We designed a clamping device to study lateral photovoltaic effect (LPE) in Ni-SiO_(2)-Si structure with bias due to the appropriate barrier height.The LPE has a prominent sensitivity and linearity with 532 nm wavelen...We designed a clamping device to study lateral photovoltaic effect (LPE) in Ni-SiO_(2)-Si structure with bias due to the appropriate barrier height.The LPE has a prominent sensitivity and linearity with 532 nm wavelength laser.The transient response time is 450μs and the relaxation time is 2 250μs in the Ni-SiO_(2)-Si structure without bias.The LPE sensitivity has a significant improvement with bias.The transient response time is 6μs and the relaxion time is 47μs with-7 V bias,not only improving the LPE sensitivity,but also increasing the response speed with bias.The research shows that the Schottky barrier structure can improve the sensitivity and linearity of LPE with bias effectively,and thus it can be used in position sensitive sensors.展开更多
Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an exc...Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale （about 100 nm）, which was considered to be impossible for LPE method.展开更多
文摘We designed a clamping device to study lateral photovoltaic effect (LPE) in Ni-SiO_(2)-Si structure with bias due to the appropriate barrier height.The LPE has a prominent sensitivity and linearity with 532 nm wavelength laser.The transient response time is 450μs and the relaxation time is 2 250μs in the Ni-SiO_(2)-Si structure without bias.The LPE sensitivity has a significant improvement with bias.The transient response time is 6μs and the relaxion time is 47μs with-7 V bias,not only improving the LPE sensitivity,but also increasing the response speed with bias.The research shows that the Schottky barrier structure can improve the sensitivity and linearity of LPE with bias effectively,and thus it can be used in position sensitive sensors.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300801)the National Natural Science Foundation of China(Grant Nos.51702042,61734002,61571079,51572042,and 61471096)+1 种基金the International Science&Technology Cooperation Program of China(Grant No.2015DFR50870)the Sichuan Science and Technology Support Project,China(Grant Nos.2016GZ0250 and 2017JY0002)
文摘Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale （about 100 nm）, which was considered to be impossible for LPE method.
