With more scaling, the speed of than 40 years Moore CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-effici...With more scaling, the speed of than 40 years Moore CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-efficient operation, 60 GHz CMOS RF transceiver faces severe challenges. After reviewing the technology issues, regarding the 60 GHz applications, this paper discusses design challenges both from the system and the building block levels, and also presents some simulated or measured circuits results.展开更多
The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-bas...The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.展开更多
采用DOE(Design of Experiment)试验方法进行了CMOS晶体管工艺流片的分卡操作,研究18个样品的Vt区注入Dvt、N场注入DNF、TEMP注入DP这3种注入剂量变化的情形下阈值电压Vtn和Vtp的调控优化值。通过最大跨导法测试阈值电压Vtn和Vtp,考查3...采用DOE(Design of Experiment)试验方法进行了CMOS晶体管工艺流片的分卡操作,研究18个样品的Vt区注入Dvt、N场注入DNF、TEMP注入DP这3种注入剂量变化的情形下阈值电压Vtn和Vtp的调控优化值。通过最大跨导法测试阈值电压Vtn和Vtp,考查3种注入剂量对Vtn和Vtp的影响趋势,发现Dvt和DNF直接决定Vtn,Dvt和DP直接决定Vtp。结果表明,Vtn为0.082 V^0.600 V,关系式为Vtn=0.15791Dvt+0.12320DNF+0.11433;Vtp为0.0535 V^0.6300 V,关系式为V2tp=-0.03077D2vt-0.01688D2P+0.71899。展开更多
On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating fro...On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.展开更多
This paper describes a new approach for designing analog predistorters that can compensate for the nonlinear distortion of laser drivers in a radio-over-fiber （RoF） system. In contrast to previous works, this paper ...This paper describes a new approach for designing analog predistorters that can compensate for the nonlinear distortion of laser drivers in a radio-over-fiber （RoF） system. In contrast to previous works, this paper analyzes the transfer characteristics of CMOS transistors, by combining parallel currents of CMOS transistors in various W/L and negative bias voltages to realize the tunable analog predistortion function. The circuit is fabricated by a standard 0.18txm CMOS technology. The core circuit current consumption is only 15mA and the entire driver circuit works in a band-pass from 1 - 2.2GHz. Experimental results of two-tone tests have shown that with an analog predistortoer the IIP3 of the laser driver circuit has an improvement of 4.91 dB.展开更多
基金the Project'Design of 60GHz RF CMOS chips and modules'supported by Chinese National High Tech.(863)Plan(2011AA010201 and 2011AA010202)partly supported by National Natural Science Foundation of China(No.61306030)
文摘With more scaling, the speed of than 40 years Moore CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-efficient operation, 60 GHz CMOS RF transceiver faces severe challenges. After reviewing the technology issues, regarding the 60 GHz applications, this paper discusses design challenges both from the system and the building block levels, and also presents some simulated or measured circuits results.
基金Support by the Third World Academy of Sciences (TWAS)the National Natural Science Foundation of China (No.10735060)
文摘The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.
文摘On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.
基金Supported by the National Natural Science Foundation of China(No.61036002)
文摘This paper describes a new approach for designing analog predistorters that can compensate for the nonlinear distortion of laser drivers in a radio-over-fiber （RoF） system. In contrast to previous works, this paper analyzes the transfer characteristics of CMOS transistors, by combining parallel currents of CMOS transistors in various W/L and negative bias voltages to realize the tunable analog predistortion function. The circuit is fabricated by a standard 0.18txm CMOS technology. The core circuit current consumption is only 15mA and the entire driver circuit works in a band-pass from 1 - 2.2GHz. Experimental results of two-tone tests have shown that with an analog predistortoer the IIP3 of the laser driver circuit has an improvement of 4.91 dB.
