The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are differe...The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes＇ recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible.展开更多
In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only w...In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.展开更多
The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-bas...The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.展开更多
采用DOE(Design of Experiment)试验方法进行了CMOS晶体管工艺流片的分卡操作,研究18个样品的Vt区注入Dvt、N场注入DNF、TEMP注入DP这3种注入剂量变化的情形下阈值电压Vtn和Vtp的调控优化值。通过最大跨导法测试阈值电压Vtn和Vtp,考查3...采用DOE(Design of Experiment)试验方法进行了CMOS晶体管工艺流片的分卡操作,研究18个样品的Vt区注入Dvt、N场注入DNF、TEMP注入DP这3种注入剂量变化的情形下阈值电压Vtn和Vtp的调控优化值。通过最大跨导法测试阈值电压Vtn和Vtp,考查3种注入剂量对Vtn和Vtp的影响趋势,发现Dvt和DNF直接决定Vtn,Dvt和DP直接决定Vtp。结果表明,Vtn为0.082 V^0.600 V,关系式为Vtn=0.15791Dvt+0.12320DNF+0.11433;Vtp为0.0535 V^0.6300 V,关系式为V2tp=-0.03077D2vt-0.01688D2P+0.71899。展开更多
介绍了一个峰保持电路。该电路适用于silicon strip,Si(Li),CdZn Te and CsI等探测器,实现采样-保持功能。已成功进行了基于CMOSFET的采样-保持电路的设计和仿真,通过使用Proteus的PSPICE仿真器和BSIMV3.3模型参数完成了电路性能的仿真...介绍了一个峰保持电路。该电路适用于silicon strip,Si(Li),CdZn Te and CsI等探测器,实现采样-保持功能。已成功进行了基于CMOSFET的采样-保持电路的设计和仿真,通过使用Proteus的PSPICE仿真器和BSIMV3.3模型参数完成了电路性能的仿真。同时,实现了采样时间可在60ns到4.44s范围内进行选择,该电路具有较好的线性。展开更多
A novel pulse stream neuron circuit is presented whose output pulse width facilitates sigmoid activation to activate the function of neurons. The wide symmetrical dynamic range of this neuron ensures high noise immuni...A novel pulse stream neuron circuit is presented whose output pulse width facilitates sigmoid activation to activate the function of neurons. The wide symmetrical dynamic range of this neuron ensures high noise immunity. The pulsed activation strategy provides a power efficient architecture, so the circuit has very low power dissipation. The simplicity of the circuit ensures its suitability for large-scale integration.展开更多
文摘The total ionizing dose（TID） response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad（SiO_2） total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes＇ recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible.
基金National Natural Science Fundation of China (10675153)in part by the Third World Academy of Sciencesin part by the Institute of Modern Physics, Chinese Academy of Sciences
文摘In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.
基金Support by the Third World Academy of Sciences (TWAS)the National Natural Science Foundation of China (No.10735060)
文摘The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip,Si(Li),CdZnTe and CsI detectors,etc.,which can be further integrated the whole system and adopted to develop CMOS-based application,specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics,particle physics and astrophysics research,etc.It's why we used only CMOS transistor to develop the entire system.A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC4 filter,we perform shaping time in the range,465 ns to 2.76μs with a low output resistance and the linearity almost good.
基金National Natural Science Foundation of China(10735060)Fund of Third World Academy of Sciences~~
文摘介绍了一个峰保持电路。该电路适用于silicon strip,Si(Li),CdZn Te and CsI等探测器,实现采样-保持功能。已成功进行了基于CMOSFET的采样-保持电路的设计和仿真,通过使用Proteus的PSPICE仿真器和BSIMV3.3模型参数完成了电路性能的仿真。同时,实现了采样时间可在60ns到4.44s范围内进行选择,该电路具有较好的线性。
基金Supported by the National Natural Science Foundationof China (No.6963 60 3 0)
文摘A novel pulse stream neuron circuit is presented whose output pulse width facilitates sigmoid activation to activate the function of neurons. The wide symmetrical dynamic range of this neuron ensures high noise immunity. The pulsed activation strategy provides a power efficient architecture, so the circuit has very low power dissipation. The simplicity of the circuit ensures its suitability for large-scale integration.
