基于Ga N高电子迁移率晶体管（HEMT）技术,研制了在0.8-4 GHz频率下,输出功率大于50 W的宽带平衡式功率放大器。采用3 d B耦合器电桥构建平衡式功率放大器结构;采用多节阻抗匹配技术设计了输入/输出匹配网络,实现了功率放大器的宽带特性...基于Ga N高电子迁移率晶体管（HEMT）技术,研制了在0.8-4 GHz频率下,输出功率大于50 W的宽带平衡式功率放大器。采用3 d B耦合器电桥构建平衡式功率放大器结构;采用多节阻抗匹配技术设计了输入/输出匹配网络,实现了功率放大器的宽带特性;采用高介电常数Al2O3基材实现了小型化功率放大器单元;采用热膨胀系数与Si C接近的铜-钼-铜载板作为Ga N HEMT管芯共晶载体,防止功率管芯高温工作过程中因为热膨胀而烧毁。测试结果表明,在0.8-4 GHz频带内,功率放大器功率增益大于6.4 d B,增益平坦度为±1.5 d B,饱和输出功率值大于58.2 W,漏极效率为41%-62%。展开更多
基于第三代半导体Ga N的高电子迁移率晶体管技术,利用Cree CGH4001O管芯大信号模型并结合ADS2009U1软件,结合商用Ga N管芯的自身特性,采用微带-电阻-微带-电容-微带的负反馈回路和整体负载牵引方法及宽带匹配网络,成功设计并实现了30-2 ...基于第三代半导体Ga N的高电子迁移率晶体管技术,利用Cree CGH4001O管芯大信号模型并结合ADS2009U1软件,结合商用Ga N管芯的自身特性,采用微带-电阻-微带-电容-微带的负反馈回路和整体负载牵引方法及宽带匹配网络,成功设计并实现了30-2 600 MHz超过6个倍频程的超宽带功率放大器。测试结果表明,该功率放大器的带内线性增益大于11.8 d B,线性增益平坦度小于±0.95 d B,输入回波小于-10.2 d B,1 d B压缩点输出功率大于36.5 d Bm,功率附加效率大于22%,饱和时输出功率大于39.1 d Bm,功率附加效率大于28%。该功率放大器在很宽的频带内有着平坦的增益,适用于对平坦度要求较高的超宽带系统中。展开更多
提出一种高效宽带功率放大器的设计方法,并基于Ga N HEMT器件CGH40010F设计了验证电路。利用功放管输出寄生参数的等效网络,将基于连续型功放理论得到的负载阻抗转换到封装参考面上,并利用多谐波双向牵引技术对转换后的负载阻抗进行适...提出一种高效宽带功率放大器的设计方法,并基于Ga N HEMT器件CGH40010F设计了验证电路。利用功放管输出寄生参数的等效网络,将基于连续型功放理论得到的负载阻抗转换到封装参考面上,并利用多谐波双向牵引技术对转换后的负载阻抗进行适当调整,使二次谐波负载阻抗位于高效率区以及基频负载阻抗能够获得高功率附加效率和高输出功率。谐波阻抗位于高效率区使得匹配网络的设计简化为基频匹配网络的设计,降低了对谐波阻抗匹配的难度和宽带匹配网络设计的复杂度。实验结果表明:在1GHz^3GHz工作频带(相对带宽100%)内,功率附加效率在53%~64.6%之间,输出功率为39.5±2d Bm,增益为11.5±2d B,二次谐波小于-15d Bc,三次谐波小于-25d Bc。展开更多
为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结...为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结构加高低阻抗微带线方式进行宽带电路匹配,并设计了末级、级间和输入级的匹配电路拓扑结构;最后,对级间匹配电路进行综合优化调整,并采用兰格桥进行功率合成。最终,放大器在80GHz~140GHz范围内,典型线性增益达18dB,饱和输出功率达100mW,同时,在全频段范围内,芯片具有±1dB的功率平坦度和良好的回波损耗,在太赫兹领域具有广阔的应用前景。展开更多
In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency poi...In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
综述了近几年微波、毫米波氮化镓高电子迁移率晶体管(Ga N HEMT)与单片微波集成电路(MMIC)在高效率、宽频带、高功率和先进热管理等方面的应用创新进展。介绍了基于Ga N HEMT器件所具有的高功率密度和高击穿电压,采用波形工程原理设计...综述了近几年微波、毫米波氮化镓高电子迁移率晶体管(Ga N HEMT)与单片微波集成电路(MMIC)在高效率、宽频带、高功率和先进热管理等方面的应用创新进展。介绍了基于Ga N HEMT器件所具有的高功率密度和高击穿电压,采用波形工程原理设计的各类开关模式的高效率功率放大器,以及基于Ga N HEMT器件的高功率密度、高阻抗的特点与先进的宽带拓扑电路和功率合成技术相结合的宽频带和高功率放大器。详细介绍了微波高端和毫米波段的高效率、宽频带和高功率放大器,多功能电路和多功能集成的Ga N MMIC。最后阐述了由于Ga N HEMT的功率密度是其他半导体器件的数倍,其先进热管理的创新研究也成为热点。展开更多
A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at t...A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node.A compensated matching technique is adopted in interstage matching to expand bandwidth.A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching,which ensures maximum power transfer.An adaptive bias circuit could improve linearity and efficiency in wide output power level.With 2.5 V power supply,the measured results achieve 96% 3-dB bandwidth（517-1470 MHz）,27.2 dB power gain,26.9 dBm maximum output power,19.7 dBm output 1 dB compression point,and 26.7% power added efficiency.展开更多
文摘基于Ga N高电子迁移率晶体管（HEMT）技术,研制了在0.8-4 GHz频率下,输出功率大于50 W的宽带平衡式功率放大器。采用3 d B耦合器电桥构建平衡式功率放大器结构;采用多节阻抗匹配技术设计了输入/输出匹配网络,实现了功率放大器的宽带特性;采用高介电常数Al2O3基材实现了小型化功率放大器单元;采用热膨胀系数与Si C接近的铜-钼-铜载板作为Ga N HEMT管芯共晶载体,防止功率管芯高温工作过程中因为热膨胀而烧毁。测试结果表明,在0.8-4 GHz频带内,功率放大器功率增益大于6.4 d B,增益平坦度为±1.5 d B,饱和输出功率值大于58.2 W,漏极效率为41%-62%。
文摘基于第三代半导体Ga N的高电子迁移率晶体管技术,利用Cree CGH4001O管芯大信号模型并结合ADS2009U1软件,结合商用Ga N管芯的自身特性,采用微带-电阻-微带-电容-微带的负反馈回路和整体负载牵引方法及宽带匹配网络,成功设计并实现了30-2 600 MHz超过6个倍频程的超宽带功率放大器。测试结果表明,该功率放大器的带内线性增益大于11.8 d B,线性增益平坦度小于±0.95 d B,输入回波小于-10.2 d B,1 d B压缩点输出功率大于36.5 d Bm,功率附加效率大于22%,饱和时输出功率大于39.1 d Bm,功率附加效率大于28%。该功率放大器在很宽的频带内有着平坦的增益,适用于对平坦度要求较高的超宽带系统中。
文摘为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结构加高低阻抗微带线方式进行宽带电路匹配,并设计了末级、级间和输入级的匹配电路拓扑结构;最后,对级间匹配电路进行综合优化调整,并采用兰格桥进行功率合成。最终,放大器在80GHz~140GHz范围内,典型线性增益达18dB,饱和输出功率达100mW,同时,在全频段范围内,芯片具有±1dB的功率平坦度和良好的回波损耗,在太赫兹领域具有广阔的应用前景。
基金supported by National Natural Science Foundation of China(No.62001061)。
文摘In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘综述了近几年微波、毫米波氮化镓高电子迁移率晶体管(Ga N HEMT)与单片微波集成电路(MMIC)在高效率、宽频带、高功率和先进热管理等方面的应用创新进展。介绍了基于Ga N HEMT器件所具有的高功率密度和高击穿电压,采用波形工程原理设计的各类开关模式的高效率功率放大器,以及基于Ga N HEMT器件的高功率密度、高阻抗的特点与先进的宽带拓扑电路和功率合成技术相结合的宽频带和高功率放大器。详细介绍了微波高端和毫米波段的高效率、宽频带和高功率放大器,多功能电路和多功能集成的Ga N MMIC。最后阐述了由于Ga N HEMT的功率密度是其他半导体器件的数倍,其先进热管理的创新研究也成为热点。
文摘A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node.A compensated matching technique is adopted in interstage matching to expand bandwidth.A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching,which ensures maximum power transfer.An adaptive bias circuit could improve linearity and efficiency in wide output power level.With 2.5 V power supply,the measured results achieve 96% 3-dB bandwidth（517-1470 MHz）,27.2 dB power gain,26.9 dBm maximum output power,19.7 dBm output 1 dB compression point,and 26.7% power added efficiency.
