The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopt...The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopted for the device samples,which is much more practical and important for high-temperature applications.The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures.As the temperature increases from room temperature to 425 K,the dark current at 95%of the breakdown voltage increases slightly and remains lower than40 pA.In Geiger mode,our 4H-SiC APDs can be self-quenched in a passive-quenching circuit,which is expected for highspeed detection systems.Moreover,an interesting phenomenon is observed for the first time:the single-photon detection efficiency shows a non-monotonic variation as a function of temperature.The physical mechanism of the variation in hightemperature performance is further analyzed.The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.展开更多
文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型。模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出:减...文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型。模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出:减小P+层厚度、增大N、N+层厚度可有效增大光电流,提高探测器性能。展开更多
Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specif...Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.展开更多
基金the National Natural Science Foundation of China(Grant No.61974134)Hebei Province Outstanding Youth Fund(Grant No.F2021516001).
文摘The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes(APDs)in both linear and Geiger modes is extensively investigated.During the temperature-dependent measurements,a fixed bias voltage is adopted for the device samples,which is much more practical and important for high-temperature applications.The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures.As the temperature increases from room temperature to 425 K,the dark current at 95%of the breakdown voltage increases slightly and remains lower than40 pA.In Geiger mode,our 4H-SiC APDs can be self-quenched in a passive-quenching circuit,which is expected for highspeed detection systems.Moreover,an interesting phenomenon is observed for the first time:the single-photon detection efficiency shows a non-monotonic variation as a function of temperature.The physical mechanism of the variation in hightemperature performance is further analyzed.The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.
文摘文中基于多种理论模型构建了4H-SiC SAM APD结构紫外光电探测器的基本物理模型。模拟研究了包括反向伏安特性、离化率、光谱响应在内的光电效应特性,并通过改变SAM结构各层厚度,得到了厚度与击穿电压、光谱响应的关系,从结果可以看出:减小P+层厚度、增大N、N+层厚度可有效增大光电流,提高探测器性能。
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB0400400)
文摘Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.
