CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were inves...CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.展开更多
The effect of annealing treatment on the structure of CdS films was investigated. The cadmium sulfide thin films were prepared by chemical bath deposition, and were annealed at nitrogen atmosphere at different tempera...The effect of annealing treatment on the structure of CdS films was investigated. The cadmium sulfide thin films were prepared by chemical bath deposition, and were annealed at nitrogen atmosphere at different temperatures. The films were characterized by SEM and XPS (X-ray photoelectron spectroscopy). X-ray photoelectron spectroscopy was used to examine the chemical states on the CdS films surface. It was found that thermal annealing could produce large grains of CdS thin films, remove the air contamination and reduce the oxygen content on the CdS films surface. Therefore, the CdS films changed more uniform and smoother surface after thermal annealing.展开更多
文摘CdS thin films were deposited by the ion layer gas reaction (TLGAR) method.Structural, chemical, topographical development as well as optical and electrical properties ofas-deposited and annealed thin films were investigated by XRD, SEM, XPS, AFM and UV-VIS. The resultsshowed that the thin films are uniform, compact and good in adhesion to the substrates, and thegrowth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structureto the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. Anamount of C, O and Cl impurities can be reduced by increasing the drying temperature or byannealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higherwavelength after annealing or increasing film thickness. The electrical resistivity decreases withincreasing annealing temperature and film thickness.
基金The financial support was provided by the National High Technology Research and Development Program of China(Grant No.2001AA513011).
文摘The effect of annealing treatment on the structure of CdS films was investigated. The cadmium sulfide thin films were prepared by chemical bath deposition, and were annealed at nitrogen atmosphere at different temperatures. The films were characterized by SEM and XPS (X-ray photoelectron spectroscopy). X-ray photoelectron spectroscopy was used to examine the chemical states on the CdS films surface. It was found that thermal annealing could produce large grains of CdS thin films, remove the air contamination and reduce the oxygen content on the CdS films surface. Therefore, the CdS films changed more uniform and smoother surface after thermal annealing.
