The effects of annealing temperatre on the electrical conducitivity and mechanical property of Cu-Te alloys were studied via an AG-10TA electronic universal machine, an SB2230 digital electric bridge, SEM, EDS and XPS...The effects of annealing temperatre on the electrical conducitivity and mechanical property of Cu-Te alloys were studied via an AG-10TA electronic universal machine, an SB2230 digital electric bridge, SEM, EDS and XPS. The results show the electrical conductivity increases while the tensile strength fluctuates when the annealing temperature becomes higher because the recrystallization occurs during the annealing process, leading to the density of dislocation decreasing, grain size growing up, but the second phase precipitating sufficiently and simultaneously.展开更多
The microstructure,mechanical performance,and electrical conductivity of Cu-Te alloy fabricated by continuous extrusion were quantitatively investigated.The results demonstrate that the grain size of the Cu-Te alloy i...The microstructure,mechanical performance,and electrical conductivity of Cu-Te alloy fabricated by continuous extrusion were quantitatively investigated.The results demonstrate that the grain size of the Cu-Te alloy is refined significantly by incomplete dynamic recrystallization.The Cu2Te phase stimulates recrystallization and inhibits subgrain growth.After extrusion,the tensile strength increases from217.8±4.8 MPa to 242.5±3.7 MPa,the yield strength increases from 65.1±3.5 MPa to 104.3±3.8 MPa,and the yield to tensile strength ratio is improved from 0.293±0.015 to 0.43±.0.091,while the electrical conductivity of room temperature decreases from 95.8±0.38%International Annealed Cu Standard(IACS)to 94.0%±0.32%IACS.The quantitative analysis shows that the increment caused by dislocation strengthening and boundary strengthening account for 84.6%of the yield strength of the extruded Cu-Te alloy and the electrical resistivity induced by grain boundaries and dislocations accounts for 1.6%of the electrical resistivity of the extruded Cu-Te alloy.Dislocations and boundaries contribute greatly to the increase of yield strength,but less to the increase of electrical resistivity.展开更多
The effects of annealing process on the electrical conductivity and mechanical properties of Cu-Te alloys were studied via AG-10TA electronic universal machine, SB2230 digital electric bridge, SEM and EDS. The results...The effects of annealing process on the electrical conductivity and mechanical properties of Cu-Te alloys were studied via AG-10TA electronic universal machine, SB2230 digital electric bridge, SEM and EDS. The results show that recrystallization and precipitation occur simultaneously during the annealing process of Cu-Te alloys. Tellurium precipitates as Cu2Te second phase. The grain size increases with the increasing of annealing temperature and time. The electrical conductivity increases monotonously. The tensile strength of Cu-Te alloy is higher than that of pure copper.展开更多
A new two-dimensional atomic crystal, monolayer cuprous telluride（Cu2Te） has been fabricated on a grapheneSi C（0001） substrate by molecular beam epitaxy（MBE）. The low-energy electron diffraction（LEED） characte...A new two-dimensional atomic crystal, monolayer cuprous telluride（Cu2Te） has been fabricated on a grapheneSi C（0001） substrate by molecular beam epitaxy（MBE）. The low-energy electron diffraction（LEED） characterization shows that the monolayer Cu2Te forms ■ superstructure with respect to the graphene substrate. The atomic structure of the monolayer Cu2Te is investigated through a combination of scanning tunneling microscopy（STM） experiments and density functional theory（DFT） calculations. The stoichiometry of the Cu2Te sample is verified by x-ray photoelectron spectroscopy（XPS） measurement. The angle-resolved photoemission spectroscopy（ARPES） data present the electronic band structure of the sample, which is in good agreement with the calculated results. Furthermore, air-exposure experiments reveal the chemical stability of the monolayer Cu2Te. The fabrication of this new 2D material with a particular structure may bring new physical properties for future applications.展开更多
Binary Cu-based chalcogenide thermoelectric materials have attracted a great deal of attention due to their outstanding physical properties and fascinating phase sequence.However,the relatively low figure of merit z T...Binary Cu-based chalcogenide thermoelectric materials have attracted a great deal of attention due to their outstanding physical properties and fascinating phase sequence.However,the relatively low figure of merit z T restricts their practical applications in power generation.A general approach to enhancing z T value is to produce nanostructured grains,while one disadvantage of such a method is the expansion of grain size in heating-up process.Here,we report a prominent improvement of z T in Cu2Te（0.2）Se（0.8）,which is several times larger than that of the matrix.This significant enhancement in thermoelectric performance is attributed to the formation of abundant porosity via cold press.These pores with nano-to micrometer size can manipulate phonon transport simultaneously,resulting in an apparent suppression of thermal conductivity.Moreover,the Se substitution triggers a rapid promotion of power factor,which compensates for the reduction of electrical properties due to carriers scattering by pores.Our strategy of porosity engineering by phonon scattering can also be highly applicable in enhancing the performances of other thermoelectric systems.展开更多
基金Funded by the National Natural Science Foundation of China(No. 50201010)Doctoral Subject Foundation of Ministry of Education (No. 20010610013)
文摘The effects of annealing temperatre on the electrical conducitivity and mechanical property of Cu-Te alloys were studied via an AG-10TA electronic universal machine, an SB2230 digital electric bridge, SEM, EDS and XPS. The results show the electrical conductivity increases while the tensile strength fluctuates when the annealing temperature becomes higher because the recrystallization occurs during the annealing process, leading to the density of dislocation decreasing, grain size growing up, but the second phase precipitating sufficiently and simultaneously.
基金the National Key Research and Development Program of China(No.2018YFB2001800)Key Scientific and Technological Project in Liaoning Province of China in 2021(No.2021JH/10400080)Dalian High Level Talent Innovation Support Program in Liaoning Province of China in 2021(No.2021RD06)。
文摘The microstructure,mechanical performance,and electrical conductivity of Cu-Te alloy fabricated by continuous extrusion were quantitatively investigated.The results demonstrate that the grain size of the Cu-Te alloy is refined significantly by incomplete dynamic recrystallization.The Cu2Te phase stimulates recrystallization and inhibits subgrain growth.After extrusion,the tensile strength increases from217.8±4.8 MPa to 242.5±3.7 MPa,the yield strength increases from 65.1±3.5 MPa to 104.3±3.8 MPa,and the yield to tensile strength ratio is improved from 0.293±0.015 to 0.43±.0.091,while the electrical conductivity of room temperature decreases from 95.8±0.38%International Annealed Cu Standard(IACS)to 94.0%±0.32%IACS.The quantitative analysis shows that the increment caused by dislocation strengthening and boundary strengthening account for 84.6%of the yield strength of the extruded Cu-Te alloy and the electrical resistivity induced by grain boundaries and dislocations accounts for 1.6%of the electrical resistivity of the extruded Cu-Te alloy.Dislocations and boundaries contribute greatly to the increase of yield strength,but less to the increase of electrical resistivity.
基金Project(50201010) supported by the National Natural Science Foundation of China Project(20010610013) supported by Dectoral Subject Foundation of Ministry of Eduction
文摘The effects of annealing process on the electrical conductivity and mechanical properties of Cu-Te alloys were studied via AG-10TA electronic universal machine, SB2230 digital electric bridge, SEM and EDS. The results show that recrystallization and precipitation occur simultaneously during the annealing process of Cu-Te alloys. Tellurium precipitates as Cu2Te second phase. The grain size increases with the increasing of annealing temperature and time. The electrical conductivity increases monotonously. The tensile strength of Cu-Te alloy is higher than that of pure copper.
基金Project supported by the National Key Research&Development Program of China(Grant Nos.2016YFA0202300 and 2018YF A0305800)the National Natural Science Foundation of China(Grant Nos.61888102,11604373,61622116,and 51872284)+2 种基金the CAS Pioneer Hundred Talents Program,China,the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)Beijing Nova Program,China(Grant No.Z181100006218023)the University of Chinese Academy of Sciences
文摘A new two-dimensional atomic crystal, monolayer cuprous telluride（Cu2Te） has been fabricated on a grapheneSi C（0001） substrate by molecular beam epitaxy（MBE）. The low-energy electron diffraction（LEED） characterization shows that the monolayer Cu2Te forms ■ superstructure with respect to the graphene substrate. The atomic structure of the monolayer Cu2Te is investigated through a combination of scanning tunneling microscopy（STM） experiments and density functional theory（DFT） calculations. The stoichiometry of the Cu2Te sample is verified by x-ray photoelectron spectroscopy（XPS） measurement. The angle-resolved photoemission spectroscopy（ARPES） data present the electronic band structure of the sample, which is in good agreement with the calculated results. Furthermore, air-exposure experiments reveal the chemical stability of the monolayer Cu2Te. The fabrication of this new 2D material with a particular structure may bring new physical properties for future applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51771126 and 11774247)the Youth Foundation of Science and Technology Department of Sichuan Province,China(Grant No.2016JQ0051)+2 种基金Sichuan University Outstanding Young Scholars Research Funding(Grant No.2015SCU04A20)the World First-Class University Construction Fundingthe Fundamental and Frontier Research Project in Chongqing(Grant No.CSTC2015JCYJBX0026)
文摘Binary Cu-based chalcogenide thermoelectric materials have attracted a great deal of attention due to their outstanding physical properties and fascinating phase sequence.However,the relatively low figure of merit z T restricts their practical applications in power generation.A general approach to enhancing z T value is to produce nanostructured grains,while one disadvantage of such a method is the expansion of grain size in heating-up process.Here,we report a prominent improvement of z T in Cu2Te（0.2）Se（0.8）,which is several times larger than that of the matrix.This significant enhancement in thermoelectric performance is attributed to the formation of abundant porosity via cold press.These pores with nano-to micrometer size can manipulate phonon transport simultaneously,resulting in an apparent suppression of thermal conductivity.Moreover,the Se substitution triggers a rapid promotion of power factor,which compensates for the reduction of electrical properties due to carriers scattering by pores.Our strategy of porosity engineering by phonon scattering can also be highly applicable in enhancing the performances of other thermoelectric systems.
