Chalcostibite(CuSbS2)is composed of earth-abundant elements and has a proper band gap(Eg=1.05 eV)as a thermoelectric(TE)material.Herein,we report the TE properties in the CuSbS2 based composites with a mole ratio of(1...Chalcostibite(CuSbS2)is composed of earth-abundant elements and has a proper band gap(Eg=1.05 eV)as a thermoelectric(TE)material.Herein,we report the TE properties in the CuSbS2 based composites with a mole ratio of(1–x)CuSbS2–x Cu1.8S(x=0,0.1,0.2,0.3),which were prepared by mechanical alloying(MA)combined with spark plasma sintering(SPS).X-ray diffraction(XRD)and back-scattered electron image(BSE)results indicate that a single phase of CuSbS2 is synthesized at x=0 and the samples consist of CuSbS2,Cu3SbS4,and Cu12Sb4S13 at 0.1≤x≤0.3.The correlation between the phase structure,microstructure,and TE transport properties of the bulk samples is established.The electrical conductivity increases from 0.14 to 50.66 S·cm–1 at 723 K and at0≤x≤0.03,while the Seebeck coefficient holds an appropriate value of 190.51μV·K–1.The highest ZT value of 0.17 is obtained at 723 K and at x=0.3 owing to the combination of a high PF183μW·m–1·K–2 and a lowκ0.8 W·m–1·K–1.展开更多
Thin-film solar cells show considerable application potential as alternative photovoltaic technologies.Cuprous antimony chalcogen materials and their derivatives,represented as CuSbS_(2) and CuPbSbS_(3),respectively,e...Thin-film solar cells show considerable application potential as alternative photovoltaic technologies.Cuprous antimony chalcogen materials and their derivatives,represented as CuSbS_(2) and CuPbSbS_(3),respectively,exhibit the advantages of low cost,massive elemental abundance,stability,and good photoelectric properties,including a suitable bandgap and large optical absorption coefficient.These advantages demonstrate that they can be used as light absorbers in photovoltaic applications.In this study,we review the major properties,fabrication methods,and recent progress of the performance of the devices containing CuSbS_(2) and CuPbSbS_(3).Furthermore,the limitations and future development prospects with respect to the CuSbS_(2) and CuPbSbS_(3) solar cells are discussed.展开更多
基金supported by National Key R&D Program of China (Grant No. 2018YFB0703600)the National Natural Science Foundation of China (Grant No. 11474176)
文摘Chalcostibite(CuSbS2)is composed of earth-abundant elements and has a proper band gap(Eg=1.05 eV)as a thermoelectric(TE)material.Herein,we report the TE properties in the CuSbS2 based composites with a mole ratio of(1–x)CuSbS2–x Cu1.8S(x=0,0.1,0.2,0.3),which were prepared by mechanical alloying(MA)combined with spark plasma sintering(SPS).X-ray diffraction(XRD)and back-scattered electron image(BSE)results indicate that a single phase of CuSbS2 is synthesized at x=0 and the samples consist of CuSbS2,Cu3SbS4,and Cu12Sb4S13 at 0.1≤x≤0.3.The correlation between the phase structure,microstructure,and TE transport properties of the bulk samples is established.The electrical conductivity increases from 0.14 to 50.66 S·cm–1 at 723 K and at0≤x≤0.03,while the Seebeck coefficient holds an appropriate value of 190.51μV·K–1.The highest ZT value of 0.17 is obtained at 723 K and at x=0.3 owing to the combination of a high PF183μW·m–1·K–2 and a lowκ0.8 W·m–1·K–1.
基金supported by the National Natural Science Foundation of China (21872116)the Mobility Program of the SinoGerman Center for research Promotion (M-0377)China Scholarship Council。
文摘硫化锑铜(CuSbS_(2))是一种p型半导体,带隙为1.5 eV,同时拥有较大的光吸收系数(>105cm-1),因此在光电催化领域拥有广阔的应用前景.但是目前国内外的研究还缺乏对CuSbS_(2)电子结构以及其如何影响PEC性能的深入理解.为了进一步改善CuSbS_(2)的PEC性能,对其电子结构进行一系列表征分析是非常重要的.本文中,我们利用同步辐射技术揭示了CuSbS_(2)的电子结构.结果表明,CuSbS_(2)的价带(VB)由S 3p和Cu 3d的强杂交态组成,同时Sb 5p/5s也有部分影响.基于以上理论指导,我们设计了一种高质量Cu Sb S_(2)薄膜的制备技术,并使用FTO/CuSbS_(2)/CdS/Pt光电阴极在0.0 V下实现了CuSbS_(2)基材料的高光电流密度(6.3 mA cm^(-2)).
基金the National Natural Science Foundation of China(Grant Nos.61725401,and 61904058)the National Key R&D Program of China(No.2016YFA0204000)+2 种基金the China Postdoctoral Science Foundation(Nos.2018M642825 and 2019M662623)the National Postdoctoral Program for Innovative Talent(No.BX20190127)the HUST Key Innovation Team for Interdisciplinary Promotion(Nos.2016JCTD111 and 2017KFXKJC003).
文摘Thin-film solar cells show considerable application potential as alternative photovoltaic technologies.Cuprous antimony chalcogen materials and their derivatives,represented as CuSbS_(2) and CuPbSbS_(3),respectively,exhibit the advantages of low cost,massive elemental abundance,stability,and good photoelectric properties,including a suitable bandgap and large optical absorption coefficient.These advantages demonstrate that they can be used as light absorbers in photovoltaic applications.In this study,we review the major properties,fabrication methods,and recent progress of the performance of the devices containing CuSbS_(2) and CuPbSbS_(3).Furthermore,the limitations and future development prospects with respect to the CuSbS_(2) and CuPbSbS_(3) solar cells are discussed.
