利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高...利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高浓度掺杂。在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重,射程短而溅射效应强,因此限制了 Er 原子浓度的进一步提高。在注量相同时,随束流密度的增加,Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤,但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系,给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅,随注量的增加 Er 保留量逐渐达到饱和,饱和量接近 2×1017 cm–2,而丢失量增加。展开更多
The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a ...The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.展开更多
Novel Er3+-doped bismuth lead strontiam glass was fabricated and characterized, and the absorption spectrum and upconversion spectrum of the glass were studied. The Judd-Ofelt intensity parameters Ωt (t=2, 4, 6) were...Novel Er3+-doped bismuth lead strontiam glass was fabricated and characterized, and the absorption spectrum and upconversion spectrum of the glass were studied. The Judd-Ofelt intensity parameters Ωt (t=2, 4, 6) were found to be Ω2=3.27×10-20 cm2, Ω4=1.15×10-20 cm2, and Ω6=0.38×10-20 cm2. The oscillator strength, the spontaneous transition probabilities, the fluorescence branching ratios, and excited state lifetimes were also measured and calculated. The upconversion emission intensity varies with the power of infrared excitation intensity. A plot of log Iup vs log IIR yields a straight line with slope 1.86, 1.88 and 1.85, corresponding to 525, 546, and 657 nm emission bands, respectively, which indicates that a two-photon process for the red and green emission.展开更多
文摘利用金属蒸发真空弧(MEVVA)离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入,用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明,离子注入突破了平衡生长方法掺Er 硅溶解度的限制,实现了离子的高浓度掺杂。在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重,射程短而溅射效应强,因此限制了 Er 原子浓度的进一步提高。在注量相同时,随束流密度的增加,Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤,但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系,给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅,随注量的增加 Er 保留量逐渐达到饱和,饱和量接近 2×1017 cm–2,而丢失量增加。
基金Project supported by the Natural Science Foundation of Shandong Province,China (Grant Nos. ZR2011AM011 andZR2009FM031)the National Natural Science Foundation of China (Grant No. 11005070)the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department,China (Grant No. 2011YK033)
文摘The annealing behaviour of 400 keV Er ions at a fluence of 2×10^15 cm^-2 implanted into silicon-on-insulator（SOI） samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He^2＋ ions with a multiple scattering model.It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres,successively,at ℃,and that only a small number of the Er atoms segregated to the surface of the SOI sample,whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen.For the SOI sample co-implanted with Er and O ions,there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at ℃.
文摘Novel Er3+-doped bismuth lead strontiam glass was fabricated and characterized, and the absorption spectrum and upconversion spectrum of the glass were studied. The Judd-Ofelt intensity parameters Ωt (t=2, 4, 6) were found to be Ω2=3.27×10-20 cm2, Ω4=1.15×10-20 cm2, and Ω6=0.38×10-20 cm2. The oscillator strength, the spontaneous transition probabilities, the fluorescence branching ratios, and excited state lifetimes were also measured and calculated. The upconversion emission intensity varies with the power of infrared excitation intensity. A plot of log Iup vs log IIR yields a straight line with slope 1.86, 1.88 and 1.85, corresponding to 525, 546, and 657 nm emission bands, respectively, which indicates that a two-photon process for the red and green emission.
