Development of the nano-electronics requires materials with both high carrier mobility and a sufficiently large electronic band gap.In this work,by means of ab initio calculations,we have predicted a new 2D Ca2Si mono...Development of the nano-electronics requires materials with both high carrier mobility and a sufficiently large electronic band gap.In this work,by means of ab initio calculations,we have predicted a new 2D Ca2Si monolayer with a quasi-planar hexa-coordinate structure.The geometrical structure,stability and electronic properties of Ca2Si monolayer have been systemically investigated.The Ca2Si monolayer is an indirect semiconductor with band gap of about 0.77 eV,which exhibits stable chemical bonding interactions as well as thermal and dynamic stability.Moreover,the carrier mobility in Ca2Si monolayer is electron dominated with a high electron mobility about 4590.47 cm2×V-1×s-1.It is excited that the 2D Ca2Si monolayer exhibits strong directionally anisotropic carrier mobility,which could effectively facilitate the migration and separation of the generated electron-hole pairs.Our calculations demonstrate that the 2D Ca2Si monolayer is potential for high efficiency solar cells and other nano-electronic applications.展开更多
基金National Natural Science Foundation of China(60766002)Foundation of Science Technology Department of Guizhou Province((2007)2177)+1 种基金Key Foundation of Education Department of Guizhou(2006212)Carving out Foundation of University Man of Science and Technology Office of Guiyang((2006)21-4).
基金Natural Science Foundation of Guizhou Province Education Department([2015]428)The Science and Technology Foundation of Guizhou Province(LH[2015]7218,LH[2016]7077)+1 种基金The Youth Science and Technology Talents Growth Fund Program of Guizhou province Education Department(KY[2016]166)Innovation Group Major Program of Guizhou Province(KY[2016]029)
基金National Natural Science Foundation of China(60766002)the Foundation of Science Technology Department of Guizhou Province((2007)2177)+1 种基金the Key Foundation of Education Department of Guizhou(2006212)The specific Foundation of the High-level Talents of Guizhou Province
基金Supported by the Foundation of the National Natural Science Foundation of China (60766002)the Science Technology Depart-ment of Guizhou Province (2007 -2177)+2 种基金the Key Foundation of Education Department of Guizhou (2006212)the Specific Foundation of the High-level Talents of Guizhou Provincethe Carving out Foundation of University Man of Science and Tech-nology Office of Guiyang(2006212)
基金Natural Science Foundation of Guizhou Province Education Department([2015]428)Science and Technology Foundation of Guizhou Province,China([2015]7218,LH[2016]7077)+1 种基金Youth Science and Technology Talents Growth Fund Program of Guizhou Province Education Department,China(KY[2016]166)Innovation Group Major Program of Guizhou Province(KY[2016]029)
基金Supported by the National Key Research and Development Program of China(No.2017YFB0701700)the National Natural Science Foundation of China(No.21973012)the Natural Science Foundation of Fujian Province(No.2016J05003)。
文摘Development of the nano-electronics requires materials with both high carrier mobility and a sufficiently large electronic band gap.In this work,by means of ab initio calculations,we have predicted a new 2D Ca2Si monolayer with a quasi-planar hexa-coordinate structure.The geometrical structure,stability and electronic properties of Ca2Si monolayer have been systemically investigated.The Ca2Si monolayer is an indirect semiconductor with band gap of about 0.77 eV,which exhibits stable chemical bonding interactions as well as thermal and dynamic stability.Moreover,the carrier mobility in Ca2Si monolayer is electron dominated with a high electron mobility about 4590.47 cm2×V-1×s-1.It is excited that the 2D Ca2Si monolayer exhibits strong directionally anisotropic carrier mobility,which could effectively facilitate the migration and separation of the generated electron-hole pairs.Our calculations demonstrate that the 2D Ca2Si monolayer is potential for high efficiency solar cells and other nano-electronic applications.
