Atomic characterization on tetragonal FeAs layer and engineering FeAs superlattices is highly desirable to get deep insight into the multi-band superconductivity in iron-pnictides.We fabricate the tetragonal FeAs laye...Atomic characterization on tetragonal FeAs layer and engineering FeAs superlattices is highly desirable to get deep insight into the multi-band superconductivity in iron-pnictides.We fabricate the tetragonal FeAs layer by topotactic reaction of FeTe films with arsenic and then obtain KxFe_(2)As_(2)upon potassium intercalation using molecular beam epitaxy.The in-situ low-temperature√2×√2scanning tunneling microscopy/spectroscopy investigations demonstrate characteristic reconstruction of the FeAs layer and stripe pattern of KxFe_(2)As_(2),accompanied by the development of a superconducting-like gap.The ex-situ transport measurement with FeTe capping layers shows a superconducting transition with an onset temperature of 10 K.This work provides a promising way to characterize the FeAs layer directly and explore rich emergent physics with epitaxial superlattice design.展开更多
A series of big single crystals of BaFeFe2-xNixAs2 have been prepared by the FeAs self-flux method, with nominal nickel doping x = 0--0.12. The dimensions of the cleaved crystals are over 10~mm along ab plane and ～ 2...A series of big single crystals of BaFeFe2-xNixAs2 have been prepared by the FeAs self-flux method, with nominal nickel doping x = 0--0.12. The dimensions of the cleaved crystals are over 10~mm along ab plane and ～ 2~mm in maximum along the c direction. The measurements of x-ray diffraction, electrical resistance and magnetic property are carried out on the crystals. For the undoped parent compound BaFe2As2, both resistance and magnetization data display an anomaly associated with spin density wave and/or structural phase transition, with the transition temperatures at ～ 138~K. For Ni-doped BaFe2-xNixAs2 crystals, the superconducting critical temperature Tc ranges from 4.3~K for x=0.06 sample to 20~K for the optimally doped x=0.10 crystal.展开更多
FeAs^- single layer is tested as a simple model for LaFeAsO and BaFe2As2 based on firstprinciples calculations using generalized gradient approximation （GGA） and GGA＋U. The calculated single-layer geometric and ele...FeAs^- single layer is tested as a simple model for LaFeAsO and BaFe2As2 based on firstprinciples calculations using generalized gradient approximation （GGA） and GGA＋U. The calculated single-layer geometric and electronic structures are inconsistent with that of bulk materials. The bulk collinear antiferromagnetic ground state failed to be obtained in the FeAs^- single layer. The monotonous behavior of the Fe-As distance in z direction upon electron or hole doping is also in contrast with bulk materials. The results indicate that, in LaFeAsO and BaFe2As2, interactions between FeAs layer and other layers beyond simple charge doping are important, and a single FeAs layer may not represent a good model for Fe based superconducting materials.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12074210,51788104,11790311,and 12141403)the Basic and Applied Basic Research Major Programme of Guangdong Province of China(No.2021B0301030003)Jihua Laboratory(Project No.X210141TL210).
文摘Atomic characterization on tetragonal FeAs layer and engineering FeAs superlattices is highly desirable to get deep insight into the multi-band superconductivity in iron-pnictides.We fabricate the tetragonal FeAs layer by topotactic reaction of FeTe films with arsenic and then obtain KxFe_(2)As_(2)upon potassium intercalation using molecular beam epitaxy.The in-situ low-temperature√2×√2scanning tunneling microscopy/spectroscopy investigations demonstrate characteristic reconstruction of the FeAs layer and stripe pattern of KxFe_(2)As_(2),accompanied by the development of a superconducting-like gap.The ex-situ transport measurement with FeTe capping layers shows a superconducting transition with an onset temperature of 10 K.This work provides a promising way to characterize the FeAs layer directly and explore rich emergent physics with epitaxial superlattice design.
基金supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB601002)the National Natural Science Foundation of China (Grant No. 10734120)
文摘A series of big single crystals of BaFeFe2-xNixAs2 have been prepared by the FeAs self-flux method, with nominal nickel doping x = 0--0.12. The dimensions of the cleaved crystals are over 10~mm along ab plane and ～ 2~mm in maximum along the c direction. The measurements of x-ray diffraction, electrical resistance and magnetic property are carried out on the crystals. For the undoped parent compound BaFe2As2, both resistance and magnetization data display an anomaly associated with spin density wave and/or structural phase transition, with the transition temperatures at ～ 138~K. For Ni-doped BaFe2-xNixAs2 crystals, the superconducting critical temperature Tc ranges from 4.3~K for x=0.06 sample to 20~K for the optimally doped x=0.10 crystal.
基金Ⅴ. ACKNOWLEDGMENTS This work was partially supported by the National Natural Science Foundation of China （No.50721091, No.20533030, No.50731160010, No.20873129, and No.20803071）, the National Key Basic Research Program （No.2006CB922004）, the USTC-HP HPC Project, and by the SCCAS and Shanghai Supercomputer Center.
文摘FeAs^- single layer is tested as a simple model for LaFeAsO and BaFe2As2 based on firstprinciples calculations using generalized gradient approximation （GGA） and GGA＋U. The calculated single-layer geometric and electronic structures are inconsistent with that of bulk materials. The bulk collinear antiferromagnetic ground state failed to be obtained in the FeAs^- single layer. The monotonous behavior of the Fe-As distance in z direction upon electron or hole doping is also in contrast with bulk materials. The results indicate that, in LaFeAsO and BaFe2As2, interactions between FeAs layer and other layers beyond simple charge doping are important, and a single FeAs layer may not represent a good model for Fe based superconducting materials.
