Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2...Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response is achieved in the 302-363 nm band. The detector displays an unbiased responsivity of 0.064 A/W at 355 nm. The current-voltage curve shows that current at zero bias is -1.57 × 10^-12 A. This led to a detectivity of 1.81 × 10^11 cm- Hzl/2/W. In the infrared region, the detectivity of the detector is 1.58 × 10^5 cm. Hz1/2/W at 4μm.展开更多
基金Project supported by the National Natural Science Foundation of China(No.60807037)
文摘Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response is achieved in the 302-363 nm band. The detector displays an unbiased responsivity of 0.064 A/W at 355 nm. The current-voltage curve shows that current at zero bias is -1.57 × 10^-12 A. This led to a detectivity of 1.81 × 10^11 cm- Hzl/2/W. In the infrared region, the detectivity of the detector is 1.58 × 10^5 cm. Hz1/2/W at 4μm.
