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n波导层铟组分对GaN基绿光激光二极管光电性能的影响 被引量:3
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作者 贾甜甜 董海亮 +3 位作者 贾志刚 张爱琴 梁建 许并社 《红外与激光工程》 EI CSCD 北大核心 2021年第10期91-100,共10页
高功率GaN基激光二极管外延结构理论仿真对提高GaN基激光二极管的光电性能具有重要的指导意义。设计了一种n侧双波导结构的绿光激光二极管外延结构,讨论了激光器外延结构中n-In_(x)Ga_(1-x)N波导层中铟组分对其光电性能的影响,揭示了n-I... 高功率GaN基激光二极管外延结构理论仿真对提高GaN基激光二极管的光电性能具有重要的指导意义。设计了一种n侧双波导结构的绿光激光二极管外延结构,讨论了激光器外延结构中n-In_(x)Ga_(1-x)N波导层中铟组分对其光电性能的影响,揭示了n-In_(x)Ga_(1-x)N波导层对激光二极管光电性能的影响机制。通过调控n-In_(x)Ga_(1-x)N波导层中铟组分,调控外延层中的光场分布,使光场发生了偏移。结果表明,当n侧In_(x)Ga_(1-x)N波导层中铟组分最佳值为0.07时,将光子损耗降低了0.2 cm^(-1),阈值电流由193.49 mA降低到115.98 mA,此外,器件的光子损耗最少,阈值电流最小,工作电压最低,从而提高了激光二极管的输出功率和电光转换效率。因此,当绿光激光二极管的注入电流密度为6 kA/cm^(2)时,功率输出达234.95 mW。n侧双波导结构设计为制备高功率绿光激光二极管提供了理论指导和数据支撑。 展开更多
关键词 绿光 gan基激光二极管 波导层 光场分布
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Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes 被引量:1
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作者 梁锋 赵德刚 +11 位作者 江德生 刘宗顺 朱建军 陈平 杨静 刘炜 李翔 刘双韬 邢瑶 张立群 李沫 张健 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期210-215,共6页
Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due t... Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In(0.05) Ga(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly. 展开更多
关键词 gan-based laser diode slope efficiency waveguide
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