The physical and electrical properties of lanthanum doped Pb(Zr,Ti)O_3 ceramic sheets(PLZT)which were prepared by tape casting method were carried out.Tape casting of lanthanum modified PZT was performed using commerc...The physical and electrical properties of lanthanum doped Pb(Zr,Ti)O_3 ceramic sheets(PLZT)which were prepared by tape casting method were carried out.Tape casting of lanthanum modified PZT was performed using commercial cellulose acetate binders and poly(ethylene glycol)plasticizers in ethanol solvent.Tapes from these slips were casted on a polymer substrate.The PLZT green tapes were stacked for 5 units and sintered in air at 1050℃ for 1 h with heating rate 5℃/min.SEM micrographs show that the tape is dense(90.26% of theoretical density)and rather uniform with grain size of approximately 1.1 ?m.The dielectric permittivity and loss tangent of PLZT ceramics as a function of temperature at 1 kHz suggest that the compounds exhibit a phase transition of diffuse type.The transition temperature(T_m)and piezoelectric coefficient(d_ 33)were 110℃ and 117 pC/N,respectively.展开更多
为提高0.35μm 30-0-50 V BCD(bipolar-CMOS-DMOS)工艺下50 V HVPMOS的电学性能,在不改变工艺流程的基础上,仅通过微调器件结构尺寸来实现电学性能的优化.采用Silvaco公司的工艺与器件模拟软件,仿真分析了沟道长度、overlap尺寸、场氧...为提高0.35μm 30-0-50 V BCD(bipolar-CMOS-DMOS)工艺下50 V HVPMOS的电学性能,在不改变工艺流程的基础上,仅通过微调器件结构尺寸来实现电学性能的优化.采用Silvaco公司的工艺与器件模拟软件,仿真分析了沟道长度、overlap尺寸、场氧化层长度及场极板长度对50 V HVPMOS器件电学性能的影响.根据仿真结果确定了优化后的结构尺寸,并结合流片测试结果验证了优化方案的可行性.测试结果表明,优化后50 V HVPMOS的开启电压降低到了-0.98 V,击穿电压提高到了-68 V,特征导通电阻降低了13.5%,饱和电流提高了13.1%,器件的安全工作范围增大,饱和区更加平滑,无明显kink效应.展开更多
文摘The physical and electrical properties of lanthanum doped Pb(Zr,Ti)O_3 ceramic sheets(PLZT)which were prepared by tape casting method were carried out.Tape casting of lanthanum modified PZT was performed using commercial cellulose acetate binders and poly(ethylene glycol)plasticizers in ethanol solvent.Tapes from these slips were casted on a polymer substrate.The PLZT green tapes were stacked for 5 units and sintered in air at 1050℃ for 1 h with heating rate 5℃/min.SEM micrographs show that the tape is dense(90.26% of theoretical density)and rather uniform with grain size of approximately 1.1 ?m.The dielectric permittivity and loss tangent of PLZT ceramics as a function of temperature at 1 kHz suggest that the compounds exhibit a phase transition of diffuse type.The transition temperature(T_m)and piezoelectric coefficient(d_ 33)were 110℃ and 117 pC/N,respectively.
文摘为提高0.35μm 30-0-50 V BCD(bipolar-CMOS-DMOS)工艺下50 V HVPMOS的电学性能,在不改变工艺流程的基础上,仅通过微调器件结构尺寸来实现电学性能的优化.采用Silvaco公司的工艺与器件模拟软件,仿真分析了沟道长度、overlap尺寸、场氧化层长度及场极板长度对50 V HVPMOS器件电学性能的影响.根据仿真结果确定了优化后的结构尺寸,并结合流片测试结果验证了优化方案的可行性.测试结果表明,优化后50 V HVPMOS的开启电压降低到了-0.98 V,击穿电压提高到了-68 V,特征导通电阻降低了13.5%,饱和电流提高了13.1%,器件的安全工作范围增大,饱和区更加平滑,无明显kink效应.
