Research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since ...Research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief backgroundintroduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials(PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.展开更多
Nonlinear optics(NLO)of transition metal dichalcogenides(TMDs)is promising for the on-chip photonic and optoelectronic applications.In this review,we will survey the current progress of NLO in TMDs.First,we will brief...Nonlinear optics(NLO)of transition metal dichalcogenides(TMDs)is promising for the on-chip photonic and optoelectronic applications.In this review,we will survey the current progress of NLO in TMDs.First,we will brief the basic theory of the NLO in TMDs.Second,several important nonlinear processes in TMDs such as harmonic generation,four-wave mixing,saturable absorption,and two-photon absorption will be presented and their potential applications are also discussed.Third,the main strategies to tune,modulate,and enhance the NLO in TMDs are reviewed,including the excitonic effect,symmetry modulation,optical cavity enhancement,valley selection,edge state,and material phase.Finally,we give an outlook regarding some important issues and directions of NLO in TMDs.展开更多
Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic mater...Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades.Among these compounds,layered two-dimensional(2D)materials,such as graphene,black phosphorus,transition metal dichalcogenides,IVA–VIA compounds,and MXenes,have generated a large research attention as a group of potentially high-performance thermoelectric materials.Due to their unique electronic,mechanical,thermal,and optoelectronic properties,thermoelectric devices based on such materials can be applied in a variety of applications.Herein,a comprehensive review on the development of 2D materials for thermoelectric applications,as well as theoretical simulations and experimental preparation,is presented.In addition,nanodevice and new applications of 2D thermoelectric materials are also introduced.At last,current challenges are discussed and several prospects in this field are proposed.展开更多
It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional(2D)materials.The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostr...It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional(2D)materials.The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures(2DHs)based broadband photodetectors in the far-infrared(IR)and middle-IR regions with high response and high detectivity.This review focuses on the strategy and motivation of designing 2DHs based high-performance IR photodetectors,which provides a wide view of this field and new expectation for advanced photodetectors.First,the photocarriers'generation mechanism and frequently employed device structures are presented.Then,the 2DHs are divided into semimetal/semiconductor 2DHs,semiconductor/semiconductor 2DHs,and multidimensional semi-2DHs;the advantages,motivation,mechanism,recent progress,and outlook are discussed.Finally,the challenges for next-generation photodetectors are described for this rapidly developing field.展开更多
Two-dimensional(2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performa...Two-dimensional(2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performance. Chemical vapor deposition(CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications.However, the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials. The salt has recently been introduced into the CVD process, which proved to be effective to address these issues. In this review, we highlighted the latest progress in the salt-assisted CVD growth of 2D materials, including layered and non-layered crystals. Firstly, strategies of adding salts are summarized. Then, the salt-assisted growth of various layered materials is presented, emphasizing on the transition metal chalcogenides of stable and metastable phases. Furthermore, strategies to grow ultrathin non-layered materials are discussed. We provide viewpoints into the techniques of using salt, the effects of salt, and the growth mechanisms of 2D crystals. Finally, we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.展开更多
Two-dimensional(2D) transition metal dichalcogenides(TMDs) have gained much attention in virtue of their various atomic configurations and band structures.Apart from those thermodynamically stable phases, plenty of me...Two-dimensional(2D) transition metal dichalcogenides(TMDs) have gained much attention in virtue of their various atomic configurations and band structures.Apart from those thermodynamically stable phases, plenty of metastable phases exhibit interesting properties. To obtain 2D TMDs with specific phases, it is important to develop phase engineering strategies including phase transition and phaseselective synthesis. Phase transition is a conventional method to transform one phase to another, while phase-selective synthesis means the direct fabrication of the target phases for2D TMDs. In this review, we introduce the structures and stability of 2D TMDs with different phases. Then, we summarize the detailed processes and mechanism of the traditional phase transition strategies. Moreover, in view of the increasing demand of high-phase purity TMDs, we present the advanced phase-selective synthesis strategies. Finally, we underline the challenges and outlooks of phase engineering of 2D TMDs in two aspects-high phase purity and excellent controllability. This review may promote the development of controllable phase engineering for 2D TMDs and even other2D materials toward both fundamental studies and practical applications.展开更多
Intensive research effort is currently focused on the development of efficient, reliable, and environmentally safe electrochemical energy storage systems due to the ever-increasing global energy storage demand. Li ion...Intensive research effort is currently focused on the development of efficient, reliable, and environmentally safe electrochemical energy storage systems due to the ever-increasing global energy storage demand. Li ion battery systems have been used as the primary energy storage device over the last three decades. However, low abundance and uneven distribution of lithium and cobalt in the earth crust and the associated cost of these materials, have resulted in a concerted effort to develop beyond lithium electrochemical storage systems. In the case of non-Li ion rechargeable systems, the development of electrode materials is a significant challenge, considering the larger ionic size of the metal-ions and slower kinetics. Two-dimensional(2D) materials, such as graphene, transition metal dichalcogenides, MXenes and phosphorene, have garnered significant attention recently due to their multi-faceted advantageous properties: large surface areas, high electrical and thermal conductivity, mechanical strength, etc. Consequently, the study of 2D materials as negative electrodes is of notable importance as emerging non-Li battery systems continue to generate increasing attention. Among these interesting materials, graphene has already been extensively studied and reviewed, hence this report focuses on 2D materials beyond graphene for emerging non-Li systems. We provide a comparative analysis of 2D material chemistry, structure, and performance parameters as anode materials in rechargeable batteries and supercapacitors.展开更多
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of -2.6...Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of -2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition （CVD） growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.展开更多
Infrared photodetectors have attracted much attention considering their wide civil and military applications.Two-dimensional(2D)materials offer new opportunities for the development of costless,high-level integration ...Infrared photodetectors have attracted much attention considering their wide civil and military applications.Two-dimensional(2D)materials offer new opportunities for the development of costless,high-level integration and high-performance infrared photodetectors.With the advent of a broad investigation of infrared photodetectors based on graphene and transition metal chalcogenides(TMDs)exhibiting unique properties in recent decades,research on the better performance of 2D-based infrared photodetectors has been extended to a larger scale,including explorations of new materials and artificial structure designs.In this review,after a brief background introduction,some major working mechanisms,including the photovoltaic effect,photoconductive effect,photogating effect,photothermoelectric effect and bolometric effect,are briefly offered.Then,the discussion mainly focuses on the recent progress of three categories of 2D materials beyond graphene and TMDs.Noble transition metal dichalcogenides,black phosphorus and arsenic black phosphorous and 2D ternary compounds are great examples of explorations of mid-wavelength or even long-wavelength 2D infrared photodetectors.Then,four types of rational structure designs,including type-II band alignments,photogating-enhanced designs,surface plasmon designs and ferroelectric-enhanced designs,are discussed to further enhance the performance via diverse mechanisms,which involve the narrower-bandgap-induced interlayer exciton transition,gate modulation by trapped carriers,surface plasmon polaritons and ferroelectric polarization in sequence.Furthermore,applications including imaging,flexible devices and on-chip integration for 2D-based infrared photodetectors are introduced.Finally,a summary of the state-of-the-art research status and personal discussion on the challenges are delivered.展开更多
Recently,two-dimensional transition metal dichalcogenides(TMDs)demonstrated their great potential as cost-effective catalysts in hydrogen evolution reaction.Herein,we systematically summarize the existing defect engin...Recently,two-dimensional transition metal dichalcogenides(TMDs)demonstrated their great potential as cost-effective catalysts in hydrogen evolution reaction.Herein,we systematically summarize the existing defect engineering strategies,including intrinsic defects(atomic vacancy and active edges)and extrinsic defects(metal doping,nonmetal doping,and hybrid doping),which have been utilized to obtain advanced TMD-based electrocatalysts.Based on theoretical simulations and experimental results,the electronic structure,intermediate adsorption/desorption energies and possible catalytic mechanisms are thoroughly discussed.Particular emphasis is given to the intrinsic relationship between various types of defects and electrocatalytic properties.Furthermore,current opportunities and challenges for mechanical investigations and applications of defective TMD-based catalysts are presented.The aim herein is to reveal the respective properties of various defective TMD catalysts and provide valuable insights for fabricating high-efficiency TMD-based electrocatalysts.展开更多
We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus o...We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus or step pyramids. The SnS2 nanoflakes were grown on mica substrates via an atmospheric-pressure chemical vapor deposition process using tin monosulfide and sulfur powder as precursors. Atomic force microscopy （AFM）, electron microscopy, and Raman characterizations were performed to investigate the structural features, and a sequential layer-wise epitaxial growth mechanism was revealed. In addition, systematic Raman characterizations were performed on individual SnS2 nanoflakes with a wide range of thicknesses （1-100 nm）, indicating that the A1g peak intensity and Raman shifts were closely related to the thickness of the SnS2 nanoflakes. Moreover, photoconductive AFM was performed on the monolayer-stepped SnS2 nanoflakes, revealing that the flat surface and the edges of the SnS2 atomic steps had different electrical conductive properties and photoconductive behaviors. This is ascribed to the dangling bonds and defects at the atomic step edges, which caused a height difference of the Schottky barriers formed at the interfaces between the PtIr-coated AFM tip and the step edges or the flat surface of the SnS2 nanoflakes. The 2D SnS2 crystals with regular monolayer atomic steps and fast photoresponsivity are promising for novel applications in photodetectors and integrated optoelectronic circuits.展开更多
Two-dimensional group-VIB transition metal dichalcogenides（with the formula of MX2） emerge as a family of intensely investigated semiconductors that are promising for both electronic（because of their reasonable car...Two-dimensional group-VIB transition metal dichalcogenides（with the formula of MX2） emerge as a family of intensely investigated semiconductors that are promising for both electronic（because of their reasonable carrier mobility） and optoelectronic（because of their direct band gap at monolayer thickness） applications. Effective mass is a crucial physical quantity determining carriers transport, and thus the performance of these applications. Here we present based on first-principles high-throughput calculations a computational study of carrier effective masses of the two-dimensional MX2 materials. Both electron and hole effective masses of different MX2（M = Mo, W and X = S, Se, Te）, including in-layer/out-of-layer components, thickness dependence, and magnitude variation in heterostructures, are systemically calculated. The numerical results, chemical trends, and the insights gained provide useful guidance for understanding the key factors controlling carrier effective masses in the MX2 system and further engineering the mass values to improve device performance.展开更多
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–...Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.展开更多
Newborn two-dimensional materials(NB2DMs) beyond graphene such as transition metal dichalcogenides(TMDs) exhibit excellent optoelectronic and mechanical properties as well as high theoretical specific capacity, which ...Newborn two-dimensional materials(NB2DMs) beyond graphene such as transition metal dichalcogenides(TMDs) exhibit excellent optoelectronic and mechanical properties as well as high theoretical specific capacity, which make them become the promising building blocks of flexible energy devices related to energy conversion and storage. Compared to graphene with zero band gap or traditional friable materials such as Si, these NB2 DMs are more suitable to construct flexible devices as active layers of optoelectronic devices or as active materials for batteries. The present review focuses on the recent advances in bendable energy devices based on NB2 DMs, including batteries, supercapacitors(SCs), solar cells, photodetectors and nanogenerators(NGs). The NB2 DMs pave a new way to construct next-generation flexible energy devices with improved performance and we believe that those devices will be seen in our daily life and change our lifestyle in the immediate future.展开更多
First-principle calculations with different exchange-correlation functionals, including LDA, PBE, and vd W-DF functional in the form of opt B88-vd W, have been performed to investigate the electronic and elastic prope...First-principle calculations with different exchange-correlation functionals, including LDA, PBE, and vd W-DF functional in the form of opt B88-vd W, have been performed to investigate the electronic and elastic properties of twodimensional transition metal dichalcogenides（TMDCs） with the formula of MX2（M = Mo, W; X = O, S, Se, Te） in both monolayer and bilayer structures. The calculated band structures show a direct band gap for monolayer TMDCs at the K point except for MoO2 and WO2. When the monolayers are stacked into a bilayer, the reduced indirect band gaps are found except for bilayer WTe2, in which the direct gap is still present at the K point. The calculated in-plane Young moduli are comparable to that of graphene, which promises possible application of TMDCs in future flexible and stretchable electronic devices. We also evaluated the performance of different functionals including LDA, PBE, and opt B88-vd W in describing elastic moduli of TMDCs and found that LDA seems to be the most qualified method. Moreover, our calculations suggest that the Young moduli for bilayers are insensitive to stacking orders and the mechanical coupling between monolayers seems to be negligible.展开更多
Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductors not only hold great promises for the development of ultra-thin optoelectronic devices with low-energy consumption,but also provide ideal platforms...Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductors not only hold great promises for the development of ultra-thin optoelectronic devices with low-energy consumption,but also provide ideal platforms to explore and tailor light-matter interaction,e.g.,the exciton-photon interaction,at the atomic level,due to their atomic thickness,large exciton binding energy,and unique valley properties.In recent years,the exciton-photon interactions in TMDC semiconductor microcavities,including the strong exciton-photon coupling and lasing,have drawn increasing attention,which may open up new application prospects for transparent,on-chip coherent,and quantum light sources.Herein,we review the research progresses of strong exciton-photon interaction and lasing of TMDC semiconductors.First,we introduce the electronic structure,exciton,and emission properties of semiconducting TMDCs in the weak exciton-photon coupling regime.Next,the progresses on strong exciton-photon interaction and exciton-polaritons of these TMDCs are discussed from the aspects of photophysics,materials and fabrications,spectroscopies,and controls.Further,the progresses on TMDC lasers are introduced in the aspects of cavity types and materials,and finally,the challenges and prospects for these fields are discussed.展开更多
Two‐dimensional transition metal dichalcogenides(TMDs)play host to a wide range of novel topological states,such as quantum spin Hall insulators,superconductors,and Weyl semimetals.The rich polymorphism in TMDs sugge...Two‐dimensional transition metal dichalcogenides(TMDs)play host to a wide range of novel topological states,such as quantum spin Hall insulators,superconductors,and Weyl semimetals.The rich polymorphism in TMDs suggests that phase engineering can be used to switch between different charge order states.Intercalation of atoms or molecules into the van der Waals gap of TMDs has emerged as a powerful approach to modify the properties of the material,leading to phase transition or the formation of substoichiometric phases via compositional tuning,thus broadening the electronic and optical landscape of these materials for a wide range of applications.Here,we review the current efforts in the preparation of intercalated TMD.The challenges and opportunities for intercalated TMDs to create a new device paradigm for material science are discussed.展开更多
As the crystal quality and phase structure of two-dimensional(2D)transition metal dichalcogenides(TMDs)have significant impacts on their properties such as electroconductivity,superconductivity and chemical stability,...As the crystal quality and phase structure of two-dimensional(2D)transition metal dichalcogenides(TMDs)have significant impacts on their properties such as electroconductivity,superconductivity and chemical stability,the precise synthesis,which plays an important role in fundamental researches and industrial applications,is highly required.Group VI TMDs,such as MoS_(2),usually exhibit diverse polymorphs including semiconducting 1H and metallic 1T phases.Even great efforts are devoted to revealing the structure-dependent physicochemical nature of TMDs by modulating their phases from the stable to the metastable at the atomic scale,there are still challenges on the phase-controlled synthesis of Group VI TMDs with metallic or semimetal properties.In this review,methods such as ion intercalation,chemical doping,strain engineering,defect triggering,and electric-field treatment are examined in detail.Finally,challenges and opportunities in this research field are proposed.展开更多
Exciton physics in atomically thin transition-metal dichalcogenides(TMDCs)holds paramount importance for fundamental physics research and prospective applications.However,the experimental exploration of exciton physic...Exciton physics in atomically thin transition-metal dichalcogenides(TMDCs)holds paramount importance for fundamental physics research and prospective applications.However,the experimental exploration of exciton physics,including excitonic coherence dynamics,exciton many-body interactions,and their optical properties,faces challenges stemming from factors such as spatial heterogeneity and intricate many-body effects.In this perspective,we elaborate upon how optical two-dimensional coherent spectroscopy(2DCS)emerges as an effective tool to tackle the challenges,and outline potential directions for gaining deeper insights into exciton physics in forthcoming experiments with the advancements in 2DCS techniques and new materials.展开更多
文摘Research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief backgroundintroduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials(PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.
基金support from National Natural Science Foundation of China(Grant no.61674060)the Fundamental Research Funds for the Central Universities,Huazhong University of Science and Technology(Grant no.2019kfyXJJS046,2017KFYXJJ030,2017KFXKJ003,2017KFXKJC002).
文摘Nonlinear optics(NLO)of transition metal dichalcogenides(TMDs)is promising for the on-chip photonic and optoelectronic applications.In this review,we will survey the current progress of NLO in TMDs.First,we will brief the basic theory of the NLO in TMDs.Second,several important nonlinear processes in TMDs such as harmonic generation,four-wave mixing,saturable absorption,and two-photon absorption will be presented and their potential applications are also discussed.Third,the main strategies to tune,modulate,and enhance the NLO in TMDs are reviewed,including the excitonic effect,symmetry modulation,optical cavity enhancement,valley selection,edge state,and material phase.Finally,we give an outlook regarding some important issues and directions of NLO in TMDs.
基金supported by National Science Foundation for Young Scientists of China (No.61905161 and 51702219)the National Natural Science Foundation of China (No.61975134,61875138 and 61775147)+1 种基金the Science and Technology Innovation Commission of Shenzhen (No. JCYJ20180206121837007)the Shenzhen Nanshan District Pilotage Team Program (LHTD20170006)
文摘Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades.Among these compounds,layered two-dimensional(2D)materials,such as graphene,black phosphorus,transition metal dichalcogenides,IVA–VIA compounds,and MXenes,have generated a large research attention as a group of potentially high-performance thermoelectric materials.Due to their unique electronic,mechanical,thermal,and optoelectronic properties,thermoelectric devices based on such materials can be applied in a variety of applications.Herein,a comprehensive review on the development of 2D materials for thermoelectric applications,as well as theoretical simulations and experimental preparation,is presented.In addition,nanodevice and new applications of 2D thermoelectric materials are also introduced.At last,current challenges are discussed and several prospects in this field are proposed.
基金supported by the National Natural Science Foundation of China(Grant Nos.51722204,91421110,51802145)the National Key Basic Research Program of China(Grant No.2014CB931702)+3 种基金the Sichuan Provincial Fund for Distinguished Young Academic and Technology Leaders(Grant No.2014JQ0011)the Science and Technology Support Program of Sichuan Province(Grant No.2018RZ0042,2016RZ0033,2018RZ0082)the Natural Science Foundation of Guangdong Province(2018A030310225)China Postdoctoral Science Foundation(Grant No.2018M643443).
文摘It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional(2D)materials.The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures(2DHs)based broadband photodetectors in the far-infrared(IR)and middle-IR regions with high response and high detectivity.This review focuses on the strategy and motivation of designing 2DHs based high-performance IR photodetectors,which provides a wide view of this field and new expectation for advanced photodetectors.First,the photocarriers'generation mechanism and frequently employed device structures are presented.Then,the 2DHs are divided into semimetal/semiconductor 2DHs,semiconductor/semiconductor 2DHs,and multidimensional semi-2DHs;the advantages,motivation,mechanism,recent progress,and outlook are discussed.Finally,the challenges for next-generation photodetectors are described for this rapidly developing field.
基金supported by the National Natural Science Foundation of China (21825103, 51727809)the Fundamental Research Funds for the Central University (2019kfy XMBZ018)the project funded by China Postdoctoral Science Foundation (2018M642832)
文摘Two-dimensional(2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performance. Chemical vapor deposition(CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications.However, the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials. The salt has recently been introduced into the CVD process, which proved to be effective to address these issues. In this review, we highlighted the latest progress in the salt-assisted CVD growth of 2D materials, including layered and non-layered crystals. Firstly, strategies of adding salts are summarized. Then, the salt-assisted growth of various layered materials is presented, emphasizing on the transition metal chalcogenides of stable and metastable phases. Furthermore, strategies to grow ultrathin non-layered materials are discussed. We provide viewpoints into the techniques of using salt, the effects of salt, and the growth mechanisms of 2D crystals. Finally, we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.
基金supported by the National Natural Science Foundation of China (21673161 and 21473124)the Science and Technology Department of Hubei Province (2017AAA114)the Sino-German Center for Research Promotion (1400)
文摘Two-dimensional(2D) transition metal dichalcogenides(TMDs) have gained much attention in virtue of their various atomic configurations and band structures.Apart from those thermodynamically stable phases, plenty of metastable phases exhibit interesting properties. To obtain 2D TMDs with specific phases, it is important to develop phase engineering strategies including phase transition and phaseselective synthesis. Phase transition is a conventional method to transform one phase to another, while phase-selective synthesis means the direct fabrication of the target phases for2D TMDs. In this review, we introduce the structures and stability of 2D TMDs with different phases. Then, we summarize the detailed processes and mechanism of the traditional phase transition strategies. Moreover, in view of the increasing demand of high-phase purity TMDs, we present the advanced phase-selective synthesis strategies. Finally, we underline the challenges and outlooks of phase engineering of 2D TMDs in two aspects-high phase purity and excellent controllability. This review may promote the development of controllable phase engineering for 2D TMDs and even other2D materials toward both fundamental studies and practical applications.
基金supported by the National Science Foundation Grant Number 1454151
文摘Intensive research effort is currently focused on the development of efficient, reliable, and environmentally safe electrochemical energy storage systems due to the ever-increasing global energy storage demand. Li ion battery systems have been used as the primary energy storage device over the last three decades. However, low abundance and uneven distribution of lithium and cobalt in the earth crust and the associated cost of these materials, have resulted in a concerted effort to develop beyond lithium electrochemical storage systems. In the case of non-Li ion rechargeable systems, the development of electrode materials is a significant challenge, considering the larger ionic size of the metal-ions and slower kinetics. Two-dimensional(2D) materials, such as graphene, transition metal dichalcogenides, MXenes and phosphorene, have garnered significant attention recently due to their multi-faceted advantageous properties: large surface areas, high electrical and thermal conductivity, mechanical strength, etc. Consequently, the study of 2D materials as negative electrodes is of notable importance as emerging non-Li battery systems continue to generate increasing attention. Among these interesting materials, graphene has already been extensively studied and reviewed, hence this report focuses on 2D materials beyond graphene for emerging non-Li systems. We provide a comparative analysis of 2D material chemistry, structure, and performance parameters as anode materials in rechargeable batteries and supercapacitors.
文摘Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of -2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition （CVD） growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.
基金the National Natural Science Foundation of China(No.52072308)the Open Project of Basic Research of Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing(No.AMGM2022F02)the Fundamental Research Funds for the Central Universities(Nos.3102021MS0404 and 3102019JC001).
文摘Infrared photodetectors have attracted much attention considering their wide civil and military applications.Two-dimensional(2D)materials offer new opportunities for the development of costless,high-level integration and high-performance infrared photodetectors.With the advent of a broad investigation of infrared photodetectors based on graphene and transition metal chalcogenides(TMDs)exhibiting unique properties in recent decades,research on the better performance of 2D-based infrared photodetectors has been extended to a larger scale,including explorations of new materials and artificial structure designs.In this review,after a brief background introduction,some major working mechanisms,including the photovoltaic effect,photoconductive effect,photogating effect,photothermoelectric effect and bolometric effect,are briefly offered.Then,the discussion mainly focuses on the recent progress of three categories of 2D materials beyond graphene and TMDs.Noble transition metal dichalcogenides,black phosphorus and arsenic black phosphorous and 2D ternary compounds are great examples of explorations of mid-wavelength or even long-wavelength 2D infrared photodetectors.Then,four types of rational structure designs,including type-II band alignments,photogating-enhanced designs,surface plasmon designs and ferroelectric-enhanced designs,are discussed to further enhance the performance via diverse mechanisms,which involve the narrower-bandgap-induced interlayer exciton transition,gate modulation by trapped carriers,surface plasmon polaritons and ferroelectric polarization in sequence.Furthermore,applications including imaging,flexible devices and on-chip integration for 2D-based infrared photodetectors are introduced.Finally,a summary of the state-of-the-art research status and personal discussion on the challenges are delivered.
基金National Natural Science Foundation of China,Grant/Award Numbers:51874039,52103333University of Science and Technology Beijing,talent program,Grant/Award Number:06500167Major Science and Technology Project,Grant/Award Number:2017ZX07402001。
文摘Recently,two-dimensional transition metal dichalcogenides(TMDs)demonstrated their great potential as cost-effective catalysts in hydrogen evolution reaction.Herein,we systematically summarize the existing defect engineering strategies,including intrinsic defects(atomic vacancy and active edges)and extrinsic defects(metal doping,nonmetal doping,and hybrid doping),which have been utilized to obtain advanced TMD-based electrocatalysts.Based on theoretical simulations and experimental results,the electronic structure,intermediate adsorption/desorption energies and possible catalytic mechanisms are thoroughly discussed.Particular emphasis is given to the intrinsic relationship between various types of defects and electrocatalytic properties.Furthermore,current opportunities and challenges for mechanical investigations and applications of defective TMD-based catalysts are presented.The aim herein is to reveal the respective properties of various defective TMD catalysts and provide valuable insights for fabricating high-efficiency TMD-based electrocatalysts.
基金Acknowledgements We thank Prof. Qian Yu at Zhejiang University for the help in the aspect of high-resolution TEM charac- terizations. This work is supported by National Basic Research Program of China （No. 2015CB659300）, National Materials Genome Project （No. 2016YFB0700600）, National Natural Science Foundation of China （Nos. 21403105 and 21573108）, China Postdoctoral Science Foundation （Nos. 2015M580408, 2015M581775, 2015M580413 and 2015M581769）, Natural Science Foundation of Jiangsu Province （Nos. BK20150571 and BK20160647）, Fundamental Research Funds for the Central Universities and a project funded by the Priority Academic Program Development （PAPD） of Jiangsu Higher Education Institutions.
文摘We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus or step pyramids. The SnS2 nanoflakes were grown on mica substrates via an atmospheric-pressure chemical vapor deposition process using tin monosulfide and sulfur powder as precursors. Atomic force microscopy （AFM）, electron microscopy, and Raman characterizations were performed to investigate the structural features, and a sequential layer-wise epitaxial growth mechanism was revealed. In addition, systematic Raman characterizations were performed on individual SnS2 nanoflakes with a wide range of thicknesses （1-100 nm）, indicating that the A1g peak intensity and Raman shifts were closely related to the thickness of the SnS2 nanoflakes. Moreover, photoconductive AFM was performed on the monolayer-stepped SnS2 nanoflakes, revealing that the flat surface and the edges of the SnS2 atomic steps had different electrical conductive properties and photoconductive behaviors. This is ascribed to the dangling bonds and defects at the atomic step edges, which caused a height difference of the Schottky barriers formed at the interfaces between the PtIr-coated AFM tip and the step edges or the flat surface of the SnS2 nanoflakes. The 2D SnS2 crystals with regular monolayer atomic steps and fast photoresponsivity are promising for novel applications in photodetectors and integrated optoelectronic circuits.
基金Project supported by the National Natural Science Foundation of China(Nos.11404131,11674121)the Program for JLU Science and Technology Innovative Research Teamthe Special Fund for Talent Exploitation in Jilin Province of China
文摘Two-dimensional group-VIB transition metal dichalcogenides（with the formula of MX2） emerge as a family of intensely investigated semiconductors that are promising for both electronic（because of their reasonable carrier mobility） and optoelectronic（because of their direct band gap at monolayer thickness） applications. Effective mass is a crucial physical quantity determining carriers transport, and thus the performance of these applications. Here we present based on first-principles high-throughput calculations a computational study of carrier effective masses of the two-dimensional MX2 materials. Both electron and hole effective masses of different MX2（M = Mo, W and X = S, Se, Te）, including in-layer/out-of-layer components, thickness dependence, and magnitude variation in heterostructures, are systemically calculated. The numerical results, chemical trends, and the insights gained provide useful guidance for understanding the key factors controlling carrier effective masses in the MX2 system and further engineering the mass values to improve device performance.
基金supported by Grants from the UK EPSRC Future Compound Semiconductor Manufacturing Hub(EP/P006973/1)the financial support from EPSRC(EP/L018330/1,EP/N032888/1)+3 种基金the U.S.Army Research Laboratory under Cooperative Agreement Number W911NF-16-2-0120the “973 Program—the National Basic Research Program of China” Special Funds for the Chief Young Scientis(2015CB358600)the Excellent Young Scholar Fund from National Natural Science Foundation of China(21422103)the China Scholarship Council(CSC)
文摘Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.
基金supported by the National Natural Science Foundation of China(51322209 and 21473124)Sino-German Center for Research Promotion(GZ871)
文摘Newborn two-dimensional materials(NB2DMs) beyond graphene such as transition metal dichalcogenides(TMDs) exhibit excellent optoelectronic and mechanical properties as well as high theoretical specific capacity, which make them become the promising building blocks of flexible energy devices related to energy conversion and storage. Compared to graphene with zero band gap or traditional friable materials such as Si, these NB2 DMs are more suitable to construct flexible devices as active layers of optoelectronic devices or as active materials for batteries. The present review focuses on the recent advances in bendable energy devices based on NB2 DMs, including batteries, supercapacitors(SCs), solar cells, photodetectors and nanogenerators(NGs). The NB2 DMs pave a new way to construct next-generation flexible energy devices with improved performance and we believe that those devices will be seen in our daily life and change our lifestyle in the immediate future.
基金Project supported by the Construct Program of the Key Discipline in Hunan Province,ChinaAid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China
文摘First-principle calculations with different exchange-correlation functionals, including LDA, PBE, and vd W-DF functional in the form of opt B88-vd W, have been performed to investigate the electronic and elastic properties of twodimensional transition metal dichalcogenides（TMDCs） with the formula of MX2（M = Mo, W; X = O, S, Se, Te） in both monolayer and bilayer structures. The calculated band structures show a direct band gap for monolayer TMDCs at the K point except for MoO2 and WO2. When the monolayers are stacked into a bilayer, the reduced indirect band gaps are found except for bilayer WTe2, in which the direct gap is still present at the K point. The calculated in-plane Young moduli are comparable to that of graphene, which promises possible application of TMDCs in future flexible and stretchable electronic devices. We also evaluated the performance of different functionals including LDA, PBE, and opt B88-vd W in describing elastic moduli of TMDCs and found that LDA seems to be the most qualified method. Moreover, our calculations suggest that the Young moduli for bilayers are insensitive to stacking orders and the mechanical coupling between monolayers seems to be negligible.
基金the Natural Science Foundation of China(Nos.51991340 and 51991344)the National Key Research and Development Program of China(Nos.2017YFA0205700 and 2017YFA0304600)the Open Research Fund Program of the State Key Laboratory of Low-dimensional Quantum Physics(No.KF201907).
文摘Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductors not only hold great promises for the development of ultra-thin optoelectronic devices with low-energy consumption,but also provide ideal platforms to explore and tailor light-matter interaction,e.g.,the exciton-photon interaction,at the atomic level,due to their atomic thickness,large exciton binding energy,and unique valley properties.In recent years,the exciton-photon interactions in TMDC semiconductor microcavities,including the strong exciton-photon coupling and lasing,have drawn increasing attention,which may open up new application prospects for transparent,on-chip coherent,and quantum light sources.Herein,we review the research progresses of strong exciton-photon interaction and lasing of TMDC semiconductors.First,we introduce the electronic structure,exciton,and emission properties of semiconducting TMDCs in the weak exciton-photon coupling regime.Next,the progresses on strong exciton-photon interaction and exciton-polaritons of these TMDCs are discussed from the aspects of photophysics,materials and fabrications,spectroscopies,and controls.Further,the progresses on TMDC lasers are introduced in the aspects of cavity types and materials,and finally,the challenges and prospects for these fields are discussed.
基金Ministry of Education—Singapore,Grant/Award Number:MOE2018‐T3‐1‐005。
文摘Two‐dimensional transition metal dichalcogenides(TMDs)play host to a wide range of novel topological states,such as quantum spin Hall insulators,superconductors,and Weyl semimetals.The rich polymorphism in TMDs suggests that phase engineering can be used to switch between different charge order states.Intercalation of atoms or molecules into the van der Waals gap of TMDs has emerged as a powerful approach to modify the properties of the material,leading to phase transition or the formation of substoichiometric phases via compositional tuning,thus broadening the electronic and optical landscape of these materials for a wide range of applications.Here,we review the current efforts in the preparation of intercalated TMD.The challenges and opportunities for intercalated TMDs to create a new device paradigm for material science are discussed.
基金the National Key R&D Program of China(Grant 2018YFA0306900)National Natural Science Foundation of China(Grant 51872012).
文摘As the crystal quality and phase structure of two-dimensional(2D)transition metal dichalcogenides(TMDs)have significant impacts on their properties such as electroconductivity,superconductivity and chemical stability,the precise synthesis,which plays an important role in fundamental researches and industrial applications,is highly required.Group VI TMDs,such as MoS_(2),usually exhibit diverse polymorphs including semiconducting 1H and metallic 1T phases.Even great efforts are devoted to revealing the structure-dependent physicochemical nature of TMDs by modulating their phases from the stable to the metastable at the atomic scale,there are still challenges on the phase-controlled synthesis of Group VI TMDs with metallic or semimetal properties.In this review,methods such as ion intercalation,chemical doping,strain engineering,defect triggering,and electric-field treatment are examined in detail.Finally,challenges and opportunities in this research field are proposed.
基金S.Y.and X.L.acknowledge the support from the National Natural Science Foundation of China(Grant Nos.12121004 and 12004391)the China Postdoctoral Science Foundation(Grants Nos.2020T130682 and 2019M662752)+6 种基金the Science and Technology Department of Hubei Province(Grant No.2020CFA029)the Knowledge Innovation Program of Wuhan-Shuguang Project.T.J.acknowledges the support from the National Natural Science Foundation of China(Grant Nos.62175188 and 62005198)the Shanghai Science and Technology Innovation Action Plan Project(Grant No.23ZR1465800)X.C.acknowledges support from the National Natural Science Foundation of China(Grant Nos.61925504,62020106009,and 6201101335)Science and Technology Commission of Shanghai Municipality(Grant Nos.17JC1400800,20JC1414600,and 21JC1406100)the Special Development Funds for Major Projects of Shanghai Zhangjiang National Independent Innovation Demonstration Zone(Grant No.ZJ2021-ZD-008)D.H.acknowledges the support from the Fundamental Research Funds for the Central Universities.
文摘Exciton physics in atomically thin transition-metal dichalcogenides(TMDCs)holds paramount importance for fundamental physics research and prospective applications.However,the experimental exploration of exciton physics,including excitonic coherence dynamics,exciton many-body interactions,and their optical properties,faces challenges stemming from factors such as spatial heterogeneity and intricate many-body effects.In this perspective,we elaborate upon how optical two-dimensional coherent spectroscopy(2DCS)emerges as an effective tool to tackle the challenges,and outline potential directions for gaining deeper insights into exciton physics in forthcoming experiments with the advancements in 2DCS techniques and new materials.
