Ultrafast electromagnetic waves radiated from semiconductor material under high electric fields and photoexcited by femtosecond laser pulses have been recorded by using terahertz time domain spectroscopy （THz-TDS）.T...Ultrafast electromagnetic waves radiated from semiconductor material under high electric fields and photoexcited by femtosecond laser pulses have been recorded by using terahertz time domain spectroscopy （THz-TDS）.The waveforms of these electromagnetic waves reflect the dynamics of the photoexcited carriers in the semiconductor material,thus,THz-TDS provides a unique opportunity to observe directly the temporal and spatial evolutions of non-equilibrium transport of carriers within sub-picosecond time scale.We report on the observed THz emission waveforms emitted from GaAs by using a novel technology,the time domain THz electro-optic （EO） sampling,which has a bipolar feature,i.e.,an initial positive peak and a subsequent negative dip that arises from its velocity overshoot.The initial positive peak has been interpreted as electron acceleration in the bottom of Γ valley in GaAs,where electrons have a light effective mass.The subsequent negative dip has been attributed to intervalley transfer from Γ to X and L valleys.Furthermore,the power dissipation spectra of the bulk GaAs in THz range are also investigated by using the Fourier transformation of the time domain THz traces.From the power dissipation spectra,the cutoff frequency for negative power dissipation （i.e.,gain） under step electric field in the bulk GaAs can also be obtained.The cutoff frequency for the gain gradually increases with increasing electric fields up to 50 kV/cm and achieves saturation at approximately 1 THz at 300 K.Furthermore,based on the temperature dependence of the cutoff frequency,we find that this cutoff frequency is governed by the energy relaxation process of electrons from L to Γ valley via successive optical phonon emission.展开更多
GaAs nanocrystals were prepared via a simple mechanical ball milling technique. The prepared GaAs nanocrystals have high purity and could form colloidal ethanol suspension without any surfactant additives. The colloid...GaAs nanocrystals were prepared via a simple mechanical ball milling technique. The prepared GaAs nanocrystals have high purity and could form colloidal ethanol suspension without any surfactant additives. The colloidal GaAs nanocrystal suspension displayed excellent two-photon absorption property over the visible and near-infrared region from 490 nm to 1064 nm, which enables it to become a promising broadband optical limiting material.展开更多
We report the formation dynamics of periodic ripples on Ga As induced by femtosecond laser pulses（800 nm, 50 fs） via a collinear time-resolved imaging technique with a temporal resolution of 1 ps and a spatial resol...We report the formation dynamics of periodic ripples on Ga As induced by femtosecond laser pulses（800 nm, 50 fs） via a collinear time-resolved imaging technique with a temporal resolution of 1 ps and a spatial resolution of 440 nm. The onset of periodic ripples emerges in the initial tens of picoseconds in the timescale of material ejection. The periodic ripples appear after irradiation of at least two pump pulses at surface defects produced by the first pulse and the ripple positions kept stable until the formation processes complete. The formation mechanisms of laser-induced periodic ripples are also discussed.展开更多
This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical...This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].展开更多
基金supported by the Nanotechnology Special Project of Science and Technology Commission of Shanghai (No. 1052nm07100)the Ministry of Education Doctoral Fund of New Teachers of China (No. 20093120120007)the National Natural Science Foundation of China (No. 61007059)
文摘Ultrafast electromagnetic waves radiated from semiconductor material under high electric fields and photoexcited by femtosecond laser pulses have been recorded by using terahertz time domain spectroscopy （THz-TDS）.The waveforms of these electromagnetic waves reflect the dynamics of the photoexcited carriers in the semiconductor material,thus,THz-TDS provides a unique opportunity to observe directly the temporal and spatial evolutions of non-equilibrium transport of carriers within sub-picosecond time scale.We report on the observed THz emission waveforms emitted from GaAs by using a novel technology,the time domain THz electro-optic （EO） sampling,which has a bipolar feature,i.e.,an initial positive peak and a subsequent negative dip that arises from its velocity overshoot.The initial positive peak has been interpreted as electron acceleration in the bottom of Γ valley in GaAs,where electrons have a light effective mass.The subsequent negative dip has been attributed to intervalley transfer from Γ to X and L valleys.Furthermore,the power dissipation spectra of the bulk GaAs in THz range are also investigated by using the Fourier transformation of the time domain THz traces.From the power dissipation spectra,the cutoff frequency for negative power dissipation （i.e.,gain） under step electric field in the bulk GaAs can also be obtained.The cutoff frequency for the gain gradually increases with increasing electric fields up to 50 kV/cm and achieves saturation at approximately 1 THz at 300 K.Furthermore,based on the temperature dependence of the cutoff frequency,we find that this cutoff frequency is governed by the energy relaxation process of electrons from L to Γ valley via successive optical phonon emission.
基金The work was financially supported by the National Natural Science Foundation of China (Nos. 10104003, 10204003, 90206003, and 90101027) and the National Key Basic Research Special Foundation of China (No.TG1999075207).
文摘GaAs nanocrystals were prepared via a simple mechanical ball milling technique. The prepared GaAs nanocrystals have high purity and could form colloidal ethanol suspension without any surfactant additives. The colloidal GaAs nanocrystal suspension displayed excellent two-photon absorption property over the visible and near-infrared region from 490 nm to 1064 nm, which enables it to become a promising broadband optical limiting material.
基金supported by the National Natural Science Foundation of China(Nos.11104178,11274116,and 51132004)the National Special Science Research Program of China(Nos.2010CB923203 and 2011CB808105)+2 种基金the Innovation Program of Shanghai Municipal Education Commission(Nos.14YZ156,11JC1403500,and 10XD1401800)the Young Teacher Program of Shanghai University(No.shdj006)the Discipline Foundation Project of Shanghai Dianji University(No.12XKJC01)
文摘We report the formation dynamics of periodic ripples on Ga As induced by femtosecond laser pulses（800 nm, 50 fs） via a collinear time-resolved imaging technique with a temporal resolution of 1 ps and a spatial resolution of 440 nm. The onset of periodic ripples emerges in the initial tens of picoseconds in the timescale of material ejection. The periodic ripples appear after irradiation of at least two pump pulses at surface defects produced by the first pulse and the ripple positions kept stable until the formation processes complete. The formation mechanisms of laser-induced periodic ripples are also discussed.
文摘This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].
