The g.s. of heavy and superheavy hydrogen isotopes, namely 4-7 H, are successfully examined by applying the Isomorphic Shell Model. Properties examined are binding energies and effective radii. The novelty of the pres...The g.s. of heavy and superheavy hydrogen isotopes, namely 4-7 H, are successfully examined by applying the Isomorphic Shell Model. Properties examined are binding energies and effective radii. The novelty of the present work is that, due to the small number of nucleons involved and the subsequently large deformation, an internal collective rotation appears which is inseparable from the usual internal motion even in the ground states of these nuclei, i.e., for such nuclei the adiabatic approximation is not valid. This extra degree of freedom leads to a reduction of binding energies, an increase of effective radii, and an increase of level widths.展开更多
With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- du...With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.展开更多
The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytica...The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.展开更多
文摘The g.s. of heavy and superheavy hydrogen isotopes, namely 4-7 H, are successfully examined by applying the Isomorphic Shell Model. Properties examined are binding energies and effective radii. The novelty of the present work is that, due to the small number of nucleons involved and the subsequently large deformation, an internal collective rotation appears which is inseparable from the usual internal motion even in the ground states of these nuclei, i.e., for such nuclei the adiabatic approximation is not valid. This extra degree of freedom leads to a reduction of binding energies, an increase of effective radii, and an increase of level widths.
基金Supported by the National Natural Science Foundation of China under Grant No 60606022.
文摘With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.
文摘The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.
