Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially ...Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.展开更多
锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角...锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角在8~12μm长波红外波段对反射率的影响,确定了微结构在低反射情况下较优的结构参数组合,其在整个波段范围内的平均反射率低于1%,远低于平板锗结构的35.47%,在9~11μm的波段范围内反射率低于0.5%,且光波在40°范围内入射时,圆锥形微结构的平均反射率仍然较低。将优化的圆锥形微结构与平板结构进行了对比,从等效折射率、反射场分布和能量吸收分布3方面进一步证实了圆锥形微结构在整个波段范围内优异的减反射性能。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61704130)the Science Research Plan in Shaanxi Province,China(Grant No.2018JQ6064)the Science and Technology Project on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029).
文摘Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.
文摘锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角在8~12μm长波红外波段对反射率的影响,确定了微结构在低反射情况下较优的结构参数组合,其在整个波段范围内的平均反射率低于1%,远低于平板锗结构的35.47%,在9~11μm的波段范围内反射率低于0.5%,且光波在40°范围内入射时,圆锥形微结构的平均反射率仍然较低。将优化的圆锥形微结构与平板结构进行了对比,从等效折射率、反射场分布和能量吸收分布3方面进一步证实了圆锥形微结构在整个波段范围内优异的减反射性能。
