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氧化铟锡(ITO)膜的光学及电学性能 被引量:8
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作者 史月艳 潘文辉 殷志强 《真空科学与技术》 CSCD 1994年第1期35-40,共6页
在基片加热状态下,利用直流平面磁控反应溅射技术制备重掺杂In2O3:Sn薄膜,研究其光学及电学性能。从光谱测量出发计算了膜的折射率及消光系数,并确定了膜的有效禁带宽度为4.25eV,比未掺杂的In2O3有更宽的禁带宽度。测量In2O3:Sn... 在基片加热状态下,利用直流平面磁控反应溅射技术制备重掺杂In2O3:Sn薄膜,研究其光学及电学性能。从光谱测量出发计算了膜的折射率及消光系数,并确定了膜的有效禁带宽度为4.25eV,比未掺杂的In2O3有更宽的禁带宽度。测量In2O3:Sn.膜的霍耳系数,并从介电常数的计算获得了膜的电子浓度约1020/cm3。 展开更多
关键词 溅射 ITO 薄膜 光学性质 电性质
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Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells
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作者 Issiaka Sankara Soumaïla Ouédraogo +4 位作者 Daouda Oubda Boureima Traoré Marcel Bawindsom Kébré Adama Zongo François Zougmoré 《Advances in Materials Physics and Chemistry》 2023年第8期151-160,共10页
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the... In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance. 展开更多
关键词 Defect Density electron Mobility band gap PEROVSKITE SCAPS-1D Software
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电子束蒸发沉积金属-TiO_2薄膜的结构和光学性质 被引量:3
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作者 周兵 江晓红 +2 位作者 沈瑞琪 陆路德 Rogachev A.V. 《南京理工大学学报》 EI CAS CSCD 北大核心 2010年第4期547-552,共6页
采用电子束蒸发法在玻璃基底上制备了TiO2薄膜及Fe、Cu、Al掺杂TiO2膜,通过XRD、Raman光谱、XPS及AFM等测试手段研究了TiO2膜及金属-TiO2掺杂膜的结构、组成和形貌。金属掺杂量为1%,退火温度为773 K时,沉积得到的薄膜均为锐钛矿晶体结构... 采用电子束蒸发法在玻璃基底上制备了TiO2薄膜及Fe、Cu、Al掺杂TiO2膜,通过XRD、Raman光谱、XPS及AFM等测试手段研究了TiO2膜及金属-TiO2掺杂膜的结构、组成和形貌。金属掺杂量为1%,退火温度为773 K时,沉积得到的薄膜均为锐钛矿晶体结构的TiO2,掺杂金属的种类对薄膜的晶粒尺寸有一定的影响。采用紫外-可见分光光度计测试薄膜的吸收光谱,掺杂后TiO2的吸收带边发生改变,薄膜对可见光的吸收明显加强。光催化降解甲基橙实验表明,制备的TiO2薄膜及其金属掺杂膜具有一定的光催化活性,且Fe-TiO2膜的降解效率较高。 展开更多
关键词 TIO2薄膜 锐钛矿 电子束蒸发 金属掺杂 禁带宽度 光催化
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3-烷基噻吩交替共聚物的合成及其电化学性质 被引量:3
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作者 王雪梅 石晨 +3 位作者 肖英勃 韦斌 孙岳明 祁争健 《应用化学》 CAS CSCD 北大核心 2009年第6期707-710,共4页
通过Heck偶联法合成了4种3-烷基噻吩交替共聚物:聚(2,4-二乙烯基-3-己基噻吩-1,3,4-二唑)(P3HT-OXD)、聚(2,4-二乙烯基-3-辛基噻吩-1,3,4-二唑)(P3OT-OXD)、聚(2,4-二乙烯基-3-己基噻吩-吡啶)(P3HT-Py)和聚(2,4-二乙烯基-3-辛基噻吩-吡... 通过Heck偶联法合成了4种3-烷基噻吩交替共聚物:聚(2,4-二乙烯基-3-己基噻吩-1,3,4-二唑)(P3HT-OXD)、聚(2,4-二乙烯基-3-辛基噻吩-1,3,4-二唑)(P3OT-OXD)、聚(2,4-二乙烯基-3-己基噻吩-吡啶)(P3HT-Py)和聚(2,4-二乙烯基-3-辛基噻吩-吡啶)(P3OT-Py)。用NMR、GPC等测试技术对其结构进行了表征。采用循环伏安法、紫外-可见吸收光谱法研究了系列共聚物光电性能。结果表明,随噻吩环3位取代烷基碳链的增长,聚合物电离能(Ip)减小,带隙(Eg)也随之变窄。其中,P3OT-OXD的Eg比P3HT-OXD小0.11 eV,P3OT-Py的Eg比P3HT-Py小0.19 eV,在3-烷基噻吩聚合物主链上引入吸电子能力较强的二唑单元,可有效提高共聚物电子亲合能(Ea),对提高电子传输能力,改善电子与空穴注入平衡有积极作用。 展开更多
关键词 聚噻吩 循环伏安 电子亲合能 电离能 带隙
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The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole 被引量:2
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作者 J.V.Thombare M.C.Rath +1 位作者 S.H.Han V.J.Fulari 《Journal of Semiconductors》 EI CAS CSCD 2013年第9期11-15,共5页
The optical properties of polypyrrole (Ppy) thin films upon 2 MeV electron beam irradiation changes with different doses. The induced changes in the optical properties for Ppy thin films were studied in the visible ... The optical properties of polypyrrole (Ppy) thin films upon 2 MeV electron beam irradiation changes with different doses. The induced changes in the optical properties for Ppy thin films were studied in the visible range 300 to 800 nm at room temperature. The optical band gap of the pristine Ppy was found to be 2.19 cV and it decreases up to 1.97 eV for a 50 kGy dose of 2 MeV electron beam. The refractive index dispersion of the samples obeys the single oscillator model. The obtained results suggest that electron beam irradiation changes the optical parameters of Ppy thin films. 展开更多
关键词 POLYPYRROLE electron beam irradiation optical band gap
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外场对π电子能隙调制C==C,C-C伸缩振动的影响 被引量:2
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作者 龚楠 曹献文 +6 位作者 孙成林 房文汇 苑举辉 高淑琴 里佐威 陈伟 付浩阳 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2018年第8期2462-2467,共6页
共振拉曼光谱是研究线性多烯分子的主要分子光谱技术。该技术完美地表征了π电子能隙对C=C,C—C伸缩振动的调制规律。这种调制是通过电子-声子耦合完成的。改变外界环境,能隙调制作用将受到影响。测量了溶剂中β-胡萝卜素分子在温度、... 共振拉曼光谱是研究线性多烯分子的主要分子光谱技术。该技术完美地表征了π电子能隙对C=C,C—C伸缩振动的调制规律。这种调制是通过电子-声子耦合完成的。改变外界环境,能隙调制作用将受到影响。测量了溶剂中β-胡萝卜素分子在温度、压力、溶剂效应、相变等不同环境影响下的吸收光谱、共振拉曼光谱,研究了不同外场对π电子能隙调制C=C,C—C伸缩振动的影响机理及规律。结果表明,在外场影响下,体系的能量降低,π电子能隙(π—π*)减小会使调制增强。即电子-声子耦合增强,使拉曼强度增加,谱线红移。对理解共振拉曼物理过程,认识线性多烯分子的结构,性能有重要意义,对研制优质光电器件也有参考价值。 展开更多
关键词 线性多烯分子 电子能隙 共振拉曼光谱 电子-声子耦合
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基于等离激元热电子效应的光电晶体管制备及其特性 被引量:2
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作者 陈广甸 翟雨生 +1 位作者 李裕培 王琦龙 《光学精密工程》 EI CAS CSCD 北大核心 2018年第3期517-522,共6页
为了解决典型宽禁带半导体光电探测器件的工作波段限制材料禁带宽度的问题,对基于表面等离激元热电子效应的光电晶体管进行了制备和光电性能研究,提出一种采用重掺杂的硅片作为背栅极、二氧化硅(SiO_2)氧化层作为绝缘层,且能利用等离激... 为了解决典型宽禁带半导体光电探测器件的工作波段限制材料禁带宽度的问题,对基于表面等离激元热电子效应的光电晶体管进行了制备和光电性能研究,提出一种采用重掺杂的硅片作为背栅极、二氧化硅(SiO_2)氧化层作为绝缘层,且能利用等离激元热电子效应的光电晶体管,有望实现响应光谱的调控。利用热退火方法在绝缘层表面修饰金纳米颗粒,并结合射频溅射、物理掩模和真空热蒸镀的方法实现了热电子效应铟镓锌氧化物(IGZO)光电晶体管。器件的光学和电学性能测试结果表明:修饰金纳米颗粒的光电晶体管在658nm红光入射下产生明显的光电响应,外加90V栅极偏压时,光电流提升约为2.2倍。金纳米颗粒修饰的等离激元热电子结构有效调控了该型晶体管的响应光谱范围,不受材料禁带宽度的限制,而且晶体管的背栅调控进一步放大光电流,提高了器件的量子效率。 展开更多
关键词 光电探测 等离激元 热电子 禁带宽度 铟镓锌氧化物
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Thienopyrazine or Dithiadiazatrindene Containing Low Band Gap Conjugated Polymers for Polymer Solar Cells 被引量:1
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作者 Mukhamed L.Keshtov Dmitry V.Marochkin +4 位作者 Ying-ying Fu Zhi-yuan Xie 耿延候 Vitaly S.Kochurov Alexei R.Khokhlov 《Chinese Journal of Polymer Science》 SCIE CAS CSCD 2014年第7期844-853,共10页
Four new low-band-gap alternating copolymers (P-1, P-2, P-3 and P-4) based on electron-rich benzodithiophene and newly developed electron-deficient units, thienopyrazine or dithiadiazatrindene derivatives, were synt... Four new low-band-gap alternating copolymers (P-1, P-2, P-3 and P-4) based on electron-rich benzodithiophene and newly developed electron-deficient units, thienopyrazine or dithiadiazatrindene derivatives, were synthesized by Stille polycondensation. All polymers exhibit good solubility in common organic solvents and a broad absorption band in the visible to near-infrared regions. The film optical band gaps of the polymers are in the range of 1.28-2.07 eV and the highest occupied molecular orbital (HOMO) energy levels are in the range of-4.99 eV to -5.28 eV. Bulk heterojunction polymer solar cells (PSCs) of the polymers were fabricated with phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor material, and a power conversion efficiency of 0.80% was realized with P-1 as donor material. 展开更多
关键词 Low band gap Conjugated polymers electron-deficient aromatics Polymer solar cells.
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Effect of RO (R=Ca, Sr, Ba, Zn or Pb) component on spectroscopic properties of Eu^(3+) in RO-B_2O_3 glasses 被引量:1
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作者 付少博 陈宝玖 +6 位作者 李香萍 张金苏 田跃 孙佳石 仲海洋 程丽红 吴中立 《Journal of Rare Earths》 SCIE EI CAS CSCD 2012年第10期979-984,共6页
Eu3+-doped binary borate glasses with different metal oxide components RO (R=Ca, Sr, Ba, Zn or Pb) were prepared by meltquenching technique. The fluorescent spectral properties of Eu3+in these glasses were experim... Eu3+-doped binary borate glasses with different metal oxide components RO (R=Ca, Sr, Ba, Zn or Pb) were prepared by meltquenching technique. The fluorescent spectral properties of Eu3+in these glasses were experimentally studied. The analysis on the phonon sidebands (PSBs) indicated that RO component did not cause obvious change of the electron-phonon coupling constant (EPC). By inspecting the optical absorption edges it was found that RO could greatly affect the band gap energy, and the glass with PbO component revealed the smallest band gap energy, the glasses with ZnO, BaO and SrO showed similar band gap energy. The optical transition intensity parameters of Eu3+in all studied glasses were calculated, it was found that for each sample its value of2 was larger than that of 4 and 6, and the sample with PbO component exhibited the smallest2, but the λ values for ZBE, CBE, BBE and SBE were very similar. These results might be helpful for the design of borate glasses. 展开更多
关键词 Eu3+ -doped binary borate glasses electron-phonon coupling optical band gap optical transition rare earths
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Strain effects on band structure of wurtzite ZnO: a GGA+U study 被引量:1
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作者 乔丽萍 柴常春 +2 位作者 杨银堂 于新海 史春蕾 《Journal of Semiconductors》 EI CAS CSCD 2014年第7期32-36,共5页
Band structures in wurtzite bulk ZnO/Zn1-xMgxO are calculated using first-principles based on the framework of generalized gradient approximation to density functional theory with the introduction of the on-site Coulo... Band structures in wurtzite bulk ZnO/Zn1-xMgxO are calculated using first-principles based on the framework of generalized gradient approximation to density functional theory with the introduction of the on-site Coulomb interaction. Strain effects on band gap, splitting energies of valence bands, electron and hole effective masses in strained bulk ZnO are discussed. According to the results, the band gap increases gradually with increasing stress in strained ZnO as an Mg content of Znl-xMgxO substrate less than 0.3, which is consistent with the experimental results. It is further demonstrated that electron mass of conduction band (CB) under stress increases slightly. There are almost no changes in effective masses of light hole band (LHB) and heavy hole band (HHB) along [00k] and [k00] directions under stress, and stress leads to an obvious decrease in effective masses of crystal splitting band (CSB) along the same directions. 展开更多
关键词 GGA U band gap splitting energies electron mass
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HgS/CdS量子线中电子与声子的相互作用(英文)
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作者 张翠玲 林瑞 刘启能 《西南大学学报(自然科学版)》 CAS CSCD 北大核心 2011年第3期33-36,共4页
在有限深势阱模型下,求出了考虑到电子-声子相互作用情况下量子线电子基态能、概率分布和禁带宽度,以HgS/CdS量子线为例,研究了电子-声子相互作用对它们的影响.结果表明:电子-声子相互作用会降低电子基态能,在对基态能的影响中以电子与... 在有限深势阱模型下,求出了考虑到电子-声子相互作用情况下量子线电子基态能、概率分布和禁带宽度,以HgS/CdS量子线为例,研究了电子-声子相互作用对它们的影响.结果表明:电子-声子相互作用会降低电子基态能,在对基态能的影响中以电子与界面光学支声子相互作用的影响最大,而与界面声学支声子相互作用影响最小;电子-声子相互作用的影响和电子由势阱透入有限高势垒的概率以及禁带宽度均随量子导线半径R的减小而增大;电子-声子相互作用不改变禁带宽度随R的变化趋势,仅使其数值减小. 展开更多
关键词 电子-声子相互作用 HgS/Cds量子线 电子和空穴 基态能 禁带宽度
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掺杂对氧化钛薄膜光学性能的影响 被引量:1
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作者 李云 王六定 《材料工程》 EI CAS CSCD 北大核心 2008年第7期15-17,共3页
采用电子束蒸发法制备掺杂铈的TiO2薄膜,研究掺杂铈对TiO2薄膜的折射率、透射率和禁带宽度的影响。实验发现适量掺杂CeO2会提高薄膜的折射率;并使氧化钛薄膜的禁带宽度Eg从3.27eV减小到2.51eV,从而使光本征吸收边从380nm红移到495nm,大... 采用电子束蒸发法制备掺杂铈的TiO2薄膜,研究掺杂铈对TiO2薄膜的折射率、透射率和禁带宽度的影响。实验发现适量掺杂CeO2会提高薄膜的折射率;并使氧化钛薄膜的禁带宽度Eg从3.27eV减小到2.51eV,从而使光本征吸收边从380nm红移到495nm,大大提高了对太阳光的利用能力。 展开更多
关键词 电子束蒸发 TIO2薄膜 CeO2掺杂 折射率 禁带宽度
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电子密度对等离子体光子晶体禁带特性的影响 被引量:1
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作者 范伟丽 张新立 董丽芳 《光学技术》 CAS CSCD 北大核心 2010年第4期627-631,共5页
从Maxwell方程出发,采用类似于量子力学Kronig-Penney模型求解周期势的方法,结合双水电极介质阻挡放电的实验结果,研究了电子密度ne对一维等离子体光子晶体禁带特性的影响。研究发现:电子密度对等离子体光子晶体光子禁带的位置和宽度均... 从Maxwell方程出发,采用类似于量子力学Kronig-Penney模型求解周期势的方法,结合双水电极介质阻挡放电的实验结果,研究了电子密度ne对一维等离子体光子晶体禁带特性的影响。研究发现:电子密度对等离子体光子晶体光子禁带的位置和宽度均有重要的影响;等离子体光子晶体的禁带宽度随电子密度的增加而增大,增长速率为电子密度的函数;等离子体光子晶体的截止频率、光子禁带边缘频率随电子密度的增大而增大。给出了当等离子体光子晶体具有显著禁带宽度时的电子密度的理论临界值。 展开更多
关键词 等离子体 光子晶体 电子密度 光子禁带
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一维窄带光子晶体制备与光学特性研究 被引量:1
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作者 杜倩倩 王文军 +3 位作者 李淑红 刘云龙 史强 张丙元 《激光与光电子学进展》 CSCD 北大核心 2015年第11期222-227,共6页
在实验上研究了不同材料构成的一维窄带光子晶体带隙特性,采用电子束热蒸发技术,制备了一系列可见光范围内的窄带光子晶体反射镜。实验结果表明:高低折射率比值能够影响光子晶体对相应频率光的抑制能力。折射率比值恒定时,随周期数的增... 在实验上研究了不同材料构成的一维窄带光子晶体带隙特性,采用电子束热蒸发技术,制备了一系列可见光范围内的窄带光子晶体反射镜。实验结果表明:高低折射率比值能够影响光子晶体对相应频率光的抑制能力。折射率比值恒定时,随周期数的增多,最大反射率增大,带隙宽度减小;对于折射率比值不同的光子晶体,折射率比值越小,带隙越窄,达到高反射率所需的周期数目越多。通过构建异质结构光子晶体,显著缩小了光子晶体带隙,并使其在短周期内实现了窄帯高反射率。 展开更多
关键词 光学器件 光子晶体 电子束蒸发 光子禁带 异质结构
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OPTICAL BAND GAP AND CONDUCTIVITY MEASUREMENTS OF POLYPYRROLE-CHITOSAN COMPOSITE THIN FILMS
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作者 Mahnaz M.Abdi H.N.M.Ekramul Mahmud +3 位作者 Luqman Chuah Abdullah Anuar Kassim Mohamad Zaki Ab.Rahman Josephine Liew Ying Chyi 《Chinese Journal of Polymer Science》 SCIE CAS CSCD 2012年第1期93-100,共8页
Electrical conductivity and optical properties of polypyrrole-chitosan(PPy-CHI) conducting polymer composites have been investigated to determine the optical transition characteristics and energy band gap of composi... Electrical conductivity and optical properties of polypyrrole-chitosan(PPy-CHI) conducting polymer composites have been investigated to determine the optical transition characteristics and energy band gap of composite films.The two electrode method and I-V characteristic technique were used to measure the conductivity of the PPy-CHI thin films,and the optical band gap was obtained from their ultraviolet absorption edges.Depending upon experimental parameter,the optical band gap(E_g) was found within 1.30-2.32 eV as estimated from optical absorption data.The band gap of the composite films decreased as the CHI content increased.The room temperature electrical conductivity of PPy-CHI thin films was found in the range of 5.84×10^(-7)-15.25×10^(-7) S·cm^(-1) depending on the chitosan content.The thermogravimetry analysis(TGA) showed that the CHI can improve the thermal stability of PPy-CHI composite films. 展开更多
关键词 Polymer composite electron transition I-V characteristic technique Optical band gap POLYPYRROLE
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Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene
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作者 胡波 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期508-512,共5页
Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In... Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron–hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron–hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density. 展开更多
关键词 bilayer graphene tunable band gap electron–hole puddles charged impurity scattering
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Accurate Ground State Electronic and Related Properties of Hexagonal Boron Nitride (h-BN)
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作者 Y. Malozovsky C. Bamba +2 位作者 A. Stewart L. Franklin D. Bagayoko 《Journal of Modern Physics》 2020年第6期928-943,共16页
We present an <em>ab-initio</em>, self-consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (h-BN). We used a local density ap... We present an <em>ab-initio</em>, self-consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (h-BN). We used a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) formalism. We rigorously implemented the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). The method ensures a generalized minimization of the energy that is far beyond what can be obtained with self-consistency iterations using a single basis set. The method leads to the ground state of the material, in a verifiable manner, without employing over-complete basis sets. We report the ground state band structure, band gap, total and partial densities of states, and electron and hole effective masses of hexagonal boron nitride (h-BN). Our calculated, indirect band gap of 4.37 eV, obtained with room temperature experimental lattice constants of <em>a</em> = 2.504 <span style="white-space:nowrap;">&Aring;</span> and <em>c </em>= 6.661 <span style="white-space:nowrap;">&Aring;</span>, is in agreement with the measured value of 4.3 eV. The valence band maximum is slightly to the left of the K point, while the conduction band minimum is at the M point. Our calculated, total width of the valence and total and partial densities of states are in agreement with corresponding, experimental findings. 展开更多
关键词 Density Functional Theory band gap Density and Partial Density of States electron and Hole Effective Masses
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On the Galvanic Modification of Seawater
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作者 Alexander Shimkevich 《World Journal of Condensed Matter Physics》 2019年第4期112-121,共10页
Chemical properties of seawater are studied at forced shifting of Fermi level εF? in the band gap of liquid water due to deviation of its composition H2O1&minus;z ( |?z|&minus;13 ) from the stoichiometric one... Chemical properties of seawater are studied at forced shifting of Fermi level εF? in the band gap of liquid water due to deviation of its composition H2O1&minus;z ( |?z|&minus;13 ) from the stoichiometric one ( z = 0 ). It is shown that the hypo-stoichiometric state ( z > 0 ) of seawater emerges when Fermi level is shifted to the local electron level ?εH3O of hydroxonium H3O+ in galvanic cell with the strongly polarized anode and the quasi-equilibrium cathode. Then, each εH3O is occupied by electron and hydroxonium radicals [H3O]? together with hydroxide anions [OH&minus;]?form in seawater hydrated electrons [(H2O)2&minus;] . The opposite hyper-stoichiometric state ( z εOH for removing electron from each hydroxide ion OH&minus;and forming hydroxyl radicals [OH] as strong oxidizers. It turned out that the ions of sodium and chlorine are connected into hydrates of sodium hypochlorite NaClO in this case. 展开更多
关键词 Non-Stoichiometric Seawater band gap FERMI Level Galvanic Cell electron DONOR SODIUM HYPOCHLORITE
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电子—声子相互作用与导电聚合物的带隙
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作者 李宏 《哈尔滨师范大学自然科学学报》 CAS 1999年第1期49-51,共3页
采用考虑电子—电子(e-e)相互作用的扩展的紧束缚模型,研究了非简并基态的导电聚合物—顺式聚乙炔(cis-PA)的能带结构,发现电子—声子(e-ph)耦合增强可使其导带底端能级发生劈裂,从而使带隙变窄.
关键词 导电聚合物 电子-声子 相互作用 聚乙炔
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微波等离子体化学气相沉积法生长非晶碳化硅薄膜 被引量:3
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作者 陈修勇 辛煜 《真空科学与技术学报》 EI CAS CSCD 北大核心 2012年第2期163-168,共6页
利用SiH4(80%Ar稀释)和CH4作为源气体,通过改变源气体流量比、基片温度、沉积气压等参量,使用微波电子回旋共振化学气相沉积法生长非晶碳化硅薄膜。实验结果表明碳化硅薄膜沉积速率随气体流量比R(CH4/(CH4+SiH4))的增加而减小、随基片... 利用SiH4(80%Ar稀释)和CH4作为源气体,通过改变源气体流量比、基片温度、沉积气压等参量,使用微波电子回旋共振化学气相沉积法生长非晶碳化硅薄膜。实验结果表明碳化硅薄膜沉积速率随气体流量比R(CH4/(CH4+SiH4))的增加而减小、随基片温度的升高明显减小、随沉积气压的增加先增大后减小。红外结构表明:在较低流量比R下,薄膜主要由硅团簇和非晶碳化硅两相组成,而当R>0.5时,薄膜的结构主要由非晶碳化硅组成,薄膜中键合的H主要是Si和C的封端原子。同时,沉积温度的升高使碳化硅薄膜中Si-H,C-C和C-H键的含量减少,而薄膜中Si-C含量明显增加且峰位发生了红移。薄膜相结构的转变是薄膜光学带隙变化的原因。 展开更多
关键词 微波电子回旋共振等离子体 非晶碳化硅 红外光谱 光学带隙
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