtering on glass substrates at room temperature. The electrical conductivity of the films was investigated in the temperature range of 15-500 K. The conductivity data in the temperature range of 400-500 K show the extended state conduction mecha- nism, while the multiphonon hopping （MPH） conduction is found to dominate the electrical transport in the tempera- ture range of 150-300 K. The films deposited at 180 s have the maximum conductivity. The conductivity at T 〈 60 K could be described in terms of variable range hopping （VRH） conduction. The localized state density around Fermi level （N（EF）） at low temperature for the films deposited at 180 s has the minimum value of about 4.02 × 10^21 cm^-3.eV^-1. The average hopping distance （Rhop） for the films deposited at 180 s has the maximum value of about 3.51 × 10^-7 cm.
基金Project(2011FZ050) supported by Applied Basic Research Program of Yunnan Provincial Science and Technology Department,ChinaProject(2011J084) supported by Master Program of Yunnan Province Education Department,China
文摘Local inhomogeneity in totally asymmetric simple exclusion processes （TASEPs） with different hopping rates was studied. Many biological and chemical phenomena can be described by these non-equilibrium processes. A simple approximate theory and extensive Monte Carlo computer simulations were used to calculate the steady-state phase diagrams and bulk densities. It is found that the phase diagram for local inhomogeneity in TASEP with different hopping rates p is qualitatively similar to homogeneous models. Interestingly, there is a saturation point pair （a＊, fl＊） for the system, which is decided by parameters p and q. There are three stationary phases in the system, when parameter p is fixed （i.e., p=0.8）, with the increase of the parameter q, the region of LD/LD and HD/HD phase increases and the HD/LD is the only phase which the region shrinks. The analytical results are in good agreement with simulations.
文摘This paper shows that exact calculation for transition probability can make some systems deviate fromFermi golden rule seriously. This paper also shows that the corresponding exact calculation of hopping rate inducedby phonons for deuteron in Pd-D system with the many-body electron screening, proposed by Ichimaru, can explainthe experimental fact observed in Pd-D system, and predicts that perfection and low-dimension of Pd lattice are veryimportant for the phonon-induced hopping rate enhancement in Pd-D system.
文摘常规慢速频移键控跳频（frequency-hopping/frequency-shift-keying,FH/FSK）受跟踪干扰威胁严重;差分跳频抗跟踪干扰能力强,但部分频带干扰下误码率高。为提高常规慢速跳频抗跟踪干扰性能,同时不损失抗部分频带干扰性能,提出的多序列跳频（multi-sequence frequency hopping,MSFH）无线通信方式中,数据信道和补偿信道频率分别按不同跳频序列跳变,使干扰方无法准确跟踪补偿信道,减少了跟踪干扰影响;而接收机射频前端采用窄带接收,与差分跳频的宽带接收相比可有效抑制部分频带干扰。在瑞利衰落信道下,分析了卷积编码MSFH抗干扰性能。数值和仿真表明,在最坏跟踪干扰下MSFH比常规跳频约有5~10dB误码率性能增益,且抗部分频带干扰性能优于差分跳频。
