Ce and W co-doped CaBi_(2)Nb_(2)O_(9) ceramics with chemical formula Ca_(0.96)Ce_(0.04)Bi_(2)Nb_(2-x)W_(x)O_(9)(CCBNW100x,x=0-0.07)are fabricated via conventional solid state sintering method,to investigate the effect...Ce and W co-doped CaBi_(2)Nb_(2)O_(9) ceramics with chemical formula Ca_(0.96)Ce_(0.04)Bi_(2)Nb_(2-x)W_(x)O_(9)(CCBNW100x,x=0-0.07)are fabricated via conventional solid state sintering method,to investigate the effect of W addition on the structure,electrical resistivity,dielectric and piezoelectric properties.A piezoelectric constant d33 of 13.4 pC/N is obtained in CCBN-W2 ceramics,>100% higher than that of pure CaBi_(2)Nb_(2)O_(9)(d_(33)=5.8e6.4 pC/N).Of particular significance is that the electrical resistivity of CCBN-W2 ceramics(r=3.7×109 U cm at 500℃)is three orders of magnitude higher than pure CaBi_(2)Nb_(2)O_(9)(r=2.9×10^(6) U cm at same temperature).All these properties,together with its low dielectric loss(tandδ0.13%)and excellent d33 thermal stability up to 800℃,merit the CCBN-W2 ceramics for high temperature piezoelectric sensing applications.展开更多
CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with...CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.展开更多
基金financially supported by National Natural Science Foundation of China(61671224)and Science Foundation of Jiangxi Provincial Education Department of China(GJJ160919)the“Bairen Yuanhang”Project funding supported by Jiangxi Science and Technology Association.
文摘Ce and W co-doped CaBi_(2)Nb_(2)O_(9) ceramics with chemical formula Ca_(0.96)Ce_(0.04)Bi_(2)Nb_(2-x)W_(x)O_(9)(CCBNW100x,x=0-0.07)are fabricated via conventional solid state sintering method,to investigate the effect of W addition on the structure,electrical resistivity,dielectric and piezoelectric properties.A piezoelectric constant d33 of 13.4 pC/N is obtained in CCBN-W2 ceramics,>100% higher than that of pure CaBi_(2)Nb_(2)O_(9)(d_(33)=5.8e6.4 pC/N).Of particular significance is that the electrical resistivity of CCBN-W2 ceramics(r=3.7×109 U cm at 500℃)is three orders of magnitude higher than pure CaBi_(2)Nb_(2)O_(9)(r=2.9×10^(6) U cm at same temperature).All these properties,together with its low dielectric loss(tandδ0.13%)and excellent d33 thermal stability up to 800℃,merit the CCBN-W2 ceramics for high temperature piezoelectric sensing applications.
基金the financial support of the National Natural Science Foundation of China(Grant Nos.51772175 and 51872166)the Nano Projects of Suzhou City(Grant No.ZXG201445)+2 种基金the support from the Seed Funding for Top Talents in Qilu University of Technology(Shandong Academy of Sciences)the International Cooperation Research Project of Qilu University of Technology(Grant No.QLUTGJHZ2018003)the Independent Innovation Foundation of Shandong University(Grant Nos.2018JC045 and 2017ZD008).
文摘CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.
