The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spat...The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spatially confined GaN nanofilms. The piezoelectric constitutive relation in GaN nanofilms is taken into account in calculating the phonon dispersion relation. The modified phonon group velocity and phonon density of state as well as the phonon thermal conductivity are also obtained due to the contribution of piezoelectricity. Theoretical results show that the piezoelectricity in GaN nanofilms can change significantly the phonon properties such as the phonon group velocity and density of states, resulting in the variation of the phonon thermal conductivity of GaN nanofilms remarkably. Moreover, the piezoelectricity of GaN can modify the dependence of thermal conductivity on the geometrical size and temperature. These results can be useful in modeling the thermal performance in the active region of GaN-based electronic devices.展开更多
Surface charges can modify the elastic modulus of nanostructure,leading to the change of the phonon and thermal properties in semiconductor nanostructure.In this work,the influence of surface charges on the phonon pro...Surface charges can modify the elastic modulus of nanostructure,leading to the change of the phonon and thermal properties in semiconductor nanostructure.In this work,the influence of surface charges on the phonon properties and phonon thermal conductivity of GaN nanofilm are quantitatively investigated.In the framework of continuum mechanics,the modified elastic modulus can be derived for the nanofilm with surface charges.The elastic model is presented to analyze the phonon properties such as the phonon dispersion relation,phonon group velocity,density of states of phonons in nanofilm with the surface charges.The phonon thermal conductivity of nanofilm can be obtained by considering surface charges.The simulation results demonstrate that surface charges can significantly change the phonon properties and thermal conductivity in a GaN nanofilm.Positive surface charges reduce the phonon energy and phonon group velocity but increase the density of states of phonons.The surface charges can change the size and temperature dependence of phonon thermal conductivity of GaN nanofilm.Based on these theoretical results,one can adjust the phonon properties and temperature/size dependent thermal conductivity in GaN nanofilm by changing the surface charges.展开更多
Gallium nitride（GaN）, the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In th...Gallium nitride（GaN）, the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation（BTE）. The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.展开更多
基金support received from the National Natural Science Foundation of China (11472243, 11302189, 11321202)the Doctoral Fund of Ministry of Education of China (20130101120175)
文摘The effect of piezoelectricity on phonon properties and thermal conductivity of gallium nitride （GaN） nanofilms is theoretically investigated. The elasticity model is utilized to derive the phonon properties in spatially confined GaN nanofilms. The piezoelectric constitutive relation in GaN nanofilms is taken into account in calculating the phonon dispersion relation. The modified phonon group velocity and phonon density of state as well as the phonon thermal conductivity are also obtained due to the contribution of piezoelectricity. Theoretical results show that the piezoelectricity in GaN nanofilms can change significantly the phonon properties such as the phonon group velocity and density of states, resulting in the variation of the phonon thermal conductivity of GaN nanofilms remarkably. Moreover, the piezoelectricity of GaN can modify the dependence of thermal conductivity on the geometrical size and temperature. These results can be useful in modeling the thermal performance in the active region of GaN-based electronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11772294,11621062,and 11302189)the Fundamental Research Funds for the Central Universities,China(Grant No.2017QNA4031)
文摘Surface charges can modify the elastic modulus of nanostructure,leading to the change of the phonon and thermal properties in semiconductor nanostructure.In this work,the influence of surface charges on the phonon properties and phonon thermal conductivity of GaN nanofilm are quantitatively investigated.In the framework of continuum mechanics,the modified elastic modulus can be derived for the nanofilm with surface charges.The elastic model is presented to analyze the phonon properties such as the phonon dispersion relation,phonon group velocity,density of states of phonons in nanofilm with the surface charges.The phonon thermal conductivity of nanofilm can be obtained by considering surface charges.The simulation results demonstrate that surface charges can significantly change the phonon properties and thermal conductivity in a GaN nanofilm.Positive surface charges reduce the phonon energy and phonon group velocity but increase the density of states of phonons.The surface charges can change the size and temperature dependence of phonon thermal conductivity of GaN nanofilm.Based on these theoretical results,one can adjust the phonon properties and temperature/size dependent thermal conductivity in GaN nanofilm by changing the surface charges.
基金supported by the National Natural Science Foundation of China(Grant Nos.11302189 and 11321202)the Doctoral Fund of Ministry of Education of China(Grant No.20130101120175)
文摘Gallium nitride（GaN）, the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation（BTE）. The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.
