The effect of thermal exposure at 350 ℃ for 200 h on microstructure and mechanical properties was investigated for Al-Si-Cu-Ni-Mg alloy, which was produced by permanent mold casting(PMC) and high pressure die casting...The effect of thermal exposure at 350 ℃ for 200 h on microstructure and mechanical properties was investigated for Al-Si-Cu-Ni-Mg alloy, which was produced by permanent mold casting(PMC) and high pressure die casting(HPDC). The SEM and IPP software were used to characterize the morphology of Si phase in the studied alloys. The results show that the thermal exposure provokes spheroidization and coarsening of eutectic Si particles. The ultimate tensile strength of the HPDC alloy after thermal exposure is higher than that of the PMC alloy at room temperature. However, the TEPMC and TEHPDC alloys have similar tensile strength around 67 MPa at 350 ℃. Due to the coarsening of eutectic Si, the TEPMC alloy exhibits better creep resistance than the TEHPDC alloy under studied creep conditions. Therefore, the alloys with small size of eutectic Si are not suitably used at 350 ℃.展开更多
基金Projects(2016YFB0700502,2016YFB0301001)supported by the National Key Research and Development Program of China。
文摘The effect of thermal exposure at 350 ℃ for 200 h on microstructure and mechanical properties was investigated for Al-Si-Cu-Ni-Mg alloy, which was produced by permanent mold casting(PMC) and high pressure die casting(HPDC). The SEM and IPP software were used to characterize the morphology of Si phase in the studied alloys. The results show that the thermal exposure provokes spheroidization and coarsening of eutectic Si particles. The ultimate tensile strength of the HPDC alloy after thermal exposure is higher than that of the PMC alloy at room temperature. However, the TEPMC and TEHPDC alloys have similar tensile strength around 67 MPa at 350 ℃. Due to the coarsening of eutectic Si, the TEPMC alloy exhibits better creep resistance than the TEHPDC alloy under studied creep conditions. Therefore, the alloys with small size of eutectic Si are not suitably used at 350 ℃.
