Al-doped zinc-oxide （AZO） thin films treated by oxygen and chlorine inductively coupled plasma （ICP） were compared. Kelvin probe （KP） and X-ray photoelectron spectroscopy （XPS） were employed to characterize th...Al-doped zinc-oxide （AZO） thin films treated by oxygen and chlorine inductively coupled plasma （ICP） were compared. Kelvin probe （KP） and X-ray photoelectron spectroscopy （XPS） were employed to characterize the effect of treatment. The results of KP measurement show that the surface work function of AZO thin films can increase up to 5.92 eV after oxygen ICP （O-ICP）＇s treatment, which means that the work function was increased by at least 1.1 eV. However, after the treatment of chlorine ICP （CI-ICP）, the work function increased to 5.44 eV, and the increment was 0.6 eV. And 10 days later, the work function increment was still 0.4 eV after O-ICP＇s treatment, while the work function after Cl-ICP＇s treatment came back to the original value only after 48 hours. The XPS results suggested that the O-ICP treatment was more effective than CI-ICP for enhancing the work function of AZO films, which is well consistent with KP results.展开更多
Al doped zinc oxide （AZO） films were prepared by mid-frequency magnetron sputtering for silicon （Si） thin film solar cells. Then, the influence of deposition parameters on the electrical and optical properties of ...Al doped zinc oxide （AZO） films were prepared by mid-frequency magnetron sputtering for silicon （Si） thin film solar cells. Then, the influence of deposition parameters on the electrical and optical properties of the films was studied. Results showed that high conductive and high transparent AZO thin films were achieved with a minimum resistivity of 2.45 × 10^-4 Ω·cm and optical transmission greater than 85% in visible spectrum region as the films were deposited at a substrate temperature of 225℃ and a low sputtering power of 160 W. The optimized films were applied as back reflectors in a-SiGe：H solar cells. A relative increase of 19% in the solar cell efficiency was achieved in comparison to the cell without the ZnO films doped with Al （ZnO：Al）.展开更多
基金supported by National Natural Science Foundation of China(Nos.1100502151177017 and 11175049)+1 种基金the Fudan University Excellent Doctoral Research Program(985 Project) the Ph.D Programs Foundation of Ministry of Education of China(No.20120071110031)
文摘Al-doped zinc-oxide （AZO） thin films treated by oxygen and chlorine inductively coupled plasma （ICP） were compared. Kelvin probe （KP） and X-ray photoelectron spectroscopy （XPS） were employed to characterize the effect of treatment. The results of KP measurement show that the surface work function of AZO thin films can increase up to 5.92 eV after oxygen ICP （O-ICP）＇s treatment, which means that the work function was increased by at least 1.1 eV. However, after the treatment of chlorine ICP （CI-ICP）, the work function increased to 5.44 eV, and the increment was 0.6 eV. And 10 days later, the work function increment was still 0.4 eV after O-ICP＇s treatment, while the work function after Cl-ICP＇s treatment came back to the original value only after 48 hours. The XPS results suggested that the O-ICP treatment was more effective than CI-ICP for enhancing the work function of AZO films, which is well consistent with KP results.
基金Acknowledgements This work was supported by Key Project of Natural Science Foundation of Hubei Province （No. 2009CBA025）. The authors would like to thank Analytical and Testing Center of Huazhong University of Science and Technology.
文摘Al doped zinc oxide （AZO） films were prepared by mid-frequency magnetron sputtering for silicon （Si） thin film solar cells. Then, the influence of deposition parameters on the electrical and optical properties of the films was studied. Results showed that high conductive and high transparent AZO thin films were achieved with a minimum resistivity of 2.45 × 10^-4 Ω·cm and optical transmission greater than 85% in visible spectrum region as the films were deposited at a substrate temperature of 225℃ and a low sputtering power of 160 W. The optimized films were applied as back reflectors in a-SiGe：H solar cells. A relative increase of 19% in the solar cell efficiency was achieved in comparison to the cell without the ZnO films doped with Al （ZnO：Al）.
