Our world is composed of various materials with different structures,where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology.Apart from conventional coll...Our world is composed of various materials with different structures,where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology.Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetic ally coupled materials,noncollinear spintronic materials have emerged as hot spots of research attention due to exotic physical phenomena.In this review,we first introduce two types of noncollinear spin structures,i.e.,the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases,and then move to relevant novel physical phenomena including topological Hall effect,anomalous Hall effect,multiferroic,Weyl fermions,spin-polarized current and spin Hall effect without spin-orbit coupling in these noncollinear spin systems.Afterward,we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects,which could enable ultralow power spintronic devices in future.In the final outlook part,we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current,verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.展开更多
The ability to control magnetic vortex is critical for their potential applications in spintronic devices.Traditional methods including magnetic field,spin-polarized current etc.have been used to flip the core and/or ...The ability to control magnetic vortex is critical for their potential applications in spintronic devices.Traditional methods including magnetic field,spin-polarized current etc.have been used to flip the core and/or reverse circulation of vortex.However,it is challenging for deterministic electric-field control of the single magnetic vortex textures with time-reversal broken symmetry and no planar magnetic anisotropy.Here it is reported that a deterministic reversal of single magnetic vortex circulation can be driven back and forth by a space-varying strain in multiferroic heterostructures,which is controlled by using a bi-axial pulsed electric field.Phase-field simulation reveals the mechanism of the emerging magnetoelastic energy with the space variation and visualizes the reversal pathway of the vortex.This deterministic electric-field control of the single magnetic vortex textures demonstrates a new approach to integrate the low-dimensional spin texture into the magnetoelectric thin film devices with low energy consumption.展开更多
Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a no...Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.展开更多
Multistate magnetic memory effect in heterostructures composed of FeRh thin films with antiferromagnetic(AFM)-ferromagnetic(FM)phase transition and(001)-oriented PMN-PT substrates has been investigated.Utilizing a uni...Multistate magnetic memory effect in heterostructures composed of FeRh thin films with antiferromagnetic(AFM)-ferromagnetic(FM)phase transition and(001)-oriented PMN-PT substrates has been investigated.Utilizing a unipolar electric field,the nonvolatile change in magnetization was nearly doubled compared with that obtained utilizing a conventional bipolar bias.Four stable nonvolatile magnetic states were obtained over a broad temperature span,from 320 to 390K,by adjusting the amplitude of the unipolar electric pulses,demonstrating the possibility of realizing a multistate nonvolatile magnetic memory in the FeRh/PMN-PT heterostructures.This work provides a new strategy for enhancing the magnetic response by utilizing unipolar electric fields and promotes the utilization of AFM-FM phase transition materials in multifunctional information storage and novel spintronic devices.展开更多
利用磁场调控电子的自旋状态是最直接的方式,然而磁场调控方式存在实际局限性,因此探索除磁场外的物理场调控电子的自旋态,无论在理论还是实际应用都具有重要的意义。电场调控磁性(磁电效应)是一种较为普遍的效应,其将材料电极化强度与...利用磁场调控电子的自旋状态是最直接的方式,然而磁场调控方式存在实际局限性,因此探索除磁场外的物理场调控电子的自旋态,无论在理论还是实际应用都具有重要的意义。电场调控磁性(磁电效应)是一种较为普遍的效应,其将材料电极化强度与磁化强度矢量紧密联系,可应用于能量转换、弱信号传输、磁(电)场检测,信息存储等领域,但真正突破性应用是在信息存储领域。本文初步综述了近年来国内外电场调控电子的自旋态及输运性质的研究进展,包括电场调控磁各向异性、电场调控界面磁化矢量、本征磁电耦合效应、纯自旋流调控磁矩、铁电场调控隧道磁电阻、Bi Fe O3铁电畴/反铁磁畴耦合、应力媒介调控磁性、界面磁失措及轨道重整化等方面。研究表明,通过外电场调控电子的自旋状态和输运性质,提供了一种低能耗读取或写入信息的新途径,向实现低能耗磁随机存储器及逻辑器件迈出了关键步骤。特别是通过铁电场调控电子的自旋状态和输运性质,提供了非易失性电场调控电子自旋状态的新方法,为磁电耦合效应在自旋电子学中的应用奠定了基础,在信息存储领域及器件具有潜在的应用价值。展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.51822101,51861135104,51771009 and 11704018).
文摘Our world is composed of various materials with different structures,where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology.Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetic ally coupled materials,noncollinear spintronic materials have emerged as hot spots of research attention due to exotic physical phenomena.In this review,we first introduce two types of noncollinear spin structures,i.e.,the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases,and then move to relevant novel physical phenomena including topological Hall effect,anomalous Hall effect,multiferroic,Weyl fermions,spin-polarized current and spin Hall effect without spin-orbit coupling in these noncollinear spin systems.Afterward,we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects,which could enable ultralow power spintronic devices in future.In the final outlook part,we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current,verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.
基金supported by the National Key Research and Development Program of China(2016YFA0302300 and 2017YFA0206200)Basic Science Center Program of the National Natural Science Foundation of China(51788104)+5 种基金National Natural Science Foundation of China(11974052,51972028)Beijing Natural Science Foundation(Z190008)Chinese Academy of Sciences Interdisciplinary Innovation Teamfunded by the Director,Office of Science,Office of Basic Energy Sciences,Materials Science and Engineering Department of the US Department of Energy(DOE)in the Quantum Materials Program(KC2202)under Contract No.DEAC02-05CH11231the support by the Science Alliance Joint Directed Research&Development Programthe Transdisciplinary Academy Program at the University of Tennessee。
文摘The ability to control magnetic vortex is critical for their potential applications in spintronic devices.Traditional methods including magnetic field,spin-polarized current etc.have been used to flip the core and/or reverse circulation of vortex.However,it is challenging for deterministic electric-field control of the single magnetic vortex textures with time-reversal broken symmetry and no planar magnetic anisotropy.Here it is reported that a deterministic reversal of single magnetic vortex circulation can be driven back and forth by a space-varying strain in multiferroic heterostructures,which is controlled by using a bi-axial pulsed electric field.Phase-field simulation reveals the mechanism of the emerging magnetoelastic energy with the space variation and visualizes the reversal pathway of the vortex.This deterministic electric-field control of the single magnetic vortex textures demonstrates a new approach to integrate the low-dimensional spin texture into the magnetoelectric thin film devices with low energy consumption.
基金Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403602)the National Natural Science Foundation of China (Grant Nos. 51971109, 52025012, and 52001169)。
文摘Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.
基金supported by the National Natural Science Foundation of China(12104007,12004366,12004367,51627901,12074212,and U19A2093)Tsinghua University-Zhejiang Deqing Joint Research Center for Materials Design and Industrial Innovation,Innovation Program for Quantum Science and Technology(2021ZD0302802)National Key R&D Program of the MOST of China(2022YFA1602603)。
基金supported by the National Key Research and Development Program of China(Grant Nos.2020YFA0711502,2019YFA0704900,2018YFA0305704,and 2017YFB0702704)National Natural Science Foundation of China(Grant Nos.52088101,U1832219,51771223,51971240,and 51671022)+3 种基金China Postdoctoral Science Foundation(Grant No.2021M690346)Fundamental Research Funds for the Central Universities and the Youth Teacher International Exchange&Growth Program(Grant Nos.FRF-GF-20-08B,and QNXM20210014)State Key Lab of Advanced Metals and Materials(Grant No.2019-Z11)Key Program and Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB33030200)。
文摘Multistate magnetic memory effect in heterostructures composed of FeRh thin films with antiferromagnetic(AFM)-ferromagnetic(FM)phase transition and(001)-oriented PMN-PT substrates has been investigated.Utilizing a unipolar electric field,the nonvolatile change in magnetization was nearly doubled compared with that obtained utilizing a conventional bipolar bias.Four stable nonvolatile magnetic states were obtained over a broad temperature span,from 320 to 390K,by adjusting the amplitude of the unipolar electric pulses,demonstrating the possibility of realizing a multistate nonvolatile magnetic memory in the FeRh/PMN-PT heterostructures.This work provides a new strategy for enhancing the magnetic response by utilizing unipolar electric fields and promotes the utilization of AFM-FM phase transition materials in multifunctional information storage and novel spintronic devices.
文摘利用磁场调控电子的自旋状态是最直接的方式,然而磁场调控方式存在实际局限性,因此探索除磁场外的物理场调控电子的自旋态,无论在理论还是实际应用都具有重要的意义。电场调控磁性(磁电效应)是一种较为普遍的效应,其将材料电极化强度与磁化强度矢量紧密联系,可应用于能量转换、弱信号传输、磁(电)场检测,信息存储等领域,但真正突破性应用是在信息存储领域。本文初步综述了近年来国内外电场调控电子的自旋态及输运性质的研究进展,包括电场调控磁各向异性、电场调控界面磁化矢量、本征磁电耦合效应、纯自旋流调控磁矩、铁电场调控隧道磁电阻、Bi Fe O3铁电畴/反铁磁畴耦合、应力媒介调控磁性、界面磁失措及轨道重整化等方面。研究表明,通过外电场调控电子的自旋状态和输运性质,提供了一种低能耗读取或写入信息的新途径,向实现低能耗磁随机存储器及逻辑器件迈出了关键步骤。特别是通过铁电场调控电子的自旋状态和输运性质,提供了非易失性电场调控电子自旋状态的新方法,为磁电耦合效应在自旋电子学中的应用奠定了基础,在信息存储领域及器件具有潜在的应用价值。
